Shin-etsu Chemical Co., Ltd.

Central Glass Company, Limited

Matsushita Electric Industrial Co., Ltd.

Other

Panasonic Corporation

Shin-etsu Chemical C O., Ltd.

Yuji Harada

Jun Hatakeyama

Yoshio Kawai

Masaru Sasago

Masayuki Endo

Kazuhiko Maeda

Shinji Kishimura

Michitaka Ootani

Haruhiko Komoriya

Koji Hasegawa

Takeru Watanabe

Jun Watanabe

Satoru Miyazawa

Shiori Nonaka

Kentaro Tsutsumi

Yuki Suka

Tomohiro Kobayashi

Takeshi Kinsho

Kazunori Maeda

Osamu Watanabe

Kazuhiro Yamanaka

Takeshi Sasami

Takao Yoshihara

Satoshi Shinachi

Yuuki Suka

Mutsuo Nakashima

Wataru Kusaki

Tsutomu Ogihara

Yusuke Biyajima

Masahiko Niwayama

Takayoshi Nakahara

Kazuyuki Sawada

Ryo Mitsui

Taku Morisawa

Motoaki Iwabuchi

Masayoshi Sagehashi

Daisuke Kori

Tatsushi Kaneko

Keita Takahashi

Saichirou Kaneko

Yoshimi Shimizu

Yoshiya Moriyama

Kazuomi Sato

Tomohiro Kobatashi

Masaaki Okita

Takehiko Ishii

Matsuo Nakashima

Mamoru Watabe

Biyajima Yusuke

The present invention is a material for forming an adhesive film formed between a silicon-containing middle layer film and a resist upper layer film, the material for forming an adhesive film containing: (A) a resin having a structural unit shown by the following general formula (1); (B) a crosslinking agent containing one or more compounds shown by the following general formula (2); (C) a photo-acid generator; and (D) an organic solvent. This provides: a material for forming an adhesive film in a fine patterning process by a multilayer resist method in a semiconductor device manufacturing process, where the material gives an adhesive film that has high adhesiveness to a resist upper layer film, has an effect of suppressing fine pattern collapse, and that also makes it possible to form an excellent pattern profile; a patterning process using the material; and a method for forming the adhesive film.

Material for forming adhesive film, method for forming adhesive film using the same, and patterning process using material for forming adhesive film

A material for forming an adhesive film used for an adhesive film formed directly under a resist upper layer film, contains: (A) a resin having at least one structural unit containing a fluorine-substituted organic sulfonyl anion structure and having at least one structural unit shown by the following general formula (2) besides the structural unit containing the fluorine-substituted organic sulfonyl anion structure; (B) a thermal acid generator; and (C) an organic solvent. The material forms an adhesive film in a fine patterning process by a multilayer resist method in a semiconductor device manufacturing process, where the material gives an adhesive film that has high adhesiveness to a resist upper layer film, has an effect of suppressing fine pattern collapse, and also makes it possible to form an excellent pattern profile. A patterning process uses the material. A method forms the adhesive film.

Material for forming adhesive film, patterning process, and method for forming adhesive film

A resist underlayer film material contains: one or more compounds shown by the following general formula (1); and an organic solvent. W represents an organic group with a valency of 'n' having 2 to 50 carbon atoms; X represents a terminal group structure shown by the following general formula (2) or (3); when a ratio of the structure of the following general formula (2) to that of (3) is “a” to “b”, “a” and “b” satisfy the relations 0.70≤a≤0.99 and 0.01≤b≤0.30. “n” represents an integer of 1 to 10. Z represents an aromatic group with a valency of (k+1) having 6 to 20 carbon atoms. “A” represents a single bond or —O—(CH)—. “k” represents an integer of 1 to 5. “p” represents an integer of 1 to 10. L represents a single bond or —(CH)—. “1” represents 2 or 3; and “r” represents an integer of 1 to 5.

Resist underlayer film material, patterning process, and method for forming resist underlayer film

This is to provide a stretchable film having excellent stretchability and strength and excellent water repellency on the surface of the film, a method for forming the same, a urethane resin used for the stretchable film and a silicon-containing compound as a material of the urethane resin. A silicon-containing compound represented by the following general formula (1), 

Silicon-containing compound, urethane resin, stretchable film and method for forming the same

A method simply produces a narrowly distributed and high-purity polyalkylene glycol derivative having an amino group at an end without using a heavy metal catalyst. A method for producing a polyalkylene glycol derivative having an amino group at the end by reacting a compound represented by the general formula (V) with an alkylene oxide, then reacting a reaction product with an electrophile represented by the general formula (I), and deprotecting the obtained product without using a heavy metal:RO(RO)ROM&#x2003;&#x2003;(V) 

Method for producing polyalkylene glycol derivative having amino group at end

The present invention is a method for purifying an NCA, including the steps of: a) dissolving an NCA contaminated with impurities into a solvent which is a good solvent and is not a chlorinated solvent followed by stirring to precipitate an undissolved impurity to afford a suspension, b) adding an acidic filter aid having ability to trap a basic impurity to the obtained suspension followed by filtration and/or forming a fixed bed of the acidic filter aid having ability to trap a basic impurity followed by filtering the suspension to bring the suspension to be in contact with the acidic filter aid having ability to trap a basic impurity, and c) adding the obtained filtrate dropwise to a poor solvent for NCA to crystallize out the NCA in which the impurities are removed. This makes it possible to purify a low-purity NCA conveniently to afford a high-purity NCA.

Method for purifying an amino acid-n-carboxy anhydride

A polyalkylene glycol derivative with a minimal impurity content is prepared simply by the steps of reacting a compound having formula (III-I) or (III-II) with an electrophile having formula (IV) in the presence of an optional basic compound, to form a reaction solution containing a compound having formula (V), and passing the reaction solution through a column of cation and anion exchange resins to remove water-soluble impurities, for thereby purifying the desired polyalkylene glycol derivative.R&#x2014;R&#x2014;OR&#x2014;OR&#x2014;OM&#x2003;&#x2003;(III-I)R&#x2014;R&#x2014;OR&#x2014;OR&#x2014;OH&#x2003;&#x2003;(III-II)R&#x2014;R&#x2014;X&#x2003;&#x2003;(IV)R&#x2014;R&#x2014;OR&#x2014;OR&#x2014;R&#x2003;&#x2003;(V)

Methods of preparing and purifying polyalkylene glycol derivative

The present invention provides a silicon-containing compound shown by the following formula (1): wherein R, R, R, R, R, and Reach independently represent a linear, branched, or cyclic alkyl group having 1 to 6 carbon atoms, a phenyl group, a 3,3,3-trifluoropropyl group, or a group shown by &#x2014;(OSiRR)&#x2014;OSiRRR; R, R, R, R, and Rhave the same meanings as Rto R; X represents a linear or branched alkylene group having 3 to 7 carbon atoms optionally having an ether group; and 'n' is an integer in the range of 0 to 100. This provides a stretchable film that has excellent stretchability and strength, with the film surface having excellent repellency, and a method for forming the same; as well as a urethane resin used for the stretchable film; and a silicon-containing compound to be a material of the urethane resin.

Silicon-containing compound, urethane resin, stretchable film, and method for forming the same

The present invention provides a silicon-containing compound shown by the following formula (1): wherein R, R, R, R, R, and Reach independently represent a linear, branched, or cyclic alkyl group having 1 to 6 carbon atoms, a phenyl group, a 3,3,3-trifluoropropyl group, or a group shown by &#x2014;(OSiRR)&#x2014;OSiRRR; R, R, R, R, and Rhave the same meanings as Rto R; 'n' is an integer in the range of 0 to 100; and 'A' represents a linear or branched alkylene group having 1 to 6 carbon atoms. This provides a stretchable film that has excellent stretchability and strength, with the film surface having excellent repellency, and a method for forming the same; as well as a urethane resin used for the stretchable film; and a silicon-containing compound to be a material of the urethane resin.

A method for producing a narrowly distributed and high-purity polyalkylene glycol derivative having an amino group at an end, a polymerization initiator for use in the method, and a precursor of the polymerization initiator are provided. The present invention provides: a method for producing a polyalkylene glycol derivative having an amino group at an end, using, as a polymerization initiator, a compound represented by the general formula (I); a compound represented by the following general formula (I); and a precursor thereof: 

Method for producing polyalkylene glycol derivative having amino group at end, polymerization initiator for use in the same, and alcohol compound as raw material for the polymerization initiator

A method for producing a narrow molecular weight distribution polyalkylene glycol derivative having an amino group at an end is provided and allows for polymerization of ethylene oxide under mild conditions with suppressed occurrence of diol polymer impurities includes at least the steps of polymerizing ethylene oxide by using a compound represented by the following general formula (2) and converting a polymer end to R: 

Method for producing polyalkylene glycol derivative with narrow molecular weight distribution, and acetal group-containing alcohol compound for use therein and alkali metal salt thereof

A fluorinated ester monomer is provided having formula (1) wherein Ris H, CHor CF, Rand Rare H or a monovalent hydrocarbon group, or Rand Rforms a hydrocarbon ring, Ris a monovalent hydrocarbon group, and k is 0 or 1. A polymer obtained from the monomer has transparency to radiation with a wavelength of up to 200 nm and appropriate alkaline hydrolysis, is constructed such that any of water repellency, water slip and surface segregation may be adjusted by a choice of its structure, and is useful in forming ArF immersion lithography materials. 

Fluorinated ester monomer, making method, fluorinated ester polymer, and difluorohydroxycarboxylic acid

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Joetsu, Japan

Yuji Harada