Canon Kabushiki Kaisha

Taiwan Semiconductor Manufacturing Comp. Ltd.

Yuichiro Yamashita

Masahiro Kobayashi

Yusuke Onuki

Jhy-Jyi Sze

Dun-Nian Yaung

Takashi Matsuda

Shyh-Fann Ting

Hidekazu Takahashi

Shin Kikuchi

Yu-Jen Wang

Ching-Chun Wang

Akira Okita

Chun-Yuan Chen

Keng-Yu Chou

Hsiao-Hui Tseng

Jen-Cheng Liu

Alexander Kalnitsky

Chien-Hsien Tseng

Hirofumi Sumi

Toru Koizumi

Takeshi Ichikawa

Takanori Watanabe

Chen-Jong Wang

Toshiaki Ono

Yimin Huang

Tzu-Hsuan Hsu

Shigetoshi Sugawa

Seiji Hashimoto

Hiroki Hiyama

Tetsuya Itano

Shin Hasegawa

Mineo Shimotsusa

Tetsunobu Kochi

Katsuhito Sakurai

Masanori Ogura

Isamu Ueno

Nobuhiro Takeda

Hsueh-Liang Chou

Tzu-Jui Wang

Takeshi Kojima

Shoji Kono

Chun-Hao Chuang

Shinichiro Shimizu

Masaru Fujimura

Yu Arishima

Yen-Ting Chiang

Ginjiro Toyoguchi

Itsutaku Sano

Wei-Chieh Chiang

Takafumi Kishi

Masaaki Minowa

Masaya Ogino

Kuo-Chin Huang

Junji Iwata

Yoshihito Harada

Satoshi Kato

Po-Sheng Chou

Masaaki Iwane

Kazuaki Hashimoto

Takamasa Sakuragi

Wen-I Hsu

Seiji Takahashi

Kazuki Ohshitanai

Shuichiro Sugiyama

Kentarou Suzuki

Shinsuke Kojima

Yasuo Yamazaki

Tse-Hua Lu

Takeru Suzuki

Takashi Sugai

Michiko Johnson

Tomoya Yoneda

Ming-Chieh Hsu

Po-Chun Chiu

Kai-Ling Chiu

Masayuki Uchiyama

Image sensor structures are provided. The image sensor structure includes a substrate and a light-sensing region formed in the substrate. The image sensor structure further includes a first isolation structure surrounding the light sensing region and having an opening region in a top view and a second isolation structure formed in the substrate. In addition, the second isolation structure surrounds the light-sensing region and vertically overlaps both the opening region and the first isolation structure. The image sensor structure further includes a first gate structure formed over the substrate and overlapping the opening region, the first isolation structure, and the second isolation structure.

Image sensor

The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes an image sensor disposed within a substrate. The substrate has sidewalls and a horizontally extending surface defining one or more trenches extending from a first surface of the substrate to within the substrate. One or more isolation structures are arranged within the one or more trenches. A doped region is arranged within the substrate laterally between sidewalls of the one or more isolation structures and the image sensor and vertically between the image sensor and the first surface of the substrate. The doped region has a higher concentration of a first dopant type than an abutting part of the substrate that extends along opposing sides of the image sensor.

Extra doped region for back-side deep trench isolation

In a photoelectric conversion apparatus including charge storing portions in its imaging region, isolation regions for the charge storing portions include first isolation portion each having a PN junction, and second isolation portions each having an insulator. A second isolation portion is arranged between a charge storing portion and at least a part of a plurality of transistors.

Photoelectric conversion apparatus and imaging system using the same

An image sensor includes a semiconductor substrate having first and second faces. The sensor includes a plurality of pixel groups each including pixels, each pixel having a photoelectric converter and a wiring pattern, the converter including a region whose major carriers are the same with charges to be accumulated in the photoelectric converter. The sensor also includes a microlenses which are located so that one microlens is arranged for each pixel group. The wiring patterns are located at a side of the first face, and the plurality of microlenses are located at a side of the second face. Light-incidence faces of the regions of the photoelectric converters of each pixel group are arranged along the second face such that the light-incidence faces are apart from each other in a direction along the second face.

Solid-state image sensor and camera

A single photon avalanche diode (SPAT) image sensor is disclosed. The SPAT) image sensor include: a substrate of a first conductivity type, the substrate having a front surface and a back surface; a deep trench isolation (DTI) extending from the front surface toward the back surface of the substrate, the DTI having a first surface and a second surface opposite to the first surface, the first surface being level with the front surface of the substrate; an epitaxial layer of a second conductivity type opposite to the first conductivity type, the epitaxial layer surrounding sidewalls and the second surface of the DTI; and an implant region of the first conductivity type extending from the front surface to the back surface of the substrate. An associated method for fabricating the SPAD image sensor is also disclosed.

SPAD image sensor and associated fabricating method

A single photon avalanche diode (SPAD) image sensor is disclosed. The SPAD image sensor includes: a substrate having a front surface and a back surface; wherein the substrate includes a sensing region, and the sensing region includes: a common node heavily doped with dopants of a first conductivity type, the common node being within the substrate and abutting the back surface of the substrate; a sensing node heavily doped with dopants of a second conductivity type opposite to the first conductivity type, the sensing node being within the substrate and abutting the front surface of the substrate; and a first layer doped with dopants of the first conductivity type between the common node and the sensing node.

The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes an image sensing element disposed within a semiconductor substrate. One or more isolation structures are arranged within one or more trenches disposed along a first surface of the semiconductor substrate. The one or more isolation structures are separated from opposing sides of the image sensing element by non-zero distances. The one or more trenches are defined by sidewalls and a horizontally extending surface of the semiconductor substrate. A doped region is laterally arranged between the sidewalls of the semiconductor substrate defining the one or more trenches and is vertically arranged between the image sensing element and the first surface of the semiconductor substrate.

An image sensor is disclosed. The image sensor includes: a common node heavily doped with dopants of a first conductivity type, the common node being within the substrate and abutting the front surface of the substrate; and a sensing node heavily doped with dopants of a second conductivity type opposite to the first conductivity type, the sensing node being within the substrate and abutting the front surface of the substrate; an interconnect structure, wherein the front surface of the substrate faces the interconnect structure; a distributed Bragg reflector (DBR) between the front surface of the substrate and the interconnect structure; a first contact plug passing through the DBR and coupling the common node to the interconnect structure; and a second contact plug passing through the DBR and coupling the sensing node to the interconnect structure.

Image sensor and associated fabricating method

An imaging apparatus includes a plurality of pixels, a signal holding unit, first and second control electrodes. Each of the plurality of pixels includes a photoelectric conversion unit, and an amplification element to amplify signals based on signal charges generated by the photoelectric conversion unit, in which the plurality of pixels output signals for performing a phase contrast detection type of focal point detection. The signal holding unit is in an electrical pathway between an output node of the photoelectric conversion unit and an input node of the amplification element, in which signals for performing the phase contrast detection type of focal point detection are held. The first control electrode is configured to transfer a signal of the photoelectric conversion unit to the signal holding unit. The second control electrode is configured to transfer a signal for performing the phase difference detection type of focal point detection.

Imaging apparatus with phase contrast detection type of focal point detection

An image sensor is disclosed. The image sensor includes an epitaxial layer, a plurality of plug structures and an interconnect structure. Wherein the plurality of plug structures are formed in the epitaxial layer, and each plug structure has doped sidewalls, the epitaxial layer and the doped sidewalk form a plurality of photodiodes, the plurality of plug structures are used to separate adjacent photodiodes, and the epitaxial layer and the doped sidewalls are coupled to the interconnect structure via the plug structures. An associated method of fabricating the image sensor is also disclosed. The method includes: providing a substrate having a first-type doped epitaxial substrate layer on a second-type doped epitaxial substrate layer; forming a plurality of isolation trenches in the first-type doped epitaxial substrate layer; forming a second-type doped region along sidewalk and bottoms of the plurality of isolation trenches; and filling the plurality of isolation trenches by depositing metal.

Implant damage free image sensor and method of the same

Image sensor structures are provided. The image sensor structure includes a substrate having a front side and a backside and a light-sensing region formed in the substrate. The image sensor structure further includes a front side isolation structure surrounding the light sensing region and having an opening region in a top view and a backside isolation structure formed at the backside of the substrate and encompassing the light-sensing region and vertically overlapping the opening region. The image sensor structure further includes a first gate structure formed over the front side of the substrate and overlapping the opening region and the front side isolation structure and a storage node in the substrate adjacent to the first gate structure. In addition, the storage node extends into the opening region.

An image sensor device includes a plurality of color filter units arranged in an array, each of the color filter units comprising an array of n*m color filters, and n and m are integers equal to or greater than 3. The plurality of color filter units includes a plurality of first color filter units, a plurality of second color filter units, and a plurality of third color filter units. The color filters of the first color filter units are transmissive to light beams within a first wavelength range, the color filters of the second color filter units are transmissive to light beams within a second wavelength range, and the color filters of the third color filter units are transmissive to light beams within a third wavelength range.

Image sensor device having color filter arrays and image processing method thereof

Methods for forming an image sensor structure are provided. The method includes forming a light-sensing region in a substrate and forming a storage node adjacent to light-sensing region in the substrate. The method further includes forming a front side isolation structure partially surrounding an upper portion of the light-sensing region and forming a trench fully surrounding a bottom portion of the light-sensing region to expose a bottom surface of the front side isolations structure. The method further includes forming a backside isolation structure in the trench.

Method for manufacturing image sensor

Growing community of inventors

Ebina, Japan

Yuichiro Yamashita