Toshiba Memory Corporation

Kioxia Corporation

Yuji Hashimoto

Shinsuke Muraki

Hiroaki Yamada

Katsuhiro Sato

Satoshi Nakaoka

Yoshihiro Ogawa

Hideaki Hirabayashi

Takahiro Terada

Hiroshi Fujita

Hiroaki Ashidate

Yoshinori Kitamura

Masaaki Hirakawa

Kaori Deura

Yukako Murakami

According to one embodiment, a semiconductor manufacturing device includes a chemical solution preparation tank configured to prepare a solution; a chamber configured to discharge the chemical solution prepared at the chemical solution preparation tank to a substrate; a pressure sensor configured to measure a pressure inside the chemical solution preparation tank; and a variable opening valve arranged between the chemical solution preparation tank and an exhaust pipe.

Semiconductor manufacturing device

A substrate treatment apparatus according to an embodiment includes: a tank configured to store a liquid chemical with which a plurality of substrates are treated; a piping having an ejection port that ejects the liquid chemical or bubbles into the tank; a plurality of rods that support the plurality of substrates in the tank; and a converter that is provided in the plurality of rods or the tank and that converts vibration applied to each substrate by the liquid chemical or the bubbles ejected from the piping into rotation in one direction around a center of the substrate as a rotational axis.

Substrate treatment apparatus and manufacturing method of semiconductor device

A substrate treatment apparatus according to an embodiment includes a treatment tank, a container, a measuring instrument, and a controller. The treatment tank stores a chemical solution to treat a substrate. The container contains a liquid including ammonia from which a gas discharged from the treatment tank is gas-liquid separated. The measuring instrument measures an amount of the ammonia included in the liquid over time. The controller controls the treatment of the substrate based on the amount of the ammonia.

Substrate treatment apparatus

In one embodiment, a semiconductor manufacturing apparatus includes a liquid supplier configured to supply liquid to a film on a substrate and cause a substance to dissolve from the film in the liquid. The apparatus further includes a first channel configured to recover the liquid supplied to the film and feed the liquid again to the liquid supplier, and a second channel configured to drain the liquid supplied to the film. The apparatus further includes a first switching module configured to switch a discharge destination of the liquid supplied to the film between the first and second channels, and a second switching module configured to switch between supplementing and not supplementing the first channel with new liquid. The apparatus further includes a controller configured to control the first and second switching modules to adjust concentration of the substance in the liquid to be supplied to the film.

Semiconductor manufacturing apparatus and method of manufacturing semiconductor device

A substrate treatment apparatus according to an embodiment includes a treatment part, a cyclic path, a heater, and a first injector. The treatment part is supplied with an etchant containing phosphoric acid and a silica deposition suppressor, and brings a substrate having a silicon nitride film on a surface thereof into contact with the etchant to remove the silicon nitride film from the substrate. The cyclic path circulates the etchant in the treatment part. The heater heats the etchant. The first injector is provided on the cyclic path, and injects the silica deposition suppressor into the etchant.

Substrate treatment apparatus, substrate treatment method, and etchant

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Kuwana, Japan

Yuji Hashimoto