Nitto-denko Corporation

Yuichiro Shishido

Takeshi Matsumura

Sadahito Misumi

Koichi Inoue

Miki Hayashi

Miki Morita

Kenji Onishi

Kouichi Inoue

Kenji Oonishi

Provided is an adhesive film that enables manufacturing of a high quality semiconductor device with good yield ratio, and related methods of manufacturing a semiconductor device, and semiconductor devices. Provided is an adhesive film for embedding a first semiconductor element fixed to an adherend and fixing a second semiconductor element that is different from the first semiconductor element to the adherend, wherein the adhesive film has a thickness T that is larger than a thickness Tof the first semiconductor element, and the adherend and the first semiconductor element are connected by wire bonding and a difference between the thickness T and the thickness Tis 40 &#x3bc;m or more and 260 &#x3bc;m or less, or the adherend and the first semiconductor element are connected by flip-chip bonding and a difference between the thickness T and the thickness Tis 10 &#x3bc;m or more and 200 &#x3bc;m or less.

Adhesive film, method of manufacturing semiconductor device, and semiconductor device

The present invention provides a die bond film for adhering, onto a semiconductor element that is electrically connected to an adherend with a bonding wire, another semiconductor element and that enables loading of the other semiconductor element and improvement in the manufacturing yield of a semiconductor device by preventing deformation and cutting of the bonding wire, and a dicing die bond film. The die bond film of the present invention is a die bond film for adhering, onto a semiconductor element that is electrically connected to an adherend with a bonding wire, another semiconductor element, in which at least a first adhesive layer that enables a portion of the bonding wire to pass through inside thereof by burying the portion upon press bonding and a second adhesive layer that prevents the other semiconductor element from contacting with the bonding wire are laminated.

Die bond film, dicing die bond film, and semiconductor device

The present invention aims to provides a method of manufacturing a film for a semiconductor device in which a dicing film, a die bond film, and a protecting film are laminated in this order, including the steps of: irradiating the die bond film with a light ray having a wavelength of 400 to 800 nm to detect the position of the die bond film based on the obtained light transmittance and punching the dicing film out based on the detected position of the die bond film, and in which T/Tis 0.04 or more, wherein Tis the light transmittance of the portion where the dicing film and the protecting film are laminated and Tis the light transmittance of the portion where the dicing film, the die bond film, and the protecting film are laminated.

Method of manufacturing film for semiconductor device

The present invention provides a dicing film with a protecting film that enables to paste a dicing film to a semiconductor wafer without a shift in position while reducing a downtime. There is provided a dicing film with a protecting film in which a dicing film and a protecting film are laminated, wherein the difference between the transmittance of the protecting film and the transmittance of the dicing film with a protecting film at a portion of the dicing film where light for detecting a film transmits first is 20% or more in a wavelength of 600 to 700 nm.

Growing community of inventors

Ibaraki, Japan

Yuichiro Shishido