Mitsubishi Electric Corporation

Agc Inc.

Yuji Imoto

Junji Fujino

Naoki Yoshimatsu

Mikio Ishihara

Tatsuya Kawase

Yosuke Nakata

Daisuke Murata

Osamu Usui

Yusuke Ishiyama

Shinsuke Asada

Hiroshi Yoshida

Seiji Oka

Noboru Miyamoto

Taketoshi Shikano

Hidetoshi Ishibashi

Shohei Ogawa

Kenta Nakahara

Hiroya Sannai

Hiroyuki Harada

Hajime Kato

Atsushi Maeda

Satoru Ishikawa

Yusuke Fujiwara

Taishi Sasaki

Nobuyoshi Kimoto

Arata Iizuka

Yuki Yoshioka

Seiichiro Inokuchi

Nobuhiro Asaji

Takumi Shigemoto

Masayoshi Shinkai

Kei Hayashi

Miho Nagai

The present invention relates to a chemically strengthened glass including alkali metal ions, having a thickness of 0.20 mm or smaller, and having a pair of major surfaces that are opposed to each other and have been subjected to a chemically strengthening treatment, in which at least one of the pair of major surfaces has a core roughness depth Sk of 0.90 nm or smaller and a mean summit curvature Ssc of 13.0×10/nm or smaller.

Chemically strengthened glass and manufacturing method of chemically strengthened glass

An insulating substrate () is provided on a base plate (). A semiconductor device (-) is provided on the insulating substrate (). A case () is arranged to surround the insulating substrate and the semiconductor device and bonded to the base plate () with an adhesive (). A sealant () seals the insulating substrate and the semiconductor device in the case (). A groove () is provided on a lower surface of the case () opposing an upper surface peripheral portion of the base plate (). A bottom surface of the groove () has a protruding part () protruding toward the base plate (). The protruding part () includes a vertex () and gradients () respectively provided on an inner side and on an outer side of the case () with the vertex () sandwiched therebetween. The adhesive () contacts the vertex () and is housed in the groove ().

Semiconductor module

A semiconductor device includes a semiconductor element and a lead part. The semiconductor element is mounted on a circuit pattern provided on an insulating substrate. The lead part has a plate shape and is bonded to the semiconductor element with a first bonding material interposed therebetween. The lead part includes a lead body and a bonding component. The lead body includes an opening part provided corresponding to a mounting position of the semiconductor element. The bonding component is provided in the opening part and on the semiconductor element. The bonding component is bonded at a lower surface thereof to the semiconductor element by the first bonding material and bonded at an outer peripheral part thereof to an inner periphery of the opening part by a second bonding material.

Semiconductor device and method for manufacturing semiconductor device

A semiconductor device according to the disclosure includes a first semiconductor chip, a second semiconductor chip, a first metal plate provided on an upper surface of the first semiconductor chip, a second metal plate provided on an upper surface of the second semiconductor chip and a sealing resin covering the first semiconductor chip, the second semiconductor chip, the first metal plate and the second metal plate, wherein a groove is formed in the sealing resin, the groove extending downwards from an upper surface of the sealing resin, the first metal plate includes, at an end facing the second metal plate, a first exposed portion exposed from a side face of the sealing resin forming the groove, and the second metal plate includes, at an end facing the first metal plate, a second exposed portion exposed from a side face of the sealing resin forming the groove.

Semiconductor package with a plurality of chips having a groove in the encapsulation

The object is to provide a technique that can prevent cracks from appearing in an undesirable portion in a resin. A semiconductor device includes an electronic circuit including a semiconductor element, a metal electrode directly connected to the electronic circuit, and an encapsulation resin. The encapsulation resin encapsulates the electronic circuit and the metal electrode. An end portion of the metal electrode on a surface opposite to a surface facing the electronic circuit is acute-shaped, and an end portion of the metal electrode on the surface facing the electronic circuit is arc-shaped or obtuse-shaped.

Semiconductor device and power conversion device

A base plate () includes a fixed surface and a radiating surface which is a surface opposite to the fixed surface. An insulating substrate () is bonded to the fixed surface of the base plate (). Conductive patterns () are provided on the insulating substrate (). Semiconductor chips () are bonded to the conductive pattern (). An Al wire () connects top surfaces of the semiconductor chip () to the conductive pattern (). The insulating substrate (), the conductive patterns (), the semiconductor chips (to) and the Al wires (to) are sealed with resin (). The base plate () includes a metal part () and a reinforcing member () provided in the metal part (). A Young's modulus of the reinforcing member () is higher than a Youngs modulus of the metal part ().

Semiconductor module, semiconductor device, and vehicle

The semiconductor device includes a semiconductor element substrate having an insulation property, and a wire for positioning the semiconductor element with respect to the semiconductor element substrate. The semiconductor element substrate includes a disposition region for disposing the semiconductor element. The wire is provided at least at a part of the periphery of the disposition region.

Semiconductor device, power conversion apparatus, and method for manufacturing semiconductor device

A semiconductor chip () is disposed on the insulation substrate (). A lead frame () is bonded to an upper surface of the semiconductor chip (). A sealing resin () covers the semiconductor chip (), the insulation substrate (), and the lead frame (). A stress mitigation resin () having a lower elastic modulus than that of the sealing resin () is partially applied to an end of the lead frame ().

An object is to provide a power module in which adhesion of a sealing resin is sufficient and which is highly reliable. The power module includes: an insulative board in which a pattern of a conductor layer is formed on a ceramic plate; power semiconductor elements placed on the insulative board; lead frames each in a plate shape connecting from electrodes of the power semiconductor elements to screw-fastening terminal portions; and a sealing resin portion that seals connection portions between the power semiconductor elements and the lead frames, and regions around the connection portions; wherein, in the lead frames, opening portions are formed at positions where each of the lead frames at least partly overlaps, in planar view, with a portion of the insulative board on which the conductor layer is not formed.

Power module having a hole in a lead frame for improved adhesion with a sealing resin, electric power conversion device, and method for producing power module

A semiconductor chip () is bonded to an upper surface of the conductive substrate (). A control terminal () is disposed outside the semiconductor chip () and connected to a control electrode of the semiconductor chip () via a lead (). A case () surrounds the semiconductor chip (). A sealing material () seals the semiconductor chip (). The lead frame () includes a bonded part () joined to the semiconductor chip (), and an upright part () embedded in the case (), extending from the bonded part () to an outer side of the control terminal (), and standing upright vertically relative to an upper surface of the semiconductor chip ().

Semiconductor device, inverter unit and automobile

A semiconductor device includes a semiconductor element having a front electrode, an electrode plate having an area larger than the front electrode of the semiconductor element in a two-dimensional view and made of aluminum or aluminum alloy, and a metal member having a joint surface joined to the front electrode of the semiconductor element with solder, having an area smaller than the front electrode of the semiconductor element in a two-dimensional view, made of a metal different from the electrode plate, and fastened to the electrode plate to electrically connect the front electrode of the semiconductor element to the electrode plate.

Semiconductor device

First and second electrodes () are provided on an upper surface of the semiconductor chip () and spaced apart from each other. A wiring member () includes a first joint () bonded to the first electrode () and a second joint () bonded to the second electrode (). Resin () seals the semiconductor chip (), the first and second electrodes () and the wiring member (). A hole () extending through the wiring member () up and down is provided between the first joint () and the second joint ().

Semiconductor device and manufacturing method thereof

A semiconductor device includes: an insulating substrate; an aluminum pattern made of a pure aluminum or alloy aluminum material and formed on the insulating substrate; a plating formed on a surface of the aluminum pattern; and a semiconductor element joined to the plating, wherein a thickness of the plating is 10 &#x3bc;m or more.

A plurality of semiconductor devices (--) are provided on an upper surface of the conductive base plate () via an insulating substrate () and a conductive pattern (-). A plurality of fins () are provided on a lower surface of the conductive base plate (). A heat dissipating base plate () is provided to tips of the plurality of fins (). A cooler () having an inflow port () and an outflow port () in a bottom surface surrounds the plurality of fins () and the heat dissipating base plate (). A partition () separates a space surrounded by the cooler () and the heat dissipating base plate () into an inflow-side space () connected to the inflow port () and an outflow-side space () connected to the outflow port (). A first slit () is provided in a central portion of the heat dissipating base plate (). Second and third slits () are respectively provided on both sides of the heat dissipating base plate () along a direction from an inflow side to an outflow side. One of the first slit () and the second and third slits () is an inflow-side slit connected to the inflow-side space () and the other is an outflow-side slit connected to the outflow-side space ().

Semiconductor module and electric power conversion device

The object is to provide a technology capable of enhancing a cooling performance of a semiconductor device. The semiconductor device includes a fin portion including a plurality of projecting portions that are connected to a lower surface of a heat-transfer base plate, a cooling member covering the fin portion and being connected to an inlet through which coolant to flow toward the fin portion flows in and an outlet through which coolant flowing from the fin portion flows out, and a header being a water storage chamber that is provided between the inlet and the fin portion and is partitioned from the fin portion so as to be capable of allowing coolant to flow through from the inlet to the fin portion.

Growing community of inventors

Tokyo, Japan

Yuji Imoto