Mitsubishi Denki Kabushiki Kaisha

Mitsubishi Electric Corporation

Nec Corporation

Nippon Paper Industries Co., Ltd.

Nec Laboratories America, Inc.

Kabushiki Kaisha Ishida Koki Seisakusho

Nippon Steel Sumitomo Metal Corporation

Yuji Abe

Toshiyuki Oishi

Yasunori Tokuda

Naruhisa Miura

Masayuki Imaizumi

Yasuhiro Kagawa

Katsuomi Shiozawa

Rina Tanaka

Hiroshi Sugimoto

Kazushige Kawasaki

Yutaka Fukui

Kohei Sugihara

Teruhito Matsui

Toshiyuki Ohishi

Ting Wang

Philip N Ji

Akihiko Furukawa

Takeharu Kuroiwa

Hitoshi Sakuma

Satoshi Yamakawa

Kenichi Ohtsuka

Takumi Nakahata

Kyozo Kanamoto

Ken-ichi Ohtsuka

Seishi Matsumoto

Hidenobu Todoroki

Takeo Nakashimizu

Lei Xu

Shiro Hino

Hiroshi Takada

Osamu Matsuda

Shuhei Nakata

Masakazu Taki

Masayoshi Tarutani

Takashi Takenaga

Nobuyuki Tomita

Taisuke Furukawa

Zempei Kawazu

Kenichi Hamano

Nobuo Kadowaki

Akira Sakamoto

Hirofumi Kondo

Yoichiro Mitani

Takuma Nanjo

Takao Sawada

Arthur Dogariu

Hiroaki Sumitani

Muneyoshi Suita

Shingo Tomohisa

Lei Zong

Katsumasa Ono

Tomoaki Furusho

Shigetoshi Nara

Lei Zhong

Hiroaki Noguchi

Yukio Shini

Hironori Nakayama

Ken-ichi Ohisuka

Akio Hatano

Takeji Inadome

Kazuhiko Fukuoka

Keiko Hashiguchi

Nobuo Takeuchi

Satoshi Ishikawa

An insulated gate silicon carbide semiconductor device includes: a drift layer of a first conductivity type on a silicon carbide substrate of 4H type with a {0001} plane having an off-angle of more than 0&#xb0; as a main surface; a first base region; a source region; a trench; a gate insulating film; a protective diffusion layer; and a second base region. The trench sidewall surface in contact with the second base region is a surface having a trench off-angle of more than 0&#xb0; in a &#x3c;0001&#x3e; direction with respect to a plane parallel to the &#x3c;0001&#x3e; direction. The insulated gate silicon carbide semiconductor device can relieve an electric field of a gate insulating film and suppress an increase in on-resistance and provide a method for manufacturing the same.

Insulated gate silicon carbide semiconductor device and method for manufacturing same

A network authentication system includes a client terminal, an authentication server authenticating connection of the client terminal with an external network, and a plurality of authentication switches controlling communication of the client terminal with the external network. The authentication switch includes an authentication server processing unit notifying the authentication server of authentication terminal information, and a receiving port filter receives a specific packet. The authentication server, includes a terminal management storing unit storing the authentication terminal information, and an authentication switch management processing unit which, in order that the authentication switch authenticate the client terminal, determines filter information, that is set in the receiving port filter, based on the authentication terminal information, and notifies the authentication switch of the filter information. The authentication server processing unit updates the receiving port filter based on the filter information.

Network authentication system, network authentication method and network authentication server

Clupak paper is manufactured using a gap-former paper-making machine equipped with a Clupak system, in such a way that its longitudinal tensile energy absorption index and lateral tensile energy absorption index as specified in JIS P8113 become 2.5 J/g or more and 1.0 J/g or more, respectively. The paper has excellent strength characteristics in both the longitudinal and lateral directions, especially in the longitudinal direction so that when the Clupak paper can be processed into a sack, the sack rarely breaks.

Clupak paper

A source region of a MOSFET includes: a source contact region connected to a source pad; a source extension region adjacent to a channel region in a well region; and a source resistance control region arranged between the source extension region and the source contact region. The source resistance control region is different in an impurity concentration from the source extension region and the source contact region. These three regions are connected in series between the source pad and the channel region in the well region.

Semiconductor device

In a JBS diode using a wide band gap semiconductor, the wide band gap semiconductor has a large built-in voltage, which sometimes causes difficulties for the pn diode portion to turn on, resulting in a problem that resistance to surge currents is not sufficiently ensured. In order to solve this problem, in the wide-band-gap JBS diode, a pn junction of the pn diode is formed away from the Schottky electrode, and well regions are formed so as to have a width narrowed at a portion away from the Schottky electrode.

Semiconductor device including well regions with different impurity densities

A silicon carbide semiconductor device that reduces an influence of an off-angle of a silicon carbide substrate on characteristics of the semiconductor device and achieves improved operational stability and reduced resistance. In a trench-gate silicon carbide MOSFET semiconductor device, a high-concentration well region is formed in a well region, and a distance from a first sidewall surface of a trench of the silicon carbide semiconductor to the high-concentration well region is smaller than a distance from a second sidewall surface of the trench to the high-concentration well region, the second sidewall surface facing the first sidewall surface of the trench through the gate electrode.

Silicon-carbide semiconductor device and method for manufacturing the same

It is an object of the present invention to provide a silicon carbide semiconductor device that reduces an influence of an off-angle of a silicon carbide substrate on characteristics of the semiconductor device and achieves improved operational stability and reduced resistance. In a trench-gate silicon carbide MOSFET semiconductor device formed on the silicon carbide semiconductor substrate having the off-angle, a low-channel doped region is provided on a first sidewall surface side of the trench in a well region, and a high-channel doped region having an effective acceptor concentration lower than that of the low-channel doped region is provided on a second sidewall surface side of the trench in the well region.

Silicon-carbide semiconductor device and manufacturing method therefor

A method for the cathodic electrocoating of a tin-coated steel sheet in a treatment solution that does not contain any Cr compound, F or nitrite nitrogen. A tin oxide layer that is not subjected to a cathodic electrocoating treatment yet and is arranged on a tin-coated steel sheet is thinned to a specified thickness or less by a cathodic electrocoating treatment in an aqueous solution containing sodium carbonate or sodium hydrogen carbonate or an aqueous sulfuric acid solution immersion treatment, and the tin oxide layer is subjected to a cathodic electrocoating treatment in an aqueous solution of an alkaline metal sulfate containing a zirconium compound having a specified composition. In this manner, a coating film is formed on the tin oxide layer at a specific adhered amount in terms of Zr content.

Process for producing environmentally-friendly steel sheet for container material, environmentally-friendly steel sheet for container material, and laminated and pre-coated steel sheet for container material using the same

A method is provided in order to manufacture a silicon carbide epitaxial wafer whose surface flatness is very good and has a very low density of carrot defects and triangular defects arising after epitaxial growth. The silicon carbide epitaxial wafer is manufactured by a first step of annealing a silicon carbide bulk substrate that is tilted less than 5 degrees from &#x3c;0001&#x3e; face, in a reducing gas atmosphere at a first temperature Tfor a treatment time t, a second step of reducing the temperature of the substrate in the reducing gas atmosphere, and a third step of performing epitaxial growth at a second temperature Tbelow the annealing temperature Tin the first step, while supplying at least a gas including silicon atoms and a gas including carbon atoms.

Method of manufacturing silicon carbide epitaxial wafer

A magnetic field detection device including a magnetic body (magnetic flux guide) provided for adjusting a magnetic field to be applied to a magneto-resistance element. A shape of an on-substrate magnetic body in plan view is a tapered shape on one end portion side and a substantially funnel shape on another end portion side opposite the one end portion, the another end portion being larger in width than the one end portion, and a magneto-resistance element is disposed in front of an output-side end portion. In the on-substrate magnetic body, a contour of a tapered portion is not linear like a funnel, but has a curved shape in which a first curved portion protruding outward with a gentle curvature and a second curved portion protruding inward with a curvature similar to that of the first curved portion are continuously formed.

Magnetic field detection device

A semiconductor device and a manufacturing method thereof are provided which enable reduction and enhanced stability of contact resistance between the back surface of a nitride substrate and an electrode formed thereover. A nitride semiconductor device includes an n-type Ga&#x2014;N substrate () over which a semiconductor element is formed, and an n-electrode () as a metal electrode formed over the back surface of the GaN substrate (). A connection layer () is formed between the GaN substrate () and the n-electrode (), and the connection layer () is composed of a material that is other than nitride semiconductors and that contains silicon.

Nitride semiconductor device having a silicon-containing layer and manufacturing method thereof

The objective of the present invention is to provide a semiconductor device of a hetero-junction field effect transistor that is capable of obtaining a high output and a high breakdown voltage and a manufacturing method of the same. The present invention is a semiconductor device of a hetero-junction field effect transistor provided with an AlGaN channel layer with a composition ratio of Al being x (0&#x3c;x&#x3c;1) formed on a substrate, an AlGaN barrier layer with a composition of Al being y (0&#x3c;y&#x2266;1) formed on the channel layer, and source/drain electrodes and a gate electrode formed on the barrier layer, wherein the composition ratio y is larger than the composition ratio x.

Nitride semiconductor heterojunction field effect transistor having wide band gap barrier layer that includes high concentration impurity region

A tunable asymmetric interleaver constructed from two symmetric interleavers in series, wherein either or both of the individual symmetric interleavers exhibit a wavelength shifting ability. Advantageously, tunable asymmetric interleavers so constructed provide continuous tunable interleaving ratios from 0:100 to 50:50 to 100:0 and provide attractive upgrade paths for existing and future DWDM networks and applications.

Optical tunable asymmetric interleaver and upgrade for dense wavelength division multiplexed networks

A P-type electrode material is provided on a top surface of a P-type contact layer. The P-type electrode material is formed with an AuGa film, an Au film, a Pt film, and an Au film. The AuGa film is provided on the P-type contact layer. The Au film is provided on the AuGa film. The Pt film is provided on the Au film. The Au film is provided on the Pt film. With this, a nitride semiconductor device having a P-type electrode which can decrease a contact resistance between a P-type contact layer and the P-type electrode is obtained.

Nitride semiconductor device and method of manufacturing the same

Growing community of inventors

Tokyo, Japan

Yuji Abe