Fujitsu Corporation

Yuji Akashi

Kaname Ozawa

Hayato Okuda

Katsuhito Kikuma

Akira Takashima

Takao Nishimura

Mitsutaka Ikeda

Yoshihiro Tsukidate

Mitsutaka Sato

Ryuji Nomoto

Akira Okada

Tetsuya Hiraoka

Tadashi Uno

Susumu Kida

Fumihiko Ando

Hiroshi Onodera

Katsuro Hiraiwa

Masahiko Harayama

Yosuke Hirumuta

Takeshi Ikuta

A semiconductor device of MCP structure, in which multiple semiconductor chips are provided in a single package and a method of manufacturing the same, that prevents damage of semiconductor chip that does not require burn-in and ensures the initial reliability of the semiconductor chip that requires the burn-in, are provided. The method has the steps of resin sealing and packaging the semiconductor chip that requires the burn-in and performing the burn-in to such packaged semiconductor chip; and mounting the semiconductor chip evaluated to be non-defective in the burn-in to the substrate along with the semiconductor chip not requiring the burn-in.

Semiconductor device having multiple semiconductor chips in a single package

In a stacked semiconductor device which has a plurality of semiconductor chips of desired sizes stacked as one package, a first semiconductor chip is mounted on a flexible printed wiring board provided with external connecting terminals. A printed circuit board is placed and mounted on the first semiconductor chip by flip-chip bonding. A second semiconductor chip is secured onto the printed circuit board. The second semiconductor chip is connected to the flexible printed wiring board by wire bonding. The first semiconductor chip is connected to the flexible printed wiring board by wire bonding via the printed circuit board.

Stacked semiconductor device and method of producing the same

A semiconductor device includes a substrate provided with a plurality of leads, a face-down semiconductor element provided on one surface of the substrate, a first stacked semiconductor element and a second stacked semiconductor element provided on another surface of the substrate and connected to the substrate by wires, and an extended wiring mechanism for connecting electrodes of the face-down semiconductor element and electrodes of the first and second semiconductor elements. The connected electrodes are equi-electrodes whose electrical characteristics are equal.

Semiconductor device

A semiconductor device includes the first through third semiconductor devices which are stacked on a substrate and the first through third wires for connecting the semiconductor elements and the substrate. The first wires serve to connect electrodes of the first semiconductor element positioned uppermost and electrodes of the second semiconductor element. The second wires serve to connect the electrodes of the second semiconductor element and electrodes of the third semiconductor element. The third wires serve to connect the electrodes of the third semiconductor element and bonding pads of the substrate. Between the first wires and the electrodes of the second semiconductor element and between the second wires and the electrodes of the third semiconductor element, stud bumps are provided so as to form space therebetween, thereby avoiding short-circuits therebetween.

Semiconductor device and method for producing the same

A semiconductor device is provided. This semiconductor device includes a resin package, a semiconductor chip, and leads consisting of inner leads and outer leads. The rear surface of the semiconductor chip and the inner leads are situated substantially on the same plane. The resin package is provided with notches on its mounting surface. The outer leads are bent inward along the exterior of the resin package and pulled around to the mounting surface, so that the edges of the outer leads are engaged with the notches.

Semiconductor device with leads engaged with notches

Growing community of inventors

Kasugai, Japan

Yuji Akashi