Fujitsu Corporation

501 Fujitsu Limited

National Institute of Advanced Industrial Science and Technology

Fujitsu Semiconductor Limited

Meijo University Educational Foundation

Yuji Awano

Masataka Mizukoshi

Shintaro Sato

Mizuhisa Nihei

Akio Kawabata

Noriyoshi Shimizu

Daiyu Kondo

Shozo Fujita

Masahiro Horibe

Taisuke Iwai

Kazuhiko Matsumoto

Yoshitaka Yamaguchi

Masahiko Takikawa

Kenji Arinaga

Kazukiyo Joshin

Yasutake Hirachi

Tomoji Nakamura

Kohki Hikosaka

Takahiro Maruyama

Shigeya Naritsuka

A deposition method of fine particles, includes the steps of irradiating a fine particle beam formed by size-classified fine particles to an irradiated subject under a vacuum state, and depositing the fine particles on a bottom part of a groove structure formed at the irradiated subject.

Forming method and forming apparatus of carbon nanotubes

Manufacturing method of semiconductor device

A method of manufacturing carbon cylindrical structures, as represented by carbon nanotubes, by growing them on a substrate using a chemical vapor deposition (CVD) method, comprising the steps of implanting metal ions to the substrate surface and then growing the carbon cylindrical structures using the metal ions as a catalyst. A method of manufacturing carbon nanotubes comprising a step of using nano-carbon material as seed material for growing carbon nanotubes is also disclosed. A biopolymer detection device comprising vibration inducing part for inducing vibration, binding part capable of resonating with the vibration induced by the vibration inducing part and capable of binding or interacting with a target biopolymer, and detection part for detecting whether or not the binding part have bound or interacted with the target biopolymer, is also disclosed.

Method of manufacturing carbon cylindrical structures and biopolymer detection device

A CNT bundle is formed by growing a plurality of CNTs from opposing surfaces of contact blocks toward mutual opposing surfaces, and by contacting the CNTs so that they intersect to electrically connect with each other. Subsequently, a gap of the electrically connected CNT bundle is filled with a metal material, to thereby form a wiring being a composite state of the CNT bundle and the metal material.

Wiring structure and method of forming the same

A semiconductor package is disclosed that includes a semiconductor device; a circuit board; and a connection mechanism including a first conductive terminal provided on the semiconductor device, and a second conductive terminal provided on the circuit board side, the connection mechanism electrically connecting the semiconductor device and the circuit board via the first conductive terminal and the second conductive terminal. At least one of the first conductive terminal and the second conductive terminal of the connection mechanism includes one or more carbon nanotubes each having one end thereof fixed to the surface of the at least one of the first conductive terminal and the second conductive terminal, and extending in a direction away from the surface. The first conductive terminal and the second conductive terminal engage each other through the carbon nanotubes.

Semiconductor package and method of manufacturing the same

Carbon atoms are fed to a catalytic metal particlehaving a atomic arrangement of triangular lattices in a round (or partly round) of a side wall, and a graphen sheethaving a six-membered structure reflecting the atomic arrangement of the triangular lattices is consecutively formed by the metal catalyst, whereby a tubular structure of the carbon atoms is formed. Thus, the chirality of the tubular structure can be controlled by the growth direction of the graphen sheet with respect to the direction of the triangular lattices, and the diameter of the tubular structure can be controlled by the size of the catalytic metal particle.

Method of manufacturing carbon nanotube

An integrated circuit device having vias having good resistance to migration causing the breaking of a wiring line, or an integrated circuit device having a wiring structure that is fined by breaking the limit of lithography technique is provided. The former device comprises a plurality of elements fabricated on a semiconductor substrate, wiring lines for making the elements and the integrated circuit device function, and vias for interconnecting wiring lines in separate layers, the via being formed of one or more cylindrical structures made up of carbon atoms. The latter device comprises a plurality of elements fabricated on a semiconductor substrate and wiring members for making the elements and the integrated circuit device function, at least part of the wiring members being formed of one or more cylindrical structures made up of carbon atoms. The latter device is preferably manufactured by a method comprising using a CVD process for the formation of the cylindrical structures, while applying a direct current electric field so as to grow the cylindrical structures in one direction, or applying an alternating current electric field so as to grow the cylindrical structures in two directions. A semiconductor device using a carbon nanotube and a method of forming a pattern using a carbon nanotube as a mask are also disclosed.

Integrated circuit device and method of producing the same

Disclosed is a semiconductor device including a SiC substrate and a heat conductor formed in a hole in the SiC substrate and made of a linear structure of carbon elements.

Semiconductor device and manufacturing method thereof

A field effect transistor according to the present invention includes a carbon nanotube of two or more walls having an inner wall and an outer wall, source and drain electrodes formed on both sides of the carbon nanotube, and a gate electrode formed in a gate formation region of the carbon nanotube, wherein the outer wall of the carbon nanotube is removed in the gate formation region to expose the inner wall, an insulation film is formed on the exposed inner wall, the gate electrode is formed on the exposed inner wall via the insulation film or via a Schottky junction, the source and drain electrodes are formed in contact with the outer wall and inner wall, and the carbon nanotube between the source and drain electrodes and the insulation film is covered by the outer wall.

Field effect transistor using carbon nanotube of two or more walls having the outer walls at the gate and source/drain regions removed

The electron device of the present invention has a carbon-based linear structural body including at least one conductive particle, a first electrode and a second electrode disposed at both end of the carbon-based linear structural body, so as to subject the carbon-based linear structural body including at least one conductive particle to connect between the first electrode and the second electrode. A process of manufacturing the electron device includes steps of: forming a carbon-based linear structural body including at least one conductive particle, using a catalyst of a first island and a second island selected from two or more of islands of the catalyst on a substrate; and forming a first electrode and a second electrode so as to connect the first electrode with the first island and one end of the carbon-based linear structural body, and the second electrode with the second island and the other end of the carbon-based linear structural body.

Electron device and process of manufacturing thereof

A plurality of conductive pads () are formed on a mounting surface of a mounting board. Conductive pads () are formed on a principal surface of a semiconductor chip () at positions corresponding to the conductive pads of the mounting board, when the principal surface faces toward the mounting board. A plurality of conductive nanotubes () extend from the conductive pads of one of the mounting board and the semiconductor chip. A press mechanism () presses the semiconductor chip against the mounting board and restricts a position of the semiconductor chip on the mounting surface to mount the semiconductor chip on the mounting board, in a state that tips of the conductive nanotubes are in contact with the corresponding conductive pads not formed with the conductive nanotubes.

Semiconductor device with semiconductor chips mounted on mounting board via conductive anaotubes

A Ti film is pattern-formed on a desired portion on a silicon substrate, and a Co film is formed on the substrate so as to cover the Ti film. CNTs are formed only on a portion, under which the Ti film is formed, of the surface of the Co film at approximately 600&#xb0; C. by a thermal CVD method. The length of the CNT can be controlled by adjusting the thickness of the Ti film.

Substrate structure and manufacturing method of the same

The invention provides a process for production of carbon nanotubes whereby a laminate prepared by alternating lamination of a metal catalyst and a material other than the metal catalyst is cut to expose the laminated structure, and carbon nanotubes are grown on the metal catalyst at the cut surface of the laminate. The process results in high-quality carbon nanotubes, with minimized bundle growth, which are each individually and independently arranged in a highly precise manner at prescribed locations. The invention also provides a carbon nanotube production process comprising a step of preparing a substrate which is inclined in one or two dimensions from a specific highly symmetrical crystal orientation and vapor depositing a metal catalyst along the atomic steps appearing on the surface of the substrate, and a step of growing the carbon nanotubes by chemical vapor deposition (CVD) using the metal catalyst as nuclei. It is thus possible to control the growth locations, diameters, orientation and chirality of carbon nanotubes.

Growing community of inventors

Kawasaki, Japan

Yuji Awano