Fuji Electric Co., Ltd.

Yuichiro Hinata

Naoyuki Kanai

Tatsuo Nishizawa

Yoshinari Ikeda

Ryoichi Kato

Motohito Hori

Takafumi Yamada

Takahiro Koyama

Norihiro Nashida

Yuma Murata

Narumi Sato

Yuta Tamai

Yoko Nakamura

Toshiyuki Miyasaka

Yushi Sato

Daiki Yoshida

Yoshihiro Tateishi

Toshiyuki Miyanagi

Ryotaro Tsuruoka

Norihiro Daicho

A semiconductor device including: a semiconductor chip; a plurality of insulating substrates mounted with the semiconductor chip; a printed circuit board facing the plurality of insulating substrates; and a conductive member for electrically connecting the plurality of insulating substrates and the printed circuit board is provided. The printed circuit board has a first through part arranged between the plurality of insulating substrates being adjacent to each other in a top view, and a second through part different from the first through part in shape in the top view.

Semiconductor device having through parts of different shapes

A semiconductor device includes a semiconductor chip, an insulated circuit board including a metal plate, an insulating plate and a circuit pattern, each of which has a rectangular shape, and a spacer part disposed on the periphery of a rear surface of the metal plate including at least one of the four corners thereof. The spacer part protrudes from a rear surface of the metal plate in the thickness direction away from a front surface of the insulated circuit board.

Semiconductor device and method for manufacturing the same

A semiconductor module includes a resin case housing a semiconductor element; an insulating layer extending outward from the resin case; and a first external connection terminal extending outward from the resin case, arranged above the insulating layer so as to face the insulting layer, the first external connection terminal having a non-contact portion that is not in contact with the insulating layer in a thickness direction of the insulating layer at a position overlapping the insulating layer in a plan view.

Semiconductor module comprising a resin case and an external connection terminal

A power semiconductor module includes an insulating circuit substrate; a printed circuit board disposed over the insulating circuit substrate; and a plurality of terminals each having a rod-shaped portion and including a first protrusion and a second protrusion each protruding laterally form a side face of the rod-shaped portion; wherein at least one of the plurality of terminals is inserted to one of the through-holes of the printed circuit board and is locked to the one of the through-holes via the first protrusion, and wherein at least another one of the plurality of terminals is inserted to another one of the through-holes of the printed circuit board and is locked to said another one of the through-holes via the second protrusion, and an end of the at least another one of the plurality of terminals is electrically connected to a conductive plate on the insulating circuit substrate.

Power semiconductor module

A semiconductor module is provided with: a case having a frame that surrounds a substrate and a terminal block formed extending inward from an inner wall surface of the frame; a terminal having one end extending outward from the frame, and another end extending inward from the frame and being secured to a top face of the terminal block; a wiring member that electrically connects the terminal and a semiconductor element on the substrate; and an encapsulating resin that encapsulates the other end of the terminal, the wiring member, and the semiconductor element inside the case. A hole is formed in the top face of the terminal block. The hole is filled with the encapsulating resin, and is positioned closer to the inner wall surface of the frame than a bonding part between the terminal and the wiring member.

Semiconductor module

Provided are a semiconductor module capable of easily connecting extraction pin with a wiring board and having reliable connections, and a method for manufacturing the same. A semiconductor module includes: a multilayer board having a semiconductor device mounted thereon, the multilayer board electrically connecting to the semiconductor device; an extraction pin electrically connecting to one of the semiconductor device and the multilayer board; and a wiring board bonded to the extraction pin for electrical connection. The extraction pin has a press-fit. The wiring board has a hole portion bonded with the press-fit of the extraction pin. The base materials of the press-fit of the extraction pin and the hole portion of the wiring board are copper (Cu). A bonded portion between the base materials of press-fit and the corresponding hole portion of the wiring board includes a CuSnNi alloy layer.

Semiconductor module and method for manufacturing the same

A semiconductor device, including a first board, a second board having a plurality of through holes passing therethrough, and a plurality of external terminals that are respectively press-fitted into the plurality of through holes of the second board, one end portion of each external terminal passing through the corresponding through hole and being fixed to a front surface of the first board. The second board is a printed circuit board that further includes, in a top view thereof, a plurality of support regions, each having one of the plurality of through holes formed therein, and a plurality of buffer regions respectively surrounding the plurality of support regions, each buffer region having at least one buffer hole and at least one torsion portion formed therein, the at least one torsion portion being connected to the support region surrounded by each buffer region.

Semiconductor device having buffer structure for external terminals

A semiconductor device includes an insulated circuit board having conductor layers arranged away from each other and bonding materials each provided on the conductor layers; a wiring board having an opposing surface facing the conductor layers and through holes each corresponding to a position of each bonding material; hollow members each having a cylindrical portion and a flanged portion at one end of the cylindrical portion and having a cavity in common with the cylindrical portion, ok cylindrical portions press-fitted into the through holes, and other ends of the cylindrical portions bonded to the conductor layers by the bonding materials; and external connection terminals each inserted into the cavity of each hollow member and bonded to the conductor layers. Each cylindrical portion is inserted into each through hole such that each flanged portion contacts with an upper surface opposed to the opposing surface of the wiring board.

A semiconductor device includes: an insulation circuit substrate including a metal layer and an insulation substrate, the metal layer being formed on one surface of the insulation substrate, a connecting member having a cylindrical shape joined to the metal layer via a bonding material, a terminal pin inserted in the connecting member, and a reinforcement member having a cylindrical shape disposed on an outer periphery of the connecting member. The reinforcement member is made of a material having a hardness greater than that of the connecting member.

Semiconductor device having terminal pin connected by connecting member and method of manufacturing semiconductor device

A semiconductor apparatusincludes a circuit substratehaving a circuit pattern layeron an upper principal surface, semiconductor elementsandmounted on the circuit pattern layerof the circuit substrate, a printed substratearranged apart from the circuit substrateon the upper principal surface side of the circuit substrate, a housingmold-sealing the upper principal surface side of the circuit substrate, and a blockprovided sandwiching at least part of the housingand being opposite to the circuit substrate, the block having a linear expansion coefficient smaller than that of the housing

Semiconductor apparatus and manufacturing method of semiconductor apparatus

A semiconductor device includes: an insulating substrate including an insulating plate and a circuit board on the insulating plate; a semiconductor chip having an electrode on a front surface thereof, a back of the semiconductor chip being fixed to the circuit board; a printed circuit board that faces the circuit board and the front surface of the semiconductor chip; and one or more conductive posts each having one end connected via solder to the circuit board or to the electrode on the semiconductor chip, another end connected to the printed circuit board, and one or more grooves that extend from said one end of the conductive post that contacts the solder to said another end of the conductive post connected to the printed circuit board.

Semiconductor device

Provided is a semiconductor device including an insulating plate; a first conducting portion formed on a first surface of the insulating plate; a semiconductor element mounted on the first conducting portion; and a mold material that seals the first conducting portion and the semiconductor element on the first surface side of the insulating plate. A material of the insulating plate has higher adhesion with respect to the mold material than a material of the first conducting portion, and the first conducting portion includes a gap that is filled with the mold material between the first conducting portion and the insulating plate in a portion thereof.

Semiconductor device and semiconductor device manufacturing method

A temperature of a semiconductor element is measured based on a temperature coefficient of a voltage between the first electrode and the second electrode when no heat is generated when causing a constant current of an extent such that the semiconductor element does not generate heat to be input wherein current is caused to flow from a third electrode to a second electrode in accordance with voltage applied between a first electrode and the second electrode. Also, a constant current such that the semiconductor element generates heat is input into the third electrode, with voltage applied between the first electrode and second electrode of the semiconductor element kept constant, and power is measured based on the current such that the semiconductor element generates heat and on voltage when heat is generated between the third electrode and second electrode when the semiconductor element generates heat.

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Matsumoto, Japan

Yuichiro Hinata