Fujitsu Corporation

Other

Yuichiro Ito

Kunihiro Tanikawa

Kenji Awamoto

Yoshihiro Miyamoto

Nobuyuki Kajihara

Kazuya Kubo

Hisashi Yamaguchi

Kenji Arinaga

Keizo Kurahashi

Masaji Dohi

Gen Sudo

Koji Fujiwara

Soichiro Hikida

Tomoyuki Unotoro

Isao Tofuku

Mitsuo Ishii

A photodetector has a substrate made of a first semiconductor type and having a surface, and a plurality of independent diffusion regions formed in the surface of the substrate and made of a second semiconductor type which is opposite to the first semiconductor type so that a pn junction is formed between the substrate and each diffusion region. Discrete photosensitive areas are formed by each of the diffusion regions and blind areas are formed between adjacent ones of the photosensitive areas when a bias voltage is applied across each pn junction, where each of the photosensitive areas have the same area. At least predetermined ones of the diffusion regions have a main part and at least one auxiliary part which is electrically coupled to the main part, and the auxiliary part is provided in a region on the surface of the substrate towards a corresponding one of the blind areas relative to the main part, so that the blind area is reduced by a part of the photosensitive area formed by the auxiliary part of the diffusion region.

Infrared photodetector formed by array of semiconductor elements shaped

An image sensing device uses photodiodes arranged in a matrix. Each photodiode is connected to one of p serially-coupled input gate and transfer gate combinations, were p is an integer greater than or equal to 2. Channel terminals of the p transfer gates are commonly-coupled to a serially-coupled storage gate and output switch combination. The serially-coupled storage gate and output switch combination and its associated p input gate and transfer gate combinations can be repeatedly provided in rows and columns, and addressed so that pixels determined by the photodiodes can be serially output from the image sensing device. Among other advantages, by using serially-coupled input gate and transfer gate combinations, the area provided for a storage gate can be increased so that the sensitivity, dynamic range and/or signal-to-noise ratio is increased relative to conventional devices.

Two-dimensional image sensing device for having a storage gate for

A photoelectric transducer having a photocell includes a compound semiconductor substrate in which a photodiode is doped by an impurity of a conductivity type opposite to that of the substrate. An enclosure region is formed by the same doping impurity as the photodiode, surrounding but spaced apart from the photodiode. A gate electrode is formed on a portion of an insulation layer, the latter formed all over the substrate surface, which extends between the photodiode and the enclosure region. The enclosure region is selectively connected, via a contact hole through the insulation layer and a first switch to ground level. The gate electrode is connected via a second switch to a predetermined voltage having the same polarity as the conductivity type of the substrate. In a high-resolution mode, the first switch is closed and the second switch is open, so that the grounded enclosure region prevents carriers generated in the substrate, between the photodiode and the enclosure region, from flowing into an adjacent cell. In a high-sensitivity mode, the first switch is opened and the second switch is closed, so that the gate voltage generates a channel which electrically connects the photodiode to the enclosure region; thus, the carriers generated within the enclosure are all gathered to the photodiode. The first and second switches may be fabricated on a second semiconductor substrate, arranged parallel to but spaced from the compound semiconductor substrate and electrically connected thereto via bumps.

Photoelectric transducer switchable to a high-resolution or

A charge injection circuit for injecting a charge to a signal processing circuit has a photo-voltaic element for generating a photocurrent when an infrared light is received, a field effect transistor used for injecting the charge to the signal processing circuit, and an impedance conversion circuit for feeding back an output of the field effect transistor to a substrate potential of the photo-voltaic element. The impedance conversion circuit has a gain which is greater than zero and less than or equal to one.

Charge injection circuit having impedance conversion means

A matrix operation device performs matrix multiplication of an input electrical signal by utilizing a plurality of charge-coupled devices having split electrodes. The multiplication is carried out by the split electrodes of the charge-coupled devices. A signal to be transformed is sampled by a delay circuit in the input of the operation device. The sampled signal is supplied to the operation device in the form of a time series or sequence consisting of the sample signals. Each sample is multiplied by a corresponding coefficient. The split electrodes of the charge-coupled devices have weighting coefficients corresponding to coefficients in the matrix. The samples multiplied by the coefficients are added in the output of the operation device and provided as an output signal, corresponding to the development of the matrix multiplication.

Semiconductor matrix operation device

A new type flat panel display device has the structure combining a plurality of solid state display modules corresponding to character blocks. Each module is assembled using, as the basic element, a semiconductor substrate integrating circuit elements for driving and circuits for addressing, and moreover, it is provided with a memory element for a selection signal in view of making possible access to each module.

Display device

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Kawasaki, Japan

Yuichiro Ito