Fuji Electric Co., Ltd.

Fuji Electric Device Technology Co., Ltd.

Yuji Ichimura

Yuko Nakamata

Kei Yamaguchi

Daisuke Kimijima

Katsumichi Ueyanagi

Kazunori Saito

Toshio Denta

Shigeru Shinoda

Makoto Higashidate

Kotomi Suzuki

Kouichi Haraguchi

A semiconductor device includes a semiconductor chip, a substrate having a main surface on which the semiconductor chip is arranged, a resin case which has a storage space therein and a side wall, the side wall having an injection path extending from the storage space to a device exterior, the resin case having a first opening at a bottom side thereof, connecting the storage space to the device exterior, the substrate being disposed on the resin case, at a main surface side of the substrate facing at the bottom side of the resin case, and a sealing material filling the storage space and the injection path.

Semiconductor device manufacturing method and semiconductor device

The semiconductor device includes an insulating circuit substrate mounted with a semiconductor element; an external terminal; a base including a support portion; an adhesive sheet; and a sealing portion covering the semiconductor element. The support portion has a first surface, a second surface on the side opposite to the first surface, and a first opening opened at the first surface and the second surface. The insulating circuit substrate is disposed in the first opening. The adhesive sheet is disposed on the second surface of the support portion and has a second opening in which the semiconductor element is disposed in plan view. The adhesive sheet is projected into the first opening in plan view and adhered to a circuit block. The external terminal is adhered on the adhesive sheet and has a connecting surface to which a bonding wire is connected.

Semiconductor device and method of manufacturing semiconductor device

A flat plate frame is formed, which is flat plate-shaped, which has an opening penetrating its front and rear surfaces and groove terminal patterns formed on its front surface, and which contains a semi-cured thermosetting resin. Then, an insulating substrate is disposed on the rear surface so as to cover the opening of the flat plate frame, external connection terminals are disposed on the terminal patterns, and heating is carried out. As a result, a terminal package to which the insulating substrate and external connection terminals are firmly joined is produced using the flat plate frame. The external connection terminals included in the terminal package are reliably and firmly joined to the terminal package. Therefore, the external connection terminals are not displaced when wires are bonded to the external connection terminals.

Method of manufacturing semiconductor device

A resin composition is disclosed that includes a thermosetting base resin; a curing agent; an inorganic filler; and at least one fluorine resin powder selected from polyvinylidene fluoride, polychlorotrifluoroethylene, and a tetrafluoroethylene/perfluoro(alkyl vinyl ether)/chlorotrifluoroethylene copolymer, and a semiconductor device which is fabricated by being sealed using a sealant formed of the resin composition.

Resin composition

A resin composite includes a maleimide resin powder and a resin having a glass transition point that is lower that the glass transition point of the maleimide resin. The resin having a glass transition point that is lower than that of the maleimide resin may be an epoxy resin. Then, the resin composite may be cured at the curing temperature of the epoxy resin. The maleimide resin powder is mixed in an amount ranging from 50 weight % to 80 weight % with respect to the epoxy resin.

Resin composite, semiconductor device, and method of manufacturing the semiconductor device

A resin composition has a high glass transition temperature and is highly adhesive to a member made of metal, ceramics, or the like. The resin composition includes a thermosetting base resin, a thermoplastic resin powder, a curing agent, and an inorganic filler, a cured resin product formed by curing the resin composition, and an electrical member.

Resin composition and electronic component

A silicone resin composition is provided that exhibits an increased adhesiveness relative to insulating circuit substrates and can prevent bubble production even when moisture absorption has occurred, exhibits an excellent heat resistance, and is free of problems such as cracking. A silicone resin composition for use as a sealant for a power semiconductor module includes an insulating circuit substrate having a Cu layer formed on a surface thereof. The silicone resin composition is formed on the Cu layer of the insulating circuit substrate, and has, after curing, a penetration of 35 to 70 and an adhesive strength of 50 to 180 kPa between the silicone resin composition and the insulating circuit substrate. The penetration is measured in accordance with JIS K 2220.

Silicone resin composition for sealant and power semiconductor module that uses this composition

A method of manufacturing a semiconductor device and a semiconductor device that is manufactured by the method. In the method of manufacturing a semiconductor device, a releasing sheet is disposed in close contact with a hole of an aluminum plate having the recessed hole, and a skeleton structure of a semiconductor device is put into the recessed hole. Then, liquid epoxy resin is poured into the recessed hole. After hardening, the epoxy resin bodyincluding the skeleton structure is taken out from the recessed hole to complete manufacturing the semiconductor device. Using a simple molding jig including the aluminum plate, and covering the skeleton structure with the epoxy resin body, a highly reliable semiconductor device with a case-less construction can be manufactured.

Semiconductor device and method of manufacturing the same

Provided is a method of manufacturing a semiconductor device which includes a semiconductor chip, an insulating board mounted with the semiconductor chip and having a wiring pattern, and a leadframe connected to the wiring pattern, the semiconductor chip, the wiring pattern and the leadframe being partially sealed with a sealing resin, wherein: an epoxy resin composition formed by adding 0.3 to 0.7 mass % of epoxysilane as a silane coupling agent to an epoxy resin is used as the sealing resin; and a copper member made of copper or a copper alloy and having an oxide film formed in the surface with a film thickness in a color indicated by an L* value in the range of 48 to 51, an a* value in the range of 40 to 49 and a b* value in the range of 24 to 40 is used as the leadframe and the wiring pattern.

Manufacturing and evaluation method of a semiconductor device

A power semiconductor module available under environments of high temperature has enhanced heat resistance of silicone gel filled up in a case. A power semiconductor module comprises a power semiconductor element, an insulating substrate mounted with the power semiconductor element, a resin case containing the power semiconductor element and the insulating substrate, a silicone gel injected into the resin case, and a sheet composed of a silicone rubber or silicone resin, disposed between the resin case and the silicone gel within the resin case.

Power semiconductor module

Provided is a power module. The power module includes a power semiconductor chip. The power module further includes a case that accommodates the power semiconductor chip. A silicone gel seals the power semiconductor chip within the case. The silicone gel including a heat-resistant silicone gel containing 20 to 100 mass ppm of a metal complex comprising a metal selected from a group consisting of iron and platinum.

Power module

A pressure detecting apparatus has a pressure detecting device that converts a strain caused by a stress exerted thereto to an electrical signal, and outputs the converted electrical signal. The apparatus has a housing base including a housing recess that houses the pressure detecting device therein, and a connecting material interposed between the pressure detecting device and the housing recess. The connecting material connects the pressure detecting device and the housing recess with a tensile elongation percentage of about 400% or higher. The pressure detecting apparatus facilitates preventing thermal stress from adversely affecting the detection performance thereof, and produces excellent thermal response.

Pressure detecting apparatus

A resin sealed semiconductor device includes a metallic base plate and a covering case adhered to a peripheral section of the metallic base plate. Semiconductor elements are loaded on the metallic base plate, and lead-out terminals extend from an upper surface of a terminal-supporting plate made to adhere to lead-out terminals. The terminal-supporting plate forms an upper surface of the covering case 5 which is filled with a sealing resin. Uneven stripes are molded and extend circumferentially over the entire outer peripheral surface of terminal-supporting plate to roughen the peripheral surface, and the adhesion strength is reinforced by increasing the adhesive area between the terminal-supporting plate and the sealing resin.

Growing community of inventors

Matsumoto, Japan

Yuji Ichimura