Ngk Insulators, Inc.

Other

Nissan Motor Company Limited

Honda Motor Co., Ltd.

Yuichiro Imanishi

Masakazu Kobayashi

Makoto Miyoshi

Kazuhiko Shinohara

Minoru Imaeda

Keiko Kushibiki

Kenji Furuya

Tetsuo Watanabe

Naohiro Shimizu

Katsuhiro Imai

Akihiko Honda

Kazuaki Yamaguchi

Nobuyuki Kokune

Shoji Sogo

Tetsuo Taniuchi

Yukio Miyairi

Fumio Abe

Shinichi Miwa

Tsuguo Fukuda

Takao Saito

Mitsuhiro Tanaka

Tomohiko Shibata

Takeshi Sakuma

Kazuo Tsubouchi

Minoru Matsui

Masao Takeuchi

Katsuji Iida

Wataru Shionoya

Masatsugu Oshima

Sozaburo Hotta

Shozo Ishii

Shuichi Tomabechi

Takumi Suetsugu

Michio Yokoyama

In a plasma treatment method, at least a surface of a target object is treated using a plasma treatment apparatus at least including a discharge electrode section configured to cause electric discharge based on supply of a high voltage pulse from a pulse power supply, by supplying fluid including nitrogen into the discharge electrode section to generate plasma by electric discharge in the discharge electrode section and applying resultant active species and the fluid to the target object. The flow rate of the fluid is in a range of 20 mm/s to 500 mm/s. Electrical energy per area of the discharge electrode section in the pulse power supply is 1.4&#xd7;10(J/cm) or more. The separation distance from the center of the discharge electrode section to the target object is in a range of 3 mm to 1700 mm.

Plasma treatment method

A first electrode, a second electrode and a third electrode are provided in a middle of a passage. The second electrode is provided on an upstream side of the first electrode, and the third electrode is provided on a downstream side of the first electrode. A connecting line connects the first electrode to a first pole of a pulsed power supply, and connects the second electrode and the third electrode to a second pole of the pulsed power supply. The first electrode crosses a first gas passing surface and occupies a part of the first gas passing surface. The second electrode and the third electrode cross a second gas passing surface and a third gas passing surface and occupy a part of the second gas passing surface and the third gas passing surface respectively.

Plasma treating apparatus

This invention concerns with the plasma inactivating method and processor that can inactivate the surface of the object without causing the degradation inside of it. The inactivation of toxins on the surface of the object proceeds as removing the toxins by nitriding or oxidizing the toxins by the following triple effects, the sharp pulsed electric field by the supply of the electric pulses, the generated N-radicals (N*) contained inside of the plasma in the surrounding gases composed mainly by Ngas under the low pressure.

Plasma processing methods for inactivating toxins

A silicon-based thin film depositing apparatus, including a plurality of transparent electrodes disposed to face corresponding counter electrodes with a space therebetween. Subsequently, while injecting a raw material gas from raw material gas injection orifices toward the supporting electrodes and also injecting a barrier gas from barrier gas injection orifices in the same direction as the direction in which the raw material gas is injected, the gases are discharged from a gas outlet, and thereby, the pressure in a chamber is controlled to a pressure of more than 1 kPa. Then, a DC pulse voltage is applied to each counter electrode to deposit a silicon-based thin film. A DC pulse voltage is applied to perform discharge. Therefore, even in a state where the distance between the electrodes is increased, plasma can be generated efficiently, and the in-plane distribution of film thickness can be improved.

Apparatus for depositing silicon-based thin film and method for depositing silicon-based thin film

A silicon-based thin film mass-producing apparatus, including transparent electrodes placed to face in parallel to corresponding counter electrodes with a space therebetween, and silicon-based thin films are deposited on the transparent electrodes by feeding a raw material gas for depositing the silicon-based thin films into the chamber and by applying a DC pulse voltage to the counter electrodes to generate plasma. Unlike methods in which a radio frequency voltage is intermittently applied to perform discharge, a high plasma density distribution does not occur, and in-plane film thickness distribution does not occur. Furthermore, since the DC pulse voltage rises sharply, the ON period can be shortened. As a result, generation of a sheath ceases in the transient state before reaching the steady state, and the thickness of the sheath is small, which allows the space between the counter and transparent electrodes to decrease.

Apparatus for mass-producing silicon-based thin film and method for mass-producing silicon-based thin film

In the plasma reaction vessel () of the invention, two or more laminate-structures () having ceramic formed bodies () in which a plasma generating electrode () capable of generating plasma is formed in two-tape-form, and an electrically continuous film-like electrically conductive electrode () held between the two ceramic formed bodies () are formed in such a manner as to form a plasma generating space () containing mutual laminate planes therein. Of the electrically conductive electrodes (), adjacent ones are capable of having electric discharge produced therebetween so as to generate the plasma in the plasma generating space () and of generating uniform stabilized plasma at low electric power, it being possible to reduce a passage resistance to a gas passing therein.

Plasma reaction vessel, and method of producing the same

An apparatus for treating harmful substances contained in a waste gas discharged from waste burning pants includes an insulating honeycomb structural body made of ceramics containing a photocatalytic material, a number of through holes formed in the honeycomb structural body in parallel with each other, first and second mesh electrodes arranged on respective end surfaces of the honeycomb structural body, and a pulse supply source connected across the first and second mesh electrodes. A waste gas flows through the through holes formed in the honeycomb structural body, while pulse corona discharge plasma is uniformly generated along the through holes. Harmful substances contained in the waste gas are decomposed by the high energy electrons and radicals generated by the discharge plasma, and the photocatalytic material is excited by ultraviolet radiation emitted from the discharge plasma to produce active oxygen which decomposes and/or oxidizes the harmful substances.

Method of treating substance and apparatus for carrying out the same

A semiconductor device constructed as a reverse conducting static induction thyristor including a thyristor section formed by an n silicon substrate , p gate regions formed in one surface of the substrate, a p anode region formed in the other surface of the substrate, a main diode section having a cathode region formed by the silicon substrate and an anode region formed in the one surface of the substrate, and a series arrangement of diodes including plural p anode regions , plural n cathode contact regions formed in the first surface of the substrate, and plural conductive layers connecting these anode regions and cathode contact legions successively. An anode and a cathode of the series arrangement of diodes are connected to a cathode electrode and an anode electrode of the thyristor section. Each of diodes in the series arrangement has a breakdown voltage lower than that of the thyristor section.

Semiconductor device with reverse conducting faculty

A thermoelectric conversion module having a large capacity and a curved surface which can be secured to a corresponding curved surface of a base member is manufactured by inserting N type and P type semiconductor strips into through holes formed in a honeycomb structural body, filling spaces between walls defining the through holes and the semiconductor strips with an electrically insulating filler members made of an easily deformable material such as polyimide resin and silicone resin, cutting the honeycomb structural body into a plurality of thermoelectric conversion module main bodies each having a desired surface configuration, and providing metal electrodes on both surfaces of a thermoelectric conversion module main body such that alternate N type and P type semiconductor elements are connected in cascade.

Thermoelectric conversion module and method of manufacturing the same

A surface acoustic wave device including a substrate and an electrode structure formed on the substrate, said substrate being made of an X-cut Langasite single crystal, a rotation Y-cut Langasite single crystal or a double rotation Y-cut Langasite single crystal. When the X-cut Langasite crystal having a large reflection coefficient is used, the electrode structure is formed to constitute a surface acoustic wave resonator. When the rotation Y-cut Langasite crystal having a large electro-mechanical coupling coefficient and a small reflection coefficient is used, the electrode structure is formed to constitute a surface acoustic wave filter. When the double rotation Y-cut Langasite crystal having an NSPUDT property is used, the electrode structure is formed to constitute a surface acoustic wave filter having a low insertion loss and an excellent phase property.

Surface acoustic wave device comprising langasite single crystal substrate

A p-type thermoelectric converting substance used as a p-type semiconductor in a thermoelectric converting module consisting essentially of a substance expressed by a chemical formula CoSb,Sn,or CoSb,Ge,(2.7<x<3.4, 0<y<0.4, x&plus;y>3), and containing a small amount of oxygen z defined by 2(x&plus;y&minus;3)&gE;z. The amount of oxygen z is preferably limited such that it is not higher than 0.1 molecules per 1 molecule of Co. An alloy ingot consisting essentially of CoSb,Sn,or CoSb,Ge,(2.7<x<3.4, 0<y<0.4, x&plus;y>3) is ground to obtain a raw material powder. Then, the powder is cast into a mold, and the mold is sintered under a non-oxidizing or reducing atmosphere. The thus obtained substance reveals p-conductivity in a stable manner over a wide temperature range, and has excellent thermoelectric converting properties.

P-type thermoelectric converting substance and method of manufacturing the same

An output side electrode of a surface acoustic wave matched filter with portions having different delay times between taps. The output side electrode may be provided by arranging parallelly a plurality of output side electrodes having different scales, different tap distances, or by forming output side electrodes in an inclined fashion or in a dog-leg shape viewed in a direction of an aperture length, or by arranging, between electrode fingers, thin films having different dimensions or thicknesses viewed in the direction of the aperture length, or by forming, between electrode fingers, recessed portions having different dimension or depth viewed in the direction of the aperture length. In the surface acoustic wave matched filter for use in a spread spectrum communication, it is possible to prevent a decrease in a correlation caused by a variation in a propagating velocity of a surface acoustic wave due to a temperature characteristic as well as by fluctuations in the propagating velocity for respective substrates or within a single substrate.

Surface acoustic wave matched filter

A process for growing a crystalline silicon plate, including the steps of arranging a planar growth member and a growth crucible in which a melt of silicon is placed and which is provided with a melt draw-out opening at a lower side thereof, while at least a tip portion of the growth member is located under the draw-out opening, drawing out the melt from the crucible through the draw-out opening, bringing the drawn out melt into contact with the tip portion of the growth member, and further pulling down the melt through the tip portion of the growth member.

Process and apparatus for growing crystalline silicon plates by pulling the plate through a growth member

Process and apparatus for growing crystalline silicon plates by pulling

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Nagoya, Japan

Yuichiro Imanishi