Toyota Motor Engineering & Manufacturing North America, Inc.

North America, Inc.

Yuji Fukuoka

Ercan Mehment Dede

Shailesh N Joshi

Feng Zhou

Kyosuke N Miyagi

An electronics assembly includes a semiconductor device having a first device surface and at least one device conductive layer disposed directly thereon. A cooling structure coupled to the semiconductor device includes a manifold layer, a microchannel layer bonded to the manifold layer, at least one planar side cooling structure, and one or more cooling structure conductive layers. The manifold layer includes a fluid inlet and a fluid outlet and defines a first cooling structure surface. The microchannel layer comprises at least one microchannel fluidly coupled to the fluid inlet and the fluid outlet and defines a second cooling structure surface opposite from the first cooling structure surface. The planar side cooling structure surface is transverse to the first and the second cooling structure surfaces. The cooling structure conductive layers are disposed directly on the first cooling structure surface, the second cooling structure surface, and the planar side cooling structure surface.

Electronics assemblies and cooling structures having metalized exterior surface

An electronics assembly comprises a semiconductor device having a first device surface and at least one device conductive layer disposed on the first device surface. A cooling structure is coupled to the semiconductor device. The cooling structure comprises a first cooling structure surface and a second cooling structure surface. The second cooling structure surface is opposite from the first cooling structure surface and the first cooling structure surface is coupled to the semiconductor device. One side cooling structure surface is transverse to the respective first and second cooling structure surface. The one side electrode is disposed on the at least one side cooling structure surface in which the at least one side electrode is electrically coupled to the at least one device conductive layer. The cooling structure includes a fluid inlet for receiving a cooling fluid and a fluid outlet for removing the cooling fluid from the cooling structure.

An electronics assembly includes a cooling chip structure having a target layer and a jet impingement layer coupled to the target layer. The jet impingement layer has one or more jet channels disposed within the jet impingement layer. Further, one or more through substrate vias are disposed within the jet impingement layer, where the one or more through substrate vias are electrically conductive and are electrically coupled to the target layer. A fluid inlet port and a fluid outlet port are fluidly coupled to the one or more jet channels of the jet impingement layer.

Electronic assemblies having a cooling chip layer with impingement channels and through substrate vias

A power electronics assembly includes a semiconductor device stack having a wide bandgap semiconductor device, a semiconductor cooling chip thermally coupled to the wide bandgap semiconductor device, and a first electrode electrically coupled to the wide bandgap semiconductor device and positioned between the wide bandgap semiconductor device and the semiconductor cooling chip. The semiconductor cooling chip is positioned between a substrate layer and the wide bandgap semiconductor device. The substrate layer includes a substrate inlet port and a substrate outlet port. An integrated fluid channel system extends between the substrate inlet port and the substrate outlet port and includes a substrate fluid inlet channel extending from the substrate inlet port into the substrate layer, a substrate fluid outlet channel extending from the substrate outlet port into the substrate layer, and one or more cooling chip fluid channels extending into the semiconductor cooling chip.

Power electronics assemblies having a semiconductor cooling chip and an integrated fluid channel system

An electronics assembly includes a cooling chip structure having a device facing surface opposite a base surface and one or more sidewalls extending around a perimeter of the cooling chip structure between the device facing surface and the base surface. A plurality of fluid microchannels fluidly are coupled to a fluid inlet port and a fluid outlet port. A through substrate via extends from the base surface of the cooling chip structure to the device facing surface of the cooling chip structure, where the through substrate via intersects two or more fluid microchannels of the plurality of fluid microchannels.

Electronic assemblies having a cooling chip layer with fluid channels and through substrate vias

A power electronics assembly having a semiconductor device that includes a first device surface opposite a second device surface, a semiconductor substrate layer that extends from the first device surface to a substrate-drift interface, a semiconductor drift layer that extends from the substrate-drift interface towards the second device surface, and a semiconductor fluid channel is positioned within the semiconductor substrate layer of the semiconductor device. Further, the semiconductor fluid channel includes an inner surface. Moreover, a fluid channel metallization layer is positioned along the inner surface of the semiconductor fluid channel.

Power electronics assemblies having a semiconductor device with metallized embedded cooling channels

A power electronics assembly having a semiconductor device stack having a wide bandgap semiconductor device, a first electrode electrically coupled the wide bandgap semiconductor device, and a second electrode electrically coupled the wide bandgap semiconductor device. A substrate layer is coupled to the semiconductor device stack such that the first electrode is positioned between the substrate layer and the wide bandgap semiconductor device. The substrate layer includes a substrate inlet port and a substrate outlet port. An integrated fluid channel system extends between the substrate inlet and outlet ports and includes a substrate fluid inlet channel extending from the substrate inlet port into the substrate layer, a substrate fluid outlet channel extending from the substrate outlet port into the substrate layer, and one or more semiconductor fluid channels extending into the wide bandgap semiconductor device in fluid communication with the substrate fluid inlet and outlet channels.

Growing community of inventors

Northville, MI, United States of America

Yuji Fukuoka