The Furukawa Electric Co., Ltd.

Yuichiro Irie

Junji Yoshida

Satoshi Irino

Taketsugu Sawamura

Hirokazu Itoh

Takeo Shimizu

Jun Miyokawa

Etsuji Katayama

Takeharu Yamaguchi

Kaoru Sekiguchi

Kiyokazu Tateno

Toshio Kimura

Shu Namiki

Masaki Funabashi

Yutaka Ohki

Osamu Aso

Shoichi Ozawa

Kazuyo Mizuno

Nobumasa Tanaka

Toshiaki Tsuda

Akira Mugino

Hideo Aoyagi

Hiroshi Kasahara

Shyoichi Ozawa

Ikuo Ohta

An optical semiconductor device outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The optical semiconductor device includes a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer. The optical semiconductor device further includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The optical semiconductor device is applied to a ridge-stripe type laser.

Wavelength-variable laser

An optical semiconductor device outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The optical semiconductor device includes a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer. The optical semiconductor device further includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The quantum well active layer is doped with 0.3 to 1&#xd7;10/cmof n-type impurity.

A distributed feedback (DFB) laser outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The DFB laser includes a separate confinement heterostructure layer positioned between the quantum well active layer and then-type cladding layer. The DFB laser includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and then-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The DFB laser has a function to select a specific wavelength by returning a specific wavelength in the wavelength-variable laser.

A wavelength-variable laser outputting a predetermined wavelength of laser light includes: a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction; a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer; and an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer.

An optical semiconductor device outputting a predetermined wavelength of laser light includes: a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction; a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer; and an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer.

Optical semiconductor device, semiconductor laser module, and optical fiber amplifier

A semiconductor laser diode module in which a laser diode and an optical fiber are optically coupled with each other efficiently irrespective of an ambient temperature change within the laser diode module. The laser diode module includes a laser diode, an optical system including an optical fiber and a lens portion, a holder configured to receive a portion of the optical system, a base having a holder mounting member and a fastening member, and a bottom plate configured to support the base. The holder is mounted to the fastening member at a first joint position, and the fastening member is mounted to the holder mounting member at a second joint position, where the first and second joint positions are located at substantially a same distance from the bottom plate. Alternatively, the first and second joint positions are coplanar with an active layer of the diode. Alternatively, the holder is mounted to the fastening member at a plurality of first joint positions, and the fastening member being mounted to the holder mounting member at a plurality of second joint positions, where the plurality of first and second joint positions are coplanar.

Semiconductor laser diode module

The present invention is related to a laser diode module and a fabricating method therefor, which facilitates the fabrication of the laser diode module in a short time with a low manufacturing cost and high long term reliability. The laser diode module is formed by optically aligning a lens formed fiber disposed within a ferrule to a laser diode element. Ferrule fixing parts are utilized to hold the ferrule in place and are secured in position using a YAG laser welding process.

Laser diode module and its manufacture method

A semiconductor laser diode module in which a laser diode and an optical fiber are optically coupled with each other efficiently irrespective of an ambient temperature change within the laser diode module. The laser diode module includes a laser diode, an optical system including an optical fiber and a lens portion, a base configured to support the laser diode and at least a portion of the optical system, and a bottom plate configured to support the laser diode, the optical system, and the base. The optical system is configured to receive and transmit a beam emitted from the laser diode through the lens portion to the optical fiber along an optical axis. The base includes a structural support member configured to prevent warping of the base, where the structural support member extends along the base in a direction generally parallel to the optical axis.

A laser diode module in which a laser diode and an optical fiber are optically coupled with each other efficiently irrespective of an ambient temperature change within the laser diode module. The laser diode module includes a laser diode, an optical system, an optical system mounting member supporting at least a portion of the optical system, a laser diode mounting member, and a bottom plate supporting the laser diode, the optical system, the optical system mounting member, and the laser diode mounting member. The optical system receives and transmits a beam emitted from the laser diode through a lens portion to an optical fiber. The optical system mounting member is attached to the laser diode mounting member. The laser diode module preferably includes a thermo module having a first plate member attached to the laser diode mounting member. The laser diode mounting member is preferably formed of material having an expansion coefficient in a range between an expansion coefficient of the optical system mounting member and an expansion coefficient of the first plate member.

The present invention provides a semiconductor laser module. A semiconductor laser module ( A) comprising a semiconductor laser element ( ) and an optical fiber ( ) optically coupled by an optical coupling means ( ) is provided, wherein on the optical fiber ( ), a reflective portion ( ) and a birefringence fiber ( ) are provided, the birefringence fiber ( ) is provided at least from the incident end on the side of the optical coupling means ( ) to immediately before the reflective portion ( ), a connection portion ( ) is provided at least at one point in the longitudinal direction of the birefringence fiber ( ), and in the connection portion ( ), two eigen axes of X axes and Y axes are connected so that the eigen axes intersect each other at an established angle &thgr;.

Semiconductor laser module

The present invention is related to a laser diode module and a fabricating method therefor, which facilitate the fabrication and enable fabrication in a short time with a low cost and high long-range reliability. With a lens formed fiber ( ) and a laser diode element (LD element) ( ) aligned with each other, the front side edge portion of the ferule near the LD element are fixedly sandwiched on the both sides thereof by means of a ferule supporting part ( ) to form a sandwiched portion ( ). By a fulcrum at sandwiched portion ( ), the rear side edge portion of the ferule ( ) is displaced to re-align the lens formed fiber ( ) with the LD element ( ). On the both sides for sandwiching the rear edge side of the ferule ( ), ferule fixing parts ( ) guided by means of a guide portion ( ) with a spacing interposed against the ferule ( ) are disposed with a spacing within a range of approximately 0 to 5 &mgr;m relative to a side surface of the ferule ( ). After the ferule fixing parts ( ) have been secured to the guide portion ( ), the ferule is fixedly YAG-welded to the ferule fixing parts ( ).

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Tokyo, Japan

Yuichiro Irie