Tokyo Electron Limited

Toyko Electron Limited

Yuichiro Inatomi

Takashi Tanaka

Mitsuaki Iwashita

Nobutaka Mizutani

Kazutoshi Iwai

Yusuke Saito

Taro Yamamoto

Koichi Yatsuda

Hideo Funakoshi

Takeshi Nagao

Tomohisa Hoshino

Yusaku Hashimoto

Gousuke Shiraishi

Takafumi Niwa

Masato Hamada

Keiichi Fujita

Tomonori Esaki

A substrate processing apparatusincludes a holder(A), a supplyand a cover body. The holder(A) is configured to attract and hold a substrate W. The supplyis configured to supply a heated plating liquid to the substrate W attracted to and held by the holder(A). The cover bodyis configured to cover the substrate W attracted to and held by the holder(A), and heat the plating liquid on the substrate W by using a heating deviceprovided in a ceiling memberthereof facing a top surface of the substrate W. The holder(A) includes protrusionsprojecting from a facing surfacethereof facing a bottom surface of the substrate W toward the bottom surface of the substrate W, and each protrusion has a protruding height equal to or larger than 1 mm.

Substrate processing apparatus and substrate processing method

A substrate liquid processing apparatus configured to supply a plating liquid to a substrate includes a substrate holder configured to hold the substrate; a plating liquid sending device configured to send the plating liquid to a first flow path; a temperature controller connected to the plating liquid sending device via the first flow path and configured to control a temperature of a fluid supplied through the first flow path; a fluid sending device configured to send a fluid different from the plating liquid to the first flow path; and a discharge device connected to the temperature controller and configured to discharge a fluid supplied from the temperature controller.

Substrate liquid processing apparatus for supplying temperature-controlled plating liquid

A substrate processing apparatus includes a substrate holder configured to horizontally hold and rotate a substrate which has a recess and a base metal layer exposed from a bottom surface of the recess; and a pre-cleaning liquid supply configured to supply a pre-cleaning liquid such as dicarboxylic acid or tricarboxylic acid onto the substrate being held and rotated by the substrate holder, to thereby pre-clean the base metal layer. A temperature of the pre-cleaning liquid on the substrate is equal to or higher than 40&#xb0; C.

Substrate liquid processing apparatus, substrate liquid processing method and recording medium

A plating apparatus, a plating method and a recording medium can allow a temperature of a wafer to be uniform within a surface thereof. A plating apparatusincludes a substrate holding unitconfigured to hold a substrate W; a plating liquid supply unitconfigured to supply a plating liquid Mto the substrate W; and a solvent supply unitconfigured to supply a solvent Nhaving a different temperature from a temperature of the plating liquid Mto the substrate W. The solvent Nis supplied to a preset position on the substrate W from the solvent supply unitafter the plating liquid Mis supplied to the substrate W from the plating liquid supply unit

Plating method and recording medium

A substrate W having a non-plateable material portionand a plateable material portionformed on a surface thereof is prepared, and then, a catalyst is selectively imparted to the plateable material portionby performing a catalyst imparting processing on the substrate W. Thereafter, a plating layeris selectively formed on the plateable material portionby supplying a plating liquid Monto the substrate W. The plating liquid Mcontains an inhibitor which suppresses the plating layerfrom being precipitated on the non-plateable material portion

Plating method, plating apparatus and recording medium

A substrate W having a non-plateable material portionand a plateable material portionformed on a surface thereof is prepared, and then, a catalyst is selectively imparted to the plateable material portionby performing a catalyst imparting processing on the substrate W. Thereafter, a plating layeris selectively formed on the plateable material portionby performing a plating processing on the substrate W. Before the imparting of the catalyst, an organic filmis formed on the substrate W by supplying an organic liquid Lonto the substrate W.

A catalyst is imparted selectively to a plateable material portionby performing a catalyst imparting processing on a substrate W having a non-plateable material portionand the plateable material portionformed on a surface thereof. Then, a hard mask layeris formed selectively on the plateable material portionby performing a plating processing on the substrate W. The non-plateable material portionis made of SiOas a main component, and the plateable material portionis made of a material including, as a main component, a material containing at least one of a OCHgroup and a NHgroup, a metal material containing Si as a main component, a material containing carbon as a main component or a catalyst metal material.

Forming method of hard mask

A substrate W having a non-plateable material portionand a plateable material portionformed on a surface thereof is prepared, and then, a catalyst is imparted selectively to the plateable material portionby supplying a catalyst solution Nonto the substrate W. Thereafter, a plating layeris selectively formed on the plateable material portionby supplying a plating liquid Monto the substrate W. A pH of the catalyst solution Nis previously adjusted such that the plating layeris suppressed from being precipitated on the non-plateable material portionwhile being facilitated to be precipitated on the plateable material portion

Plating apparatus, plating method, and recording medium

An adhesion layer formed of a thin film can be formed on a surface of a substrate. An adhesion layer forming method of forming the adhesion layer on the substrate includes supplying a coupling agent onto the substratewhile rotating the substrate. The substrateis rotated at a low speed equal to or less than 300 rpm and the coupling agent diluted with IPA is supplied onto the substrate

Adhesion layer forming method, adhesion layer forming system and recording medium

Forming method of hard mask, forming apparatus of hard mask and recording medium

Reliability of a plating process and reliability of a component manufactured through the plating process can be improved by suppressing peeling between plating layers formed by electroless plating. In a plating method, a plated component manufactured by the plating method, and a plating systemconfigured to manufacture the plated component by the plating method, a second electroless plating layer, which is made of a copper alloy and formed by the electroless plating, is formed on a surface of a first electroless plating layerformed by the electroless plating. The first electroless plating layeris a barrier layer configured to suppress diffusion of copper and is made of cobalt or a cobalt alloy. The second electroless plating layeris a seed layer for forming an electrolytic plating layer of copper on a surface thereof and is made of an alloy of copper and nickel.

Plating method, plated component, and plating system

A plating method can improve adhesivity with an underlying layer. The plating method of performing a plating process on a substrate includes forming a first plating layerserving as a barrier film on a substrate; baking the first plating layer; forming a second plating layerserving as a barrier film; and baking the second plating layer. A plating layer stacked bodyserving as a barrier film is formed of the first plating layerand the second plating layer

Plating method, plating system and storage medium

A catalyst adsorbed on a surface of a substrate is bound to the substrate without leaving residues within a recess of the substrate. A catalyst layer forming method includes forming a catalyst layerby supplying a catalyst solutiononto a substratehaving a recessto adsorb the catalystA onto a surface of the substrate and onto an inner surface of the recess; rinsing the surface of the substrateand an inside of the recessby supplying a rinse liquid; drying the surface of the substrateand the inside of the recess. Further, by supplying a binder solutioncontaining a binderB onto the substrate, the catalystA on the surface of the substrateis bound to the substrateby the binderB.

Catalyst layer forming method, catalyst layer forming system and recording medium

A Plating method includes a first plating process Sof supplying a first plating liquid to a substratehaving a recessand forming a first plating layer; and a second plating process of supplying a second plating liquid to the substrateand forming a second plating layeron the first plating layerafter the first plating process S. Here, a concentration of an additive contained in the first plating liquid is different from that in the second plating liquid. The first plating process Sincludes a process of forming the first plating layer of a discontinuous film or a particle shape on the substrateby rotating the substrateat a first speed and a process of rotating the substrateat a second speed and at a third speed repeatedly.

Growing community of inventors

Nirasaki, Japan

Yuichiro Inatomi