Jx Nippon Mining Metals Corporation

Nippon Mining & Metals Co., Ltd.

Nikko Materials Company, Limited

Yuichiro Shindo

Kouichi Takemoto

Kazuto Yagi

Masataka Yahagi

Hideo Takami

Yasuhiro Yamakoshi

Atsushi Fukushima

Susumu Shimamoto

Gaku Kanou

Hideyuki Takahashi

Masahiro Takahata

Koichi Takemoto

Eiji Hino

Akira Hisano

Mitsuru Yamaguchi

Hideaki Fukuyo

Masahiro Sakaguchi

Syunichiro Yamaguchi

Provided is a high-purity titanium ingot having a purity, excluding an additive element and gas components, of 99.99 mass % or more, wherein at least one nonmetallic element selected from S, P, and B is contained in a total amount of 0.1 to 100 mass ppm as the additive component and the variation in the content of the nonmetallic element between the top, middle, and bottom portions of the ingot is within &#xb1;200%. Provided is a method of manufacturing a titanium ingot containing a nonmetallic element in an amount of 0.1 to 100 mass ppm, wherein S, P, or B, which is a nonmetallic element, is added to molten titanium as an intermetallic compound or a master alloy to produce a high-purity titanium ingot having a purity, excluding an additive element and gas components, of 99.99 mass % or more. It is an object of the present invention to provide a high-purity titanium having decreased intra- and inter-ingot variations in the content of the nonmetallic element, a uniform structure, and improved strength by containing at least one nonmetallic element selected from S, P, and B.

High-purity titanium ingots, manufacturing method therefor, and titanium sputtering target

Provided is a neodymium-based rare earth permanent magnet having a purity of 99.9 wt % or higher excluding gas components and component elements. The present invention can remarkably improve the magnetic properties in a neodymium-based rare earth permanent magnet by highly purifying the magnetic materials. Furthermore, the present invention aims to provide a high-performance neodymium-based rare earth permanent magnet with improved heat resistance and corrosion resistance, which are inherent drawbacks of magnetic materials.

Neodymium-based rare earth permanent magnet and process for producing same

High purity manganese having a purity of 3N (99.9%) or more, wherein number of non-metal inclusions with a size of 0.5 &#x3bc;m or more is 50000 or less per 1 g of the high purity manganese. A method for producing high purity manganese, wherein refining is performed using a raw material (secondary raw material) obtained by acid-washing a manganese raw material (primary raw material) so that the produced high purity manganese has a purity of 3N (99.9%) or more, and number of non-metal inclusions with a size of 0.5 &#x3bc;m or more is 50000 or less per 1 g of the high purity manganese. The present invention provides a method for producing high purity metal manganese from commercially available manganese, and aims to obtain high purity metal manganese having a low LPC.

High purity manganese and method for producing same

High purity copper having a purity of 6N or higher, wherein content of each of the respective components of P, S, 0, and C is 1 ppm or less, and nonmetal inclusions having a particle size of 0.5 &#x3bc;m or more and 20 &#x3bc;m or less contained in the copper are 10,000 inclusions/g or less. As a result of using high purity copper or high purity copper alloy as the raw material from which harmful P, S, C, O-based inclusions have been reduced and controlling the existence form of nonmetal inclusions, it is possible to reduce the occurrence of rupture of a bonding wire and improve the reproducibility of mechanical properties, or reduce the percent defect of a semiconductor device wiring formed by sputtering a high purity copper target with favorable reproducibility.

High purity copper and method of producing high purity copper based on electrolysis

Provided is a high-purity copper or high-purity copper alloy sputtering target of which the purity is 6N or higher and in which the content of the respective components of P, S, O and C is 1 ppm or less, wherein the number of nonmetal inclusions having a particle size of 0.5 &#x3bc;m or more and 20 &#x3bc;m or less is 30,000 inclusions/g or less. As a result of using high-purity copper or high-purity copper alloy from which harmful inclusions of P, S, C and O system have been reduced as the raw material and controlling the existence form of nonmetal inclusions, the present invention addresses a reduction in the percent defect of wirings of semiconductor device formed by sputtering a high-purity copper target so as to ensure favorable repeatability.

High-purity copper or high-purity copper alloy sputtering target, process for manufacturing the sputtering target, and high-purity copper or high-purity copper alloy sputtered film

High purity tin and tin alloy are provided in which the respective contents of U and Th are 5 ppb or less, the respective contents of Pb and Bi are 1 ppm or less, and the purity is 5N or higher, provided that this excludes the gas components of O, C, N, H, S and P. A cast ingot of the tin or alloy has an &#x3b1; ray count of 0.001 cph/cmor less. Since recent semiconductor devices are densified and of large capacity, there is risk of a soft error occurring due to &#x3b1; ray from materials in the vicinity of the semiconductor chip. Thus, there are demands for purifying soldering material used in the vicinity of semiconductor devices, and materials with fewer &#x3b1; rays. The disclosed tin, alloy, and method reduce &#x3b1; dose of tin so as to be adaptable as the foregoing material.

Process for producing high-purity tin

Provided are high-purity lanthanum, wherein the purity excluding rare-earth elements and gas components is 4N or higher, and amounts of aluminum, iron and copper in the lanthanum are respectively 100 wtppm or less; as well as high-purity lanthanum, wherein the purity excluding rare-earth elements and gas components is 4N or higher, amounts of aluminum, iron and copper in the lanthanum are respectively 100 wtppm or less, oxygen content is 1500 wtppm or less, elements of alkali metals and alkali earth metals are respectively 1 wtppm or less, elements of transition metals and high-melting-point metals other than those above are respectively 10 wtppm or less, and radioactive elements are respectively 10 wtppb or less. The invention aims to provide technology capable of efficiently and stably providing high-purity lanthanum, a sputtering target comprising high-purity lanthanum, and a thin film for metal gate mainly comprising high-purity lanthanum.

High-purity lanthanum, sputtering target comprising high-purity lanthanum, and metal gate film mainly comprising high-purity lanthanum

Provided are a high purity Ni&#x2014;V alloy, high purity Ni&#x2014;V alloy target and high purity Ni&#x2014;V alloy thin film wherein the purity of the Ni&#x2014;V alloy excluding Ni, V and gas components is 99.9 wt % or higher, and the V content variation among ingots, targets or thin films is within 0.4%. With these high purity Ni&#x2014;V alloy, high purity Ni&#x2014;V alloy target and high purity Ni&#x2014;V alloy thin film having a purity of 99.9 wt % or higher, the variation among ingots, targets or thin films is small, the etching property is improved, and isotopic elements such as U and Th that emit alpha particles having an adverse effect on microcircuits in a semiconductor device are reduced rigorously. And further provided is a manufacturing method of such high purity Ni&#x2014;V alloy capable of effectively reducing the foregoing impurities.

High-purity Ni-V alloy target therefrom high-purity Ni-V alloy thin film and process for producing high-purity Ni-V alloy

Proposed is a method of recovering valuable metal from scrap containing conductive oxide including the steps of using an insoluble electrode as either an anode or a cathode, using a scrap containing conductive oxide as the counter cathode or anode, performing electrolysis while periodically inverting the polarity, and recovering the scrap as hydroxide. With the foregoing method of recovering valuable metal from scrap containing conductive oxide, oxide system scrap is conductive oxide and a substance that can be reduced to metal or suboxide with hydrogen. This method enables the efficient recovery of valuable metal from sputtering target scrap containing conductive oxide or scrap such as mill ends of conductive oxide that arise during the production of such a sputtering target.

Method of recovering valuable metal from scrap containing conductive oxide

Proposed is a method of recovering valuable metal from scrap containing conductive oxide including the steps of using scrap containing conductive oxide and performing electrolysis while periodically inverting the polarity, and recovering the scrap as hydroxide. With the foregoing method of recovering valuable metal from scrap containing conductive oxide, oxide system scrap is conductive oxide and a substance that can be reduced to metal or suboxide with hydrogen. This method enables to efficiently recover valuable metal from sputtering target scrap containing conductive oxide or scrap such as mill ends of conductive oxide that arise during the production of such a sputtering target.

Method of recovering valuable metal from scrap conductive oxide

Provided is a method of recovering valuable metal from oxide system scrap including the steps of performing electrolysis using an insoluble electrode as an anode and an oxide system scrap as a cathode, and recovering the scrap of the cathode as metal or suboxide. Specifically, this method enables the efficient recovery of valuable metal from oxide system scrap of an indium-tin oxide (ITO) sputtering target or oxide system scrap such as mill ends that arise during the production of such a sputtering target.

Provided is a method of producing high purity ytterbium, wherein the high purity ytterbium is obtained by reducing crude ytterbium oxide in a vacuum with reducing metals composed of metals having a low vapor pressure, and selectively distilling ytterbium. Additionally provided are methods of achieving the high purification of ytterbium which has a high vapor pressure and is hard to refine in a molten state, and high purity ytterbium obtained thereby. Further provided is technology for efficiently and stably obtaining a sputtering target made of high purity material ytterbium, and a thin film for metal gates containing high purity material ytterbium.

High purity ytterbium, sputtering target made thereof, thin film containing the same, and method of producing the same

A high purity ZrBpowder having a purity of 99.9 wt % or higher excluding C and gas components, and a manufacturing method of such high purity ZrBpowder, including the steps of: subjecting a Zr sponge raw material to electron beam melting and casting to prepare an ingot having a purity of 99.9 wt % or higher; cutting the ingot into a cut powder and hydrogenating the cut powder into ZrH; pulverizing and dehydrogenating the resultant product into a Zr powder and oxidizing the Zr powder at a high temperature in an oxygen atmosphere into a ZrOfine powder; and mixing the ZrOfine powder with B having a purity of 99.9 wt % or higher so as to reduce ZrOand obtain a ZrBpowder having a purity of 99.9 wt % or higher. Purity of the ZrBpowder for use in sintering is made to be 99.9 wt % or higher, which is required in the manufacture of a ZrBsingle crystal substrate with the high frequency induction heating FZ method (Floating Zone Method), and it is thereby possible to obtain a high purity ZrBpowder and the manufacturing method thereof enabling the enlargement of a ZrBsingle crystal substrate and reduction in the manufacturing costs associated therewith.

[object Object]

In light of the recent analytical technology demanded of fast and accurate measurement of high purity materials, a zirconium crucible is provided for melting an analytical sample and is capable of inhibiting the inclusion of impurities from the crucible by using a high-purity crucible, improving the durability of high-purity zirconium as an expensive crucible material, and increasing the number of times that the zirconium crucible can be used. With this zirconium crucible used for melting an analytical sample in the pretreatment of the analytical sample, the purity excluding gas components is 3N or higher, and the content of carbon as a gas component is 100 mass ppm or less.

Zirconium crucible

Provided are a method of recovering valuable metals from IZO scrap, wherein indium and zinc are recovered as hydroxides by using an IZO scrap as both an anode and a cathode, and performing electrolysis while periodically reversing polarity; and a method of recovering valuable metals from IZO scrap, wherein the hydroxides of indium and zinc obtained by the electrolysis are roasted and indium and zinc are recovered as oxides. Specifically, provided is a method which enables the efficient recovery of indium and zinc from IZO scrap such as a spent indium-zinc oxide (IZO) sputtering target and IZO mill ends arising during the manufacture of such a sputtering target.

Growing community of inventors

Ibaraki, Japan

Yuichiro Shindo