Tokyo Electron Limited

Asahi Kasei Kabushiki Kaisha

Biosensor Laboratories Co., Ltd.

Yuichiro Sakamoto

Akihiro Kikuchi

Takehiro Ueda

Kaoru Oohashi

Kimihiro Higuchi

Tadashi Gondai

Munehiro Shibuya

Satoshi Kayamori

Shinya Shima

Takashi Tsunoda

Kazuhiro Atsumi

Yumiko Kato

Katsu Honzawa

Tsuyoshi Hayakawa

Masayuki Masuko

Tomoyuki Taniguchi

Seiji Kawaguchi

Hisaya Motojima

Masaru Iriya

Shintaro Wakimura

Humihiko Shimomura

To provide a core material for a fiber reinforced composite having an excellent workability upon being composited with a fiber reinforcing material. A core material for a fiber reinforced composite of the present disclosure comprises a molded product of expanded beads containing a thermoplastic resin, and having a heat shrinkage onset temperature of 80&#xb0; C. or higher, a linear expansion coefficient of 10&#xd7;10mm/mm&#xb7;&#xb0; C. or less, and a ratio of change in dimensions with heating at 130&#xb0; C. of &#x2212;4.0% to 0%.

Core material for fiber reinforced composite and fiber reinforced composite having the same

An etching chamberincorporates a focus ringso as to surround a semiconductor wafer W provided on a lower electrode. The plasma processor is provided with an electric potential control DC power supplyto control the electric potential of this focus ring, and so constituted that the lower electrodeis supplied with a DC voltage of e.g., &#x2212;400 to &#x2212;600 V to control the electric potential of the focus ring. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.

Plasma processor and plasma processing method

An etching chamberincorporates a focus ringso as to surround a semiconductor wafer W provided on a lower electrode. The plasma processor is provided with an electric potential control DC power supplyto control the electric potential of this focus ring, and so constituted that the lower electrodeis supplied with a DC voltage of, e.g., &#x2212;400 to &#x2212;600 V to control the electric potential of the focus ring. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.

Plasma procesor and plasma processing method

A plasma etching method includes the step of: etching a silicon layer of a target object by using a plasma generated from a processing gas containing a fluorocarbon gas, a hydrofluorocarbon gas, a rare gas and an Ogas and by employing a patterned resist film as a mask. The target object includes the silicon layer whose main component is silicon and the patterned resist film formed over the silicon layer.

Plasma etching method, plasma processing apparatus, control program and computer readable storage medium

A difference in etching rate between the coated silicon based insulating film and any of other kinds of silicon-based insulating films is reduced by using nitrogen gas as a part of the etching gas. Therefore, the underlying film may not be exposed to the etching gas for a long time, so that degradation or deterioration of the underlying film can be prevented.

Etching method, program, computer readable storage medium and plasma processing apparatus

A wrap film comprising a layer of resin composition (C) as at least one surface layer, wherein resin composition (C) comprises 100 parts by mass of an aliphatic polyester resin (A) and 5 to 40 parts by mass of a liquid additive (B), and having a surface roughness of 0.5 to 4.0 nm, a tensile modulus of 400 to 1500 MPa, a heat resistant temperature of 130&#xb0; C. or more and cling energy of 0.5 to 2.5 mJ, and a wrap product having the wrap film placed in a box. There is provided an easy-to-use wrap film having cling property and pulling-out property.

Wrap film

The first branch 1a of the optical fiber 1 is connected to the light source 2, and the second branch 1b is connected to the optical measuring unit 3. A taper-shaped tip member 8 is fitted to a tip end of the optical fiber unit 1 with the use of a jig member 4. The inner hollow space 7 in the tip member 8 is connected with the air suction device 11, through the gap 5 formed between the optical fiber unit 1 and the jig member 4 and the air suction tube 10. The air suction device 11 discharges air from the inner hollow space 7 to suck liquid through the through-hole 6 into the inner hollow space. The air suction device 11 is controlled by the controller 12. Because the optical fiber unit can directly irradiate liquid with light, measurement can be performed with high sensitivity. The optical fiber unit is prevented from contamination.

A fiber optic device for measuring liquids which are drawn into an end

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Tokyo, Japan

Yuichiro Sakamoto