Ngk Insulators, Inc.

Commissariat a L'energie Atomique

Ngk Ceramic Device Co., Ltd.

Yuji Hori

Tomoyoshi Tai

Takahiro Yamadera

Mitsuhiro Tanaka

Osamu Oda

Tomohiko Shibata

Tatsuro Takagaki

Ryosuke Hattori

Yasunori Iwasaki

Kengo Suzuki

Takashi Yoshino

Masahiko Namerikawa

Keiichiro Asai

Akiyoshi Ide

Sugio Miyazawa

Masashi Goto

Bruno Daudin

Hiroki Kobayashi

Akira Hamajima

Mitsuo Ikejiri

Eva Monroy

Jungo Kondo

Kenji Aoki

Osamu Mitomi

Toshinao Nakahara

Saki Nakayama

Takanori Sakurai

Edith Bellet-Amalric

A composite substrate for an acoustic wave device includes a piezoelectric material layer, supporting substrate and x layers (x represents an integer of 3 or larger) of intermediate layers between the piezoelectric material layer and supporting substrate. The piezoelectric material layer, supporting substrate and intermediate layers satisfy a formula (1) (R<R), the formula (2) (V<V) is satisfied when x is an even number. A formula (3) (V>V) is satisfied when x is an odd number.

Composite substrate for acoustic wave device

A composite substrate includes a supporting substrate composed of quartz, a piezoelectric material substrate, a first amorphous layer present between the supporting substrate and piezoelectric material substrate, and a second amorphous layer present between the supporting substrate and first amorphous layer. The first amorphous layer contains 10 to 30 atom % of silicon atoms, and the second amorphous layer contains 1 to 10 atom % of fluorine atoms.

Composite substrate, elastic wave element, and production method for composite substrate

A bonded body includes a supporting substrate, a silicon oxide layer provided on the supporting substrate, and a piezoelectric material substrate provided on the silicon oxide layer and composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate. The surface resistivity of the piezoelectric material substrate on the side of the silicon oxide layer is 1.7×10Ω/□ or higher.

Assembly of piezoelectric material substrate and supporting substrate

A composite substrate includes a supporting substrate composed of quartz, a piezoelectric material substrate composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate; and an interface layer along a bonding interface between the supporting substrate and the piezoelectric material substrate. The interface layer has amorphous structure and contains constituent components including silicon, oxygen and at least one of tantalum and niobium. The interface layer has concentrations of hydrogen atoms, nitrogen atoms and fluorine atoms of 1×10atoms/cmor higher and 5×10atoms/cmor lower, respectively.

A silicon film is provided on a supporting substrate composed of silicon by physical vapor deposition. The silicon film is subjected to heat treatment at a temperature of 400° C. or higher and 600° C. or lower to generate an intermediate layer. The piezoelectric material substrate is bonded to the supporting substrate through a bonding layer of silicon oxide and the intermediate layer. A method of providing an acoustic wave element with a bonded body is also provided.

Method of producing a bonded body of piezoelectric material substrate

Assembly of piezoelectric material substrate and supporting substrate, and method for manufacturing same

A bonded body includes a supporting substrate; a piezoelectric material substrate composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate; and a bonding layer bonding the supporting substrate and the piezoelectric material substrate and contacting a main surface of the piezoelectric material substrate. It is provided that at least one of a bonding surface of the supporting substrate and a bonding surface of the piezoelectric material substrate is measured by X-ray reflectivity method and that 1 is assigned to a signal intensity in the case of total reflection. A relative intensity I of a reflected light from the bonding surface is approximated by the following formula (1) in a range of 1.0&#xd7;10or larger and 1.0&#xd7;10or smaller.(2&#x3b8;)&#x2003;&#x2003;(1)(&#x3b8; represents an incident angle of an X-ray with respect to the bonding surface, a is 1.0&#xd7;10or larger and 2.0&#xd7;10or smaller, and b is 5.0 or larger and 9.0 or smaller.)

Bonded body of piezoelectric material substrate and supporting substrate

A bonded body includes a supporting substrate; a piezoelectric material substrate composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate; and a bonding layer bonding the supporting substrate and piezoelectric material substrate and contacting a main surface of the piezoelectric material substrate. At least one of a bonding surface of the supporting substrate and a bonding surface of the piezoelectric material substrate, as measured by spectral ellipsometry with &#x394; being assigned to a difference of phases of p-polarized light and s-polarized light of a reflected light, has a difference of the maximum and minimum values of the difference &#x394; of the phases in a wavelength range of 400 nm to 760 nm of 70&#xb0; or lower.

A bonded body includes a supporting substrate, silicon oxide layer provided on the supporting substrate, and a piezoelectric material substrate provided on the silicon oxide layer and composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalite. A nitrogen concentration at an interface between the piezoelectric material substrate and silicon oxide layer is higher than a nitrogen concentration at an interface between the silicon oxide layer and the supporting substrate.

Assembly of piezoelectric material substrate and support substrate, and method for manufacturing said assembly

A bonded body includes a supporting substrate, a silicon oxide layer provided on the supporting substrate, and a piezoelectric material substrate provided on the silicon oxide layer and composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate. An average value of a nitrogen concentration of the silicon oxide layer is higher than a nitrogen concentration at an interface between the silicon oxide layer and supporting substrate and higher than a nitrogen concentration at an interface between the silicon oxide layer and piezoelectric material substrate.

A bonded body includes a supporting substrate, a piezoelectric material substrate of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate, and a bonding layer bonding the supporting substrate and piezoelectric material substrate. A material of the bonding layer is silicon oxide. Provided that the bonding layer is divided into a piezoelectric material substrate-side bonding part and a supporting substrate-side bonding part, the piezoelectric material substrate-side bonding part has a nitrogen concentration higher than a nitrogen concentration of the supporting substrate-side bonding part.

Joined body of piezoelectric material substrate and support substrate, and acoustic wave element

A piezoelectric monocrystalline substrate is composed of a material represented by LiAO(A represents at least one element selected from the group consisting of niobium and tantalum), a bonding layer is compose of a material of an oxide of at least one element selected from the group consisting of niobium and tantalum, and an interface layer is provided along an interface between the piezoelectric monocrystalline substrate 6 and bonding layer, and the interface layer has a composition of EO(E represents at least one element selected from the group consisting of niobium and tantalum and 0.29&#x2264;x&#x2264;0.89).

Bonded body with piezoelectric monocrystalline substrate and supporting substrate

Described herein is a method of bonding a piezoelectric substrate to a support substrate to form a composite substrate. The piezoelectric substrate has one surface which is positively polarized, and a second surface which is negatively polarized. The method described herein includes the steps of bonding the positively polarized surface of the piezoelectric substrate to one surface of the support substrate by a direct bonding method.

Method of producing a composite substrate

A bonded body includes a supporting substrate; a piezoelectric material substrate composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate; and a bonding layer bonding the supporting substrate and the piezoelectric material substrate and contacting a main surface of the piezoelectric material substrate. The bonding layer includes a void extending from the piezoelectric material substrate to the supporting substrate.

Joined body of piezoelectric material substrate and support substrate

A bonded body includes a supporting substrate; a piezoelectric material substrate composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate; and a bonding layer bonding the supporting substrate and the piezoelectric material substrate and contacting a main surface of the piezoelectric material substrate. The bonding layer includes a void extending from the piezoelectric material substrate toward the supporting substrate. A ratio (t/t) of a width tat an end of the void on a side of the supporting substrate with respect to a width tat an end of the void on a side of the piezoelectric material substrate is 0.8 or lower.

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Owariasahi, Japan

Yuji Hori