Nitto-denko Corporation

Yuji Hotta

Amane Mochizuki

Makoto Kojima

Miho Yamaguchi

Akiko Matsumura

Naoki Sadayori

Ichiro Suehiro

Noriaki Harada

Shinichi Ohizumi

Sadahito Misumi

Fumiteru Asai

Masahiro Yoshioka

Michie Sakamoto

Kazuki Uwada

Hitomi Shigyo

Ichirou Suehiro

Seiji Kondoh

Toshitaka Nakamura

Seiji Kondo

Noriyuki Juni

Yutaka Moroishi

Kazumi Higashi

Takashi Tominaga

Fumiko Nakano

Kazuki Uawada

The present invention provides an organic electroluminescence device including an organic layer comprising an emissive layer; a pair of electrodes comprising an anode and a cathode, and sandwiching the organic layer, wherein at least one of the electrodes is transparent; a transparent layer provided adjacent to a light extracting surface of the transparent electrode; and a region substantially disturbing reflection and retraction angle of light provided adjacent to a light extracting surface of the transparent layer or in an interior of the transparent layer, wherein the transparent layer has a refractive index substantially equal to or more than the refractive index of the emissive layer.

Electroluminescence device, planar light source and display using the same

The present invention provides a light pipe for a direct-type backlight having an upper surface and a lower surface, which has: a light reflecting member provided on the upper surface; and plural light scattering members formed concentrically on at least one surface selected from the upper surface and the lower surface, wherein each of the plural light scattering members is a circular groove or a circular projection, wherein each area between respective light scattering members is substantially the same.

Light pipe for direct-type backlight and direct-type backlight

A process for semiconductor device production by which the reliability of connection with bumps can be easily heightened with higher certainty. The process for producing a semiconductor device comprising a substrate having bumps formed thereon, comprises covering the bumps with an adhesive film which has a modulus of elasticity (&#x2212;55&#xb0; C.) of from 100 MPa to 5 GPa and has a thickness corresponding to from 5 to 40% of the height of the bumps, and then disposing the adhesive film on the substrate so that the bumps pierce through the adhesive film and come to protrude therefrom.

Process for producing semiconductor device

The present invention provides A direct-type backlight having: a resin sealing member including at least one resin layer, which has a light reflecting section formed on the outermost surface of the resin sealing member; an optical semiconductor element sealed by the resin sealing member; and plural circular light scattering grooves formed concentrically on at least one surface of the resin layer, wherein an area of a circle in the center and an area among the respective concentric circles are substantially the same.

Direct-type backlight

An anisotropic conductive film is prepared by winding an insulated wire around a core member to form one roll of a winding layer, placing an insulating resin film on the obtained winding layer, and repeating the step of winding the insulated wire and the step of placing the insulating resin film to give a laminate alternately having the winding layer comprising a single row of insulated wires and an insulating resin layer made from the insulating resin film. A coating layer and insulating resin layer are melted to integrate the winding layer and the insulating resin layer. The laminate then is sliced along a plane forming an angle with the insulated wire in a desired film thickness.

Method of manufacturing an anisotropic conductive film

The invention provides a sheet for optical-semiconductor element encapsulation, which has a multilayer structure including at least two resin layers. The at least two resin layers include: (A) an outermost resin layer (layer A) that is to be brought into contact with one or more optical semiconductor elements; and (B) a resin layer (layer B) disposed on the layer A and having a lower refractive index than that of the layer A. Also disclosed is a process for producing an optical semiconductor device using the sheet.

Sheet for optical-semiconductor element encapsulation and process for producing optical semiconductor device using the sheet

The invention provides a process for producing a light-emitting semiconductor device, which comprises: (1) forming a polycarbodiimide-containing layer on a light takeout side of a light-emitting semiconductor element; and (2) forming irregularities on the surface of the polycarbodiimide-containing layer.

Process for producing light-emitting semiconductor device

A porous adhesive sheethaving plural through holesrunning in about parallel with each other in the thickness direction A of an adhesive organic film, wherein the through holes have about congruent sections in the diameter direction from one openingto the other openingand a production method thereof, and a semiconductor wafer with a porous adhesive sheet, which includes a semiconductor waferhaving an electrode, the porous adhesive sheetadhered to the semiconductor wafer, and a conductive partformed by filling a through holelocated on the electrodewith a conductive material, and a production method thereof are provided.

Porous adhesive sheet, semiconductor wafer with porous adhesive sheet and method of manufacture thereof

A polycarbodiimide copolymer which comprises at least one structural unit selected from rubber residues represented by the following formulae (1) and (2) in a number 'm':and a structural unit represented by the following formula (3) in a number 'n':and which comprises on both termini a terminal structural unit derived from a monoisocyanate, wherein m is an integer of 2 or more, n is an integer of 1 or more, m+n is from 3 to 1,500 and m/(m+n) is from 1/1,500 to &#x2153;. The polycarbodiimide is capable of keeping the inherent heat resistance and also showing excellent flexibility. Films and molding materials having high heat resistance and flexibility can be obtained.

Polycarbodiimide copolymer and production method thereof

An adhesive film for underfill excellent in relaxation effect of the stress generated in the above semiconductor element and the wiring circuit board and in the connecting electrode parts and also excellent in reliability of electrical connection between the semiconductor element and the wiring circuit board.

Adhesive film for underfill and semiconductor device using the same

The present invention provides an optical semiconductor device comprising: a wiring circuit board; at least one optical semiconductor element mounted on the wiring circuit board; resin layer A that encapsulates the at least one optical semiconductor element therewith; and resin layer B interposed between the resin layer A and the wiring circuit board, and having a tensile modulus as measured at 30&#xb0; C. of 0.001 to 0.4 GPa.

Optical semiconductor device

A microlens array having a resin layer forming convex lenses, wherein the resin layer comprises a cured product of a polycarbodiimide resin represented by formula:wherein R represents a diisocyanate residue; Rrepresents a monoisocyanate residue; and n represents an integer of 1 to 100.

Microlens array

Porous adhesive sheet, semiconductor wafer with porous adhesive sheet, and method of manufacture thereof

An adhesive film for underfill which relaxes the stress formed in the wiring circuit substrate, semiconductor element and electrode parts for connection. The adhesive film is a quickly hardening type, and forms a highly heat resistant sealing resin layer quickly between the wiring circuit substrate and semiconductor element of a semiconductor device.

An anisotropic conductive film comprising an insulating film and plural conductive paths ( ), wherein the plural conductive paths are insulated from each other and penetrate the insulating film in the thickness direction of the film, with both ends of the paths being exposed on both surfaces of the insulating film, and wherein a conductive path capable of contact with an electrode of a semiconductor element and a circuit of a circuit board has at least one end protruding more than an end on the same side of a conductive path incapable of contact with the electrode and the circuit. The ACF of the present invention can prevent a conductive path not involved in electrical connection from being in contact with a part other than an electrode of a semiconductor element and/or a part other than a circuit of a circuit board.

Growing community of inventors

Ibaraki, Japan

Yuji Hotta