Tdk Corporation

Yuichiro Sueda

Toshihiro Iguchi

Ryota Namiki

Atsushi Watanabe

Kazuhiro Komatsu

Satoshi Sugawara

Shuhei Yoshikawa

Yasuhiro Okui

Shota Kumagai

Takeshi Shouji

Yoichiro Hoshi

Kengo Aizawa

Masatoshi Tarutani

Atsushi Yamada

Manabu Kumagai

A dielectric composition, including: dielectric grains containing a main component represented by a composition formula [(CaSr)O][(TiHfZr)O] (m is more than 1.020); a grain boundary phase located between the dielectric grains; and segregation grains each containing at least Ca, Si, and O. A first segregation grain is defined as a segregation further containing Mn among the segregation grains each containing at least Ca, Si, and O, and a second segregation grain is defined as a segregation containing substantially no Mn among the segregation grains each containing at least Ca, Si, and O. N1/(N1+N2) is more than 0.23 and 1.00 or less, in which N1 is a number density of first segregation grains in a cross-section of the dielectric composition, and N2 is a number density of second segregation grains in the cross-section of the dielectric composition.

Dielectric composition and multilayer ceramic electronic component

A multilayer electronic device, including an element body constituted by alternately laminating dielectric layers and internal electrode layers, in which: a molar ratio of MgO to SiOin the dielectric layer is 1 to 5, a molar ratio of MgO to MnO in the dielectric layer is 5 to 13, the element body contains a segregation phase, and assuming that a total amount of MgO, NiO, MnO, CrO, and SiOin the segregation phase is 100 molar parts, an amount of MgO in the segregation phase is 63.0 to 99.5 molar parts, and an amount of MnO in the segregation phase is 0.5 to 12.6 molar parts.

Multilayer electronic device

A dielectric composition includes dielectric particles and first segregations. The dielectric particles each include a perovskite compound represented by ABOas a main component. The first segregations each include at least Ba, V, and O. A molar ratio (Ba/Ti) of Ba to Ti detected in the first segregations is 1.20 or more.

Dielectric composition and multilayer ceramic electronic device

A dielectric composition includes dielectric particles and first segregations. The dielectric particles each include a perovskite compound represented by ABOas a main component. The first segregations each include Ba, Ti, Si, Ni, and O.

A ceramic electronic device includes an element body and an external electrode. The element body includes a ceramic layer and an internal electrode layer. The external electrode is formed on an end surface of the element body and electrically connected to a part of the internal electrode layer. The ceramic layer includes a perovskite compound represented by ABOas a main component. The external electrode includes a baked electrode layer having a first region and a second region. The first region is contacted with the end surface of the element body and located near a joint boundary with the element body. The second region is located outside the first region and constitutes an outer surface of the baked electrode layer. The first region includes a glass frit including at least B and Si. The second region includes an Al based oxide mainly including Al.

Ceramic electronic device

A dielectric composition includes dielectric particles and first segregations. The dielectric particles each include a perovskite compound represented by ABOas a main component. The first segregations each include at least Ba, P, and O. A molar ratio (Ba/Ti) of Ba to Ti in the first segregations is 1.20 or more.

A ceramic electronic device includes an element body and an external electrode. The element body is formed by laminating a ceramic layer and an internal electrode layer. The external electrode is electrically connected to at least one end of the internal, electrode layer. The element body includes a boundary layer at an end of the ceramic layer. The ceramic layer includes a perovskite compound represented by ABOas a main component. The boundary layer includes Ba and Ti as a main component. The boundary layer includes 0.27-0.40 parts by mol of Ba, provided that a total of Ba and Ti included in the boundary layer is 1 part by mol.

Ceramic electronic device having an element body with a boundary layer including Ba and Ti at an end of a ceramic layer

A ceramic electronic device includes an element body and an external electrode. The element body is formed by laminating a ceramic layer and an internal electrode layer. The external electrode is electrically connected to at least one end of the internal electrode layer. At least a part of a joint boundary between the electrode layer and the ceramic layer includes an interface protrusion on the external electrode side. The interface protrusion is made of an oxide.

A ceramic electronic device includes an element body and an external electrode. The element body includes a ceramic layer and an internal electrode layer. The external electrode is formed on an end surface of the element body and electrically connected to a part of the internal electrode layer. The ceramic layer includes a perovskite compound represented by ABOas a main component. The external electrode includes a baked electrode layer having a first region and a second region. The first region is contacted with the end surface of the element body and located near a joint boundary with the element body. The second region is located outside the first region and constitutes an outer surface of the baked electrode layer. The first region includes a glass frit including at least B, Zn, and Si. The second region includes an oxide having a higher melting point than Cu.

A ceramic electronic device includes an element body and an external electrode. The element body includes a ceramic layer and an internal electrode layer. The external electrode is formed on an end surface of the element body and electrically connected to a part of the internal electrode layer. The ceramic layer includes a perovskite compound represented by ABOas a main component. The external electrode includes a conductor and a glass frit diffused in the conductor. The glass frit includes B, Si, Ba, and Zn. A boundary layer is present at an end of the ceramic layer in contact with the external electrode on the end surface of the element body and comprises an oxide including Ba, Zn, and Si.

A ceramic electronic device includes an element body and an external electrode. The element body is formed by laminating a ceramic layer and an internal electrode layer. The external electrode is electrically connected to at least one end of the internal electrode layer. The external electrode includes a baked electrode layer. The baked electrode layer includes a first region and a second region. The first region is contacted with an end surface of the element body and located near a joint boundary with the element body. The second region is located outside the first region and constituting an outer surface of the baked electrode layer. The first region includes a first glass having a predetermined composition. The second region includes a second glass having a predetermined composition.

A dielectric ceramic composition includes, as a main component, a compound having perovskite type crystal structure shown by a general formula ABO, as subcomponents, in terms of respective element with respect to 100 moles of the compound, and 0.6 to 2.0 moles of an oxide of Mg, 0.010 to 0.6 mole of oxide of Mn and/or Cr, 0.010 to 0.2 mole of an oxide of at least one selected from V, Mo and W, 0.10 to 1.0 mole of an oxide of R1 (R1 is at least one selected from Y, Yb, Er and Ho), 0.10 to 1.0 mole of an oxide of R2 (R2 is at least one selected from Dy, Gd and Tb) and 0.2 to 1.5 moles of a component consisting of an oxide of Ba and/or oxide of Ca and an oxide of Si. According to the present invention, even when a dielectric layer is made thinner, a dielectric ceramic composition having good characteristics can be provided.

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Tokyo, Japan

Yuichiro Sueda