Renesas Electronics Corporation

Yuichi Yato

Hiroi Oka

Hiroyuki Nakamura

Yukihiro Sato

Takuya Nakajo

Tomoaki Uno

Tadatoshi Danno

Atsushi Nishikizawa

Katsuhiko Funatsu

Keita Takada

Noriko Okunishi

Toshiyuki Hata

Ryoichi Kajiwara

Kazunori Hasegawa

Kazutoshi Itou

Hiroya Shimoyama

A semiconductor device includes: a semiconductor chip including a field effect transistor for switching; a die pad on which the semiconductor chip is mounted via a first bonding material; a lead electrically connected to a pad for source of the semiconductor chip through a metal plate; a lead coupling portion formed integrally with the lead; and a sealing portion for sealing them. A back surface electrode for drain of the semiconductor chip and the die pad are bonded via the first bonding material, the metal plate and the pad for source of the semiconductor chip are bonded via a second bonding material, and the metal plate and the lead coupling portion are bonded via a third bonding material. The first, second, and third bonding materials have conductivity, and an elastic modulus of each of the first and second bonding materials is lower than that of the third bonding material.

Semiconductor device

An improvement is achieved in the performance of a semiconductor device. A second component mounting portion over which a first electronic component is mounted is connected to a coupling portion of a lead frame via a suspension lead. The suspension lead has a first portion between the second component mounting portion and the coupling portion and a second portion between the first portion and the coupling portion. The second portion has a third portion connected to the first portion and having a width smaller than a width of the first portion, a fourth portion connected to the first portion and having a width smaller than the width of the first portion, and a through hole (opening) located between the third and fourth portions. Each of the first, third, and fourth portions has the same thickness. After a sealing body is formed, a cutting jig is pressed against the suspension lead to cut the suspension lead.

Method of manufacturing semiconductor device and semiconductor device

In a resin sealing type semiconductor device, a semiconductor chip CPis mounted over a die pad DP having conductivity via a bonding member BDhaving insulation property, and a semiconductor chip CPis mounted over the die pad DP via a bonding member BDhaving conductivity. A first length of a portion, in a first side formed by an intersection of a first side surface and a second side surface of the semiconductor chip CP, covered with the bonding member BDis larger than a second length of a portion, in a second side formed by an intersection of a third side surface and a fourth side surface of the semiconductor chip CP, covered with the bonding member BD

Semiconductor device and method of manufacturing the same

A semiconductor device according to an embodiment is a semiconductor device in which a semiconductor chip mounted on a chip mounting part is sealed by resin and a first member is fixed to a chip mounting surface side between a peripheral portion of the semiconductor chip and a peripheral portion of the chip mounting part. Also, the first member is sealed by the resin. Also, a length of the first part of the chip mounting part in the first direction is larger than a length of the semiconductor chip in the first direction, in a plan view.

A semiconductor device includes a first chip mounting portion, a first semiconductor chip arranged over the first chip mounting portion, a first pad formed in a surface of the first semiconductor chip, a first lead which serves as an external coupling terminal, a first conductive member which electrically couples the first pad and the first lead, and a sealing body which seals a part of the first chip mounting portion, the first semiconductor chip, a part of the first lead, and the first conductive member. The first conductive member includes a first plate-like portion, and a first support portion formed integrally with the first plate-like portion. An end of the first support portion is exposed from the sealing body, and the first support portion is formed with a first bent portion.

A die bonding portion is metallically bonded by well-conductive Cu metal powders with a maximum particle diameter of about 15 &#x3bc;m to 200 &#x3bc;m and adhesive layers of Ag, and minute holes are evenly dispersed in a joint layer. With this structure, the reflow resistance of about 260&#xb0; C. and reliability under thermal cycle test can be ensured without using lead.

Semiconductor apparatus, manufacturing method of semiconductor apparatus, and joint material

The present invention enables improvement of bonding reliability of the conductive adhesive interposed between a semiconductor chip and a die pad portion. Provided is a semiconductor device, in which a silicon chip is mounted over the die pad portion integrally formed with a drain lead, has a source pad over the main surface and a drain electrode of a power MOSFET over the back side, and is bonded onto the die pad portion via an Ag paste. In the device, a source lead and the source pad are electrically coupled via an Al ribbon. Over the back surface of the silicon chip, an Ag nanoparticle coated film is formed, while another Ag nanoparticle coated film is formed over the die pad portion and lead (drain lead and source lead).

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Tokyo, Japan

Yuichi Yato