Kabushiki Kaisha Toshiba

Yuji Iseki

Naoko Ono

Kunio Yoshihara

Yasushi Shizuki

Eiji Takagi

Keiichi Yamaguchi

Hiroshi Yamada

Tetsuhiko Mizoguchi

Takeshi Miyagi

Toshiro Sato

Michio Hasegawa

Yuji Ide

Mitsuo Konno

Kunio Matsukura

Isamu Yanase

Yoshihiko Yamaguchi

Yasunori Iwamoto

Takeshi Hanawa

Hiroyuki Kayano

Kazuhito Higuchi

Kazuhiro Inoue

Akihiro Tsujimura

Kouhei Morizuka

Yasushi Murakami

Motoyasu Morinaga

Kazuki Tateyama

Takashi Togasaki

Noriaki Odachi

Junko Akagi

Yasuo Ashizawa

Junko Onomura

Takayoshi Itoh

Shu-ichi Sekine

Yasuhiro Kuriyama

In a radio equipment of portable type, the impedance of an antenna is optimized by adjusting a matching circuit which has the adjustment function and is connected to an antenna, based on a reflection phase sent back from the antenna, outputted from a reflection phase detector, and a current supplied to a transmitter-receiver which generates a transmitting signal.

Portable type radio equipment

A high frequency semiconductor device has a semiconductor substrate such as the semi-insulating GaAs; a first metal layer disposed above the semiconductor substrate; a first dielectric thin film disposed on the first metal layer; and a second metal layer having a second metal strip disposed on the first dielectric thin film. Here, the first metal layer has a first metal strip, first and second ground metal plates sandwiching the first metal strip. And the first dielectric thin film is not disposed uniformly on the surface of the first ground metal plate so that the dielectric structure on the first metal strip differs from the dielectric structure under the second metal strip. The CPW is constituted by the first metal strip, the first and second ground metal plates, and the TFMSL is constituted by the second metal strip and the first ground metal plate. By employing the structure such that there is no dielectric thin film on the CPW portion, or that the thickness of the dielectric thin film on the CPW portion is configured to be less than the thickness of the dielectric thin film associated with the TFMSL portion, the effective dielectric constant &isin; of the CPW portion is made lower than that of the conventional CPW, which employs a uniform and homogenous dielectric structure so that the CPW portion has the same thickness of the TFMSL portion. As the result, the adjustable range of the characteristic impedance Z of the high frequency transmission line, merged in the high frequency semiconductor integrated circuit, increases. Then the high-performance integrated circuits such as MMICs having the low transmission loss, the low crosstalk can be achieved.

Microwave semiconductor device having coplanar waveguide and micro-strip line

A microwave transmitter/receiver module has a package that includes a high-frequency circuit board and an electromagnetically narrowed space. A semiconductor chip is mounted on the circuit board and is contained in the electromagnetically narrowed space. The electromagnetically narrowed space has a cutoff frequency that is higher than a carrier frequency for microwave communication. A receiver antenna pattern is formed on the top surface of the package and is electromagnetically connected to the semiconductor chip through a first slot. A transmitter antenna pattern is formed on the top surface of the package at a different position from the receiver antenna pattern and is electromagnetically connected to the semiconductor chip through a second slot. Since the antenna patterns are on the top surface of the package, the proper performance thereof is secured and the package is compact.

Microwave transmitter/receiver module

A semiconductor device includes a wiring board having a main surface and a plurality of pad electrodes formed on the main surface, a rectangular semiconductor element having a main surface facing the main surface of the wiring board and mounted on the main surface of the wiring board, a solder resist formed to surround the semiconductor element with a preset distance therefrom on the main surface of the wiring board, a plurality of terminal electrodes formed on the end portion of the main surface of the semiconductor element, and a plurality of solder bumps for electrically connecting the plurality of pad electrodes to the plurality of terminal electrodes with a gap provided between the main surface of the wiring board and the main surface of the semiconductor element, wherein each of the plurality of pad electrodes includes at least a portion which extends from substantially under a corresponding one of the plurality of terminal electrodes of the semiconductor element to the solder resist lying outside the semiconductor element and each of the plurality of solder bumps includes a portion extending over part of a corresponding one of the plurality of pads which lies outside the semiconductor element.

Semiconductor device and soldering portion inspecting method therefor

Disclosed is an ultra high frequency radio communication apparatus having: a receiver antenna; a transmitter antenna; an IC chip being electrically connected to the receiver antenna and the transmitter antenna; a substrate on which the receiver antenna, the transmitter antenna and the IC chip are mounted; an input terminal for inputting to the IC chip a base band input signal; an output terminal for outputting a base band output signal from the IC chip; and a control signal terminal for inputting a control signal for controlling the IC chip to the IC chip. The IC chip is placed in a shielding space such that the cut-off frequency of the shielding space is higher than the frequency of a carrier signal for radio communication.

Ultra high frequency radio communication apparatus

A semiconductor device wherein a sealing resin is filled in a space between an interconnecting wiring board and a semiconductor chip after the semiconductor chip is flip chip-mounted on the wiring board in which at least a non-planar region consisting of a through hole, a concave portion or a convex portion, or a region exhibiting poor wettability to the sealing resin is formed on the surface of the wiring board or the semiconductor chip so as to provide a void in the sealed resin filled between the wiring board and the semiconductor chip for the purpose of minimizing any bad influence from the sealing resin on the interconnecting wirings or elements formed on the semiconductor chip.

Semiconductor device

A wiring board for high-frequency signals, which comprises, a substrate, a dielectric layer formed on the substrate and provided on its surface with a U-shaped groove having an arcuate bottom for forming a wiring therein, and a signal wiring formed in the U-shaped groove, which is featured in that an upper end portion of the signal wiring is protruded out of the surface of the dielectric layer. A distance (H) from a protruded top surface of the signal wiring to a bottom of the U-shaped groove and a width (W) of the U-shaped groove preferably meet a relationship of 2&lt;(W/H)&lt;50, and the height of the portion of signal wiring which is protruded out of the surface of the dielectric layer is preferably in the range of 10 nm to 10 .mu.m.

Wiring board for high-frequency signals and semiconductor module for

Disclosed is a dc-to-dc converter comprising a switching transistor, a pulse-width modulation controller, a sandwich-type planar inductor, which accumulates an electromagnetic energy at ON state and releases the accumulated electromagnetic energy at OFF state of the switching transistor, a smoothing capacitor, a rectifying element, and a planar search coil for detecting an overcurrent flowing the planar coil, disposed on one of the outer surfaces of the soft magnetic layers constituting the planar inductor.

Magnetic element for power supply and DC-to-DC converter

A semiconductor device comprising a semiconductor chip, a sheet-like metal member electrically connected to a major surface of the semiconductor chip and serving as a ground electrode for the chip, and input/output electrodes electrically connected to the semiconductor chip and situated in the same plane as that of the sheet-like metal member, the chip, the metal member, and the input/output electrodes being encapsulated in an electrically insulating member having a bottom surface and adapted to be mounted on a surface of a circuit board. The sheet-like metal member is brought out from inside the electrically insulating member without being bent and has its one end face situated in substantially the same plane as the bottom surface of the electrically insulating member which faces to the surface of the circuit board when the metal member is mounted on the circuit board and the major surface of the chip is approximately prependicular to the end face of the sheet-like metal member.

Semiconductor device for ultrahigh frequency band and semiconductor

Magnetic element for power supply and dc-to-dc converter

Growing community of inventors

Yokohama, Japan

Yuji Iseki