Toyoda Gosei Co., Ltd.

Yuichi Yano

Masakata Koseki

Hiroyuki Tajima

Yuhki Ito

Makoto Sato

Takeshi Matsushima

Akio Namiki

Tomoko Suzuki

A emitting device includes: an LED chip mounted on a substrate; and a sealing layer that encloses the LED chip, wherein: the sealing layer is a single layer having a thickness of from 0.1 mm to 1.0 mm and a maximum width of from 6.0 mm to 20 mm; and the sealing layer is composed of a methylsilicone composition and the mole percentage (mol %) X of Si&#x2014;CHin the methylsilicone composition is more than 90 and less than 100.

Light emitting device and sealing layer for the light emitting device

The present invention provides a light emitting device, which includes a light emitting diode (LED) chip, a case formed of polycyclohexylene dimethylene terephthalate, and a sealant that is charged into the case to seal the LED chip. In the light emitting device, a stabilizer having a melting point that is higher than a junction temperature of the LED chip by 80&#xb0; C. or more exists at a boundary surface between an inner wall surface of the case and the sealant or within 300 &#x3bc;m of the boundary surface.

Light-emitting device including case and sealant

A light-emitting device includes a light-emitting element, and a sealing material for sealing the light-emitting element. The sealing material includes a first layer including a radical polymerizable resin and a second layer including a non-radical polymerizable resin, the first layer being in contact with the light-emitting element and the second layer covering an upper surface of the first layer.

Light-emitting device

A light-emitting device includes a light-emitting element mounted on a lead frame, and a sealing material sealing the light-emitting element and having a thickness of not more than 1 mm and including a silicone resin as a main component. The sealing material includes a first gas barrier layer that a physical property value obtained by dividing a difference between a value of an average spin-spin relaxation time ofH nuclei at a resonance frequency of 25 MHz at 140&#xb0; C. and that at 25&#xb0; C. by 115 is not more than 3.5 and the average spin-spin relaxation time at 140&#xb0; C. is not more than 500 &#x3bc;sec.

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Kiyosu, Japan

Yuichi Yano