Panasonic Corporation

Matsushita Electric Industrial Co., Ltd.

Mitsubishi Electric Corporation

Sumitomo Heavy Industries, Ltd.

Riken Corporation

Panaosnic Corporation

Yuichiro Sasaki

Bunji Mizuno

Katsumi Okashita

Tomohiro Okumura

Ichiro Nakayama

Hiroyuki Ito

Cheng-Guo Jin

Keiichi Nakamoto

Satoshi Maeshima

Hisataka Kanada

Fumitoshi Yamashita

Masafumi Kubota

Takeshi Katayama

Shigenori Hayashi

Tamaki Watanabe

Kichiji Hatanaka

Shinichi Watanabe

Hideki Tamura

Takeo Kawaguchi

Toshio Kudo

Hisao Nagai

Minoru Aoki

Takayuki Kai

Yoshihide Kikuichi

Tetsuro Yanagi

Koji Mio

Hideaki Shigekiyo

Noriyuki Sakudo

Eiji Uenishi

Shinji Toda

T c/o Matsushita Electric Indus Co Ltd Okumura

An object is to easily inject resin into a gap of a laminated core which constitutes a rotating electric machine. Included are: a resin supplying unit which feeds the resin; and a resin injection unit which injects the resin into an axial hole of the laminated core. The resin injection unit has an injection pipe and an elastic ring attached to the injection pipe. This elastic ring is made to firmly attach to the inner periphery of the axial hole; the resin is supplied from the resin supplying unit; and the resin is injected into the gap of the laminated core through the axial hole of the laminated core.

Resin injection method into laminated core, and rotating electric machine using the resin injection method

In order to realize a plasma doping method capable of carrying out a stable low-density doping, exhaustion is carried out with a pump while introducing a predetermined gas into a vacuum chamber from a gas supplying apparatus, the pressure of the vacuum chamber is held at a predetermined pressure and a high frequency power is supplied to a coil from a high frequency power source. After the generation of plasma in the vacuum chamber, the pressure of the vacuum chamber is lowered, and the low-density plasma doping is performed to a substrate placed on a substrate electrode. Moreover, the pressure of the vacuum chamber is gradually lowered, and the high frequency power is gradually increased, thereby the low-density plasma doping is carried out to the substrate placed on the substrate electrode. Furthermore, a forward power Pf and a reflected power Pr of the high frequency power supplied to the substrate electrode are sampled at a high speed, and when a value of which the power difference Pf-Pr is integrated with respect to time reaches a predetermined value, the supply of the high frequency power is suspended.

Plasma doping method and plasma doping apparatus

In a plasma doping device according to the invention, a vacuum chamber is evacuated with a turbo-molecular pump as an exhaust device via a exhaust port while a predetermined gas is being introduced from a gas supply device in order to maintain the inside of the vacuum chamber to a predetermined pressure with a pressure regulating valve. A high-frequency power of 13.56 MHz is supplied by a high-frequency power source to a coil provided in the vicinity of a dielectric window opposed to a sample electrode to generate inductive-coupling plasma in the vacuum chamber. A high-frequency power source for supplying a high-frequency power to the sample electrode is provided. Uniformity of processing is enhanced by driving a gate shutter and covering a through gate.

Plasma doping method with gate shutter

After a fin-semiconductor region () is formed on a substrate (), impurity-containing gas and oxygen-containing gas are used to perform plasma doping on the fin-semiconductor region (). This forms impurity-doped region () in at least side portions of the fin-semiconductor region ().

Method for fabricating semiconductor device and plasma doping apparatus

First and second gate insulating films are formed so as to cover at least the upper corner of first and second fin-shaped semiconductor regions. The radius of curvature r' of the upper corner of the first fin-shaped semiconductor region located outside the first gate insulating film is greater than the radius of curvature rof the upper corner of the first fin-shaped semiconductor region located under the first gate insulating film and is less than or equal to 2&#xd7;r. The radius of curvature r&#x2032; of the upper corner of the second fin-shaped semiconductor region located outside the second gate insulating film is greater than the radius of curvature rof the upper corner of the second fin-shaped semiconductor region located under the second gate insulating film and is less than or equal to 2&#xd7;r

Method for producing a semiconductor device have fin-shaped semiconductor regions

A method for fabricating a semiconductor device includes: forming a fin-type semiconductor region on a substrate; and introducing an n-type impurity into at least a side of the fin-type semiconductor region by a plasma doping process, thereby forming an n-type impurity region in the side of the fin-type semiconductor region. In the introducing the n-type impurity, when a source power in the plasma doping process is denoted by a character Y [W], the supply of a gas containing the n-type impurity per unit time and per unit volume is set greater than or equal to 5.1&#xd7;10/((1.7/2)&#xd7;(Y/500)) [mol/(min&#xb7;L&#xb7;sec)], and the supply of a diluent gas per unit time and per unit volume is set greater than or equal to 1.7&#xd7;10/((20/2)&#xd7;(Y/500)) [mol/(min&#xb7;L&#xb7;sec)].

Semiconductor device and method for fabricating the same

With the evacuation of an interior of a vacuum chamber halted and with gas supply into the vacuum chamber halted, in a state that a mixed gas of helium gas and diborane gas is sealed in the vacuum chamber, a plasma is generated in a vacuum vessel and simultaneously a high-frequency power is supplied to a sample electrode. By the high-frequency power supplied to the sample electrode, boron is introduced to a proximity to a substrate surface.

Plasma processing method and apparatus

A fin-semiconductor region () is formed on a substrate (). A first impurity which produces a donor level or an acceptor level in a semiconductor is introduced in an upper portion and side portions of the fin-semiconductor region (), and oxygen or nitrogen is further introduced as a second impurity in the upper portion and side portions of the fin-semiconductor region ().

Semiconductor device having a fin-type semiconductor region

In a plasma doping device according to the invention, a vacuum chamber () is evacuated with a turbo-molecular pump () as an exhaust device via a exhaust portwhile a predetermined gas is being introduced from a gas supply device () in order to maintain the inside of the vacuum chamber () to a predetermined pressure with a pressure regulating valve (). A high-frequency power of 13.56 MHz is supplied by a high-frequency power source () to a coil () provided in the vicinity of a dielectric window () opposed to a sample electrode () to generate inductive-coupling plasma in the vacuum chamber (). A high-frequency power source () for supplying a high-frequency power to the sample electrode () is provided. Uniformity of processing is enhanced by driving a gate shutter () and covering a through gate ().

Plasma doping device with gate shutter

A semiconductor device includes: a fin-type semiconductor region () formed on a substrate (); a gate insulating film () formed so as to cover an upper surface and both side surfaces of a predetermined portion of the fin-type semiconductor region (); a gate electrode () formed on the gate insulating film (); and an impurity region () formed on both sides of the gate electrode () in the fin-type semiconductor region (). An impurity blocking portion () for blocking the introduction of impurities is provided adjacent both sides of the gate electrode () over an upper surface of the fin-type semiconductor region ().

Semiconductor device

A method for introducing impurities includes a step for forming an amorphous layer at a surface of a semiconductor substrate, and a step for forming a shallow impurity-introducing layer at the semiconductor substrate which has been made amorphous, and an apparatus used therefore. Particularly, the step for forming the amorphous layer is a step for irradiating plasma to the surface of the semiconductor substrate, and the step for forming the shallow impurity-introducing layer is a step for introducing impurities into the surface which has been made amorphous.

Method for introducing impurities and apparatus for introducing impurities

Plasma doping is performed using a plasma made of a gas containing an impurity which will serve as a dopant. In this case, at least one of plasma generation high-frequency power and biasing high-frequency power is supplied in the form of pulses.

Plasma doping method

An impurity is introduced into a fin-type semiconductor region () formed on a substrate () using a plasma doping process, thereby forming an impurity-introduced layer (). Carbon is introduced into the fin-type semiconductor region () using a plasma doping process to overlap at least a part of the impurity-introduced layer (), thereby forming a carbon-introduced layer.

Method for fabricating semiconductor device and plasma doping system

An impurity doping system is disclosed, which includes an impurity doping device for doping an impurity into a surface of a solid state base body, a measuring device for measuring an optical characteristic of an area into which the impurity is doped, and an annealing device for annealing the area into which the impurity is doped. The impurity doping system realizes an impurity doping not to bring about a rise of a substrate temperature, and measures optically physical properties of a lattice defect generated by the impurity doping step to control such that subsequent steps are optimized.

Growing community of inventors

Osaka, Japan

Yuichiro Sasaki