Other

Semiconductor Process Laboratory Co., Ltd.

Canon Sales Co., Inc.

Yuichiro Kotake

Kazuo Maeda

Hiroshi Ikakura

Yoshimi Shioya

Tomomi Suzuki

Kouichi Ohira

Youichi Yamamoto

Shoji Ohgawara

Makoto Kurotobi

A process gas consisting of one of N, NO or a mixture thereof is converted to a plasma and then a surface of a copper wiring layer is exposed to the plasma of the process gas, whereby a surface portion of the copper wiring layer is reformed and made into a copper diffusion preventing barrier. According to this method, a noble semiconductor device can be provided having increased operational speed and less copper diffusion.

Semiconductor device and method of manufacturing the same

The present invention relates to a semiconductor device in which an interlayer insulating film having a low dielectric constant is formed by covering wiring primarily made of a copper film, and to a method of manufacturing the same. In manufacturing the semiconductor device an insulating film having a low dielectric constant is formed on a substrate by converting a film-forming gas into a plasma for reaction. The method includes forming a low-pressure insulating film on the substrate by coverting the film-forming gas at a first gas pressure into a plasma and forming a high-pressure insulating film on the low-pressure insulating film by converting the film-forming gas at second gas pressure, higher than the first gas pressure, into a plasma and reaction.

The present invention discloses a film forming method for forming an insulating film having a low dielectric constant. This method comprises the steps of adding at least one diluting gas of an inert gas and a nitrogen gas (N ) to a major deposition gas component consisting of siloxane and N O, converting the resultant deposition gas into plasma, causing reaction in the plasma, and forming an insulating film or on a substrate targeted for film formation.

Film forming method, semiconductor device and manufacturing method of the same

There is provided the film forming method of forming the insulating film containing silicon on the substrate by plasmanizing the compound having the siloxane bonds and the oxidizing gas to react with each other.

Film forming method and semiconductor device

Disclosed is a method of fabricating a semiconductor device, in which an interlayer insulating film having a low dielectric constant is formed by coating a wiring, and either a via hole or a contact hole is formed in the interlayer insulating film. The method of fabricating a semiconductor device having the interlayer insulating film formed on the film-formed substrate with the exposed wiring , comprises the step of converting a silicon compound containing only the Si, O, C and H into a plasma gas as a film-forming gas to react the plasma gas, thus forming the block insulating film containing silicon (Si), oxygen (O), carbon (C) and hydrogen (H) between the wiring and the interlayer insulating film

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Tokyo, Japan

Yuichiro Kotake