Semiconductor Energy Laboratory Co., Ltd.

Yuichi Yanagisawa

Hisao Ikeda

Nozomu Sugisawa

Kensuke Yoshizumi

Kei Takahashi

Shunpei Yamazaki

Takuya Kawata

Naoyuki Senda

Natsuko Takase

Daisuke Matsubayashi

Daiki Nakamura

Hitoshi Kunitake

Kazuki Tsuda

Masahiro Takahashi

Norifumi Takesue

Shota Mizukami

Kiyoshi Kato

Takayuki Ikeda

Satoru Okamoto

Yasumasa Yamane

Ryota Hodo

Tsutomu Murakawa

Haruyuki Baba

Hiromi Sawai

Masao Kasuga

A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes an insulator including an excess-oxygen region, a metal oxide over the insulator, a first oxide semiconductor over the metal oxide, a first conductor in contact with the first oxide semiconductor, a second conductor in contact with the first oxide semiconductor, and a second oxide semiconductor in contact with the first oxide semiconductor and the insulator. The metal oxide contains an element having lower Gibbs energy of formation in an Ellingham diagram than a metal element contained in the first oxide semiconductor, and a region where the first oxide semiconductor and the second oxide semiconductor are in contact with each other is positioned between the first conductor and the second conductor.

Semiconductor device

A semiconductor device with favorable electrical characteristics is provided. The semiconductor device includes a first insulator, a first oxide over the first insulator, a second insulator provided between the first insulator and the first oxide, a second oxide in contact with the first insulator and in contact with a side surface of the first oxide, and a third insulator over the first insulator, the second oxide, and the first oxide. The third insulator includes a region in contact with a top surface of the first oxide. The second insulator and the third insulator include a material which is less likely to pass oxygen than the second oxide.

Semiconductor device comprising oxygen blocking films

Provided is a display device or a display system capable of displaying images along a curved surface, a display device or a display system capable of displaying images seamlessly in the form of a ring, or a display device or a display system that is suitable for increasing in size. The display device includes a display panel. The display panel includes a first part and a second part and is flexible. The first part can display images. The second part can transmit visible light. The display panel is curved so that the second part and the first part overlap with each other.

Display device, display unit, and display system

A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first oxide, an insulator over the first oxide, a first conductor over the insulator, a second conductor electrically connected to the first oxide, and a second oxide provided between the first oxide and the second conductor, and the contact area between the second oxide and the second conductor is larger than the contact area between the second oxide and the first oxide.

Semiconductor device and method for manufacturing semiconductor device

A display device or an electronic device with high portability and browsability is provided. A display device which includes two display panels that overlap with each other and in which the area of a portion where the two display panels overlap with each other is variable is provided. The larger the area where the two display panels overlap with each other is, the smaller the display device becomes. The first display panel includes a first region that performs display. The second display panel includes a second region that performs display, and a third region that is adjacent to the second region and transmits visible light. When the third region overlaps with the side of a surface which performs display of the first region, display can be performed using a seamless large display region.

Display device and electronic device

A semiconductor device is provided in which power consumption is reduced and an increase in circuit area is inhibited. The semiconductor device includes a high frequency amplifier circuit, an envelope detection circuit, and a power supply circuit. The power supply circuit has a function of supplying a power supply potential to the high frequency amplifier circuit, an output of the high frequency amplifier circuit is connected to the envelope detection circuit, and an output of the envelope detection circuit is connected to the power supply circuit. The power supply circuit can reduce the power consumption by changing the power supply potential in accordance with the output of the high frequency amplifier circuit. The use of an OS transistor in the envelope detection circuit can inhibit an increase in circuit area.

Semiconductor device including high frequency amplifier circuit, electronic component, and electronic device

A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first insulator; a first oxide over the first insulator; a second oxide over the first oxide; a first conductor, a second conductor, a third oxide, a fourth oxide, and a second insulator over the second oxide; a third insulator over the first conductor, the second conductor, the third oxide, and the fourth oxide; a fourth insulator over the second insulator; and a third conductor over the fourth insulator. The second insulator is positioned between the first conductor and the second conductor. The third oxide is positioned between the first conductor and the second insulator. The fourth oxide is positioned between the second conductor and the second insulator. The thickness of the third oxide between the first conductor and the second insulator is greater than or equal to 3 nm and less than or equal to 8 nm. The thickness of the fourth oxide between the second conductor and the second insulator is greater than or equal to 3 nm and less than or equal to 8 nm.

A semiconductor device having favorable electrical characteristics is provided. The semiconductor device in which first to third conductors are placed over a first oxide; first and second oxide insulators are placed respectively over the second and third conductors; a second oxide is placed in contact with a side surface of the first oxide insulator, a side surface of the second oxide insulator, and a top surface of the first oxide; a first insulator is placed between the first conductor and the second oxide; and the first oxide insulator and the second oxide insulator are not in contact with the first to third conductors, the first insulator, and the first oxide.

A semiconductor device with high productivity is provided. The semiconductor device includes a first and a second transistor and a first and a second capacitor. The first and the second transistor include gate electrodes and back gate electrodes. The second transistor is provided in a layer above the first transistor, and the second capacitor is provided in a layer above the first capacitor. One electrode of the first capacitor is electrically connected to one of a source electrode and a drain electrode of the first transistor and electrically connected to one of a source electrode and a drain electrode of the second transistor. The other electrode of the first capacitor is formed in the same layer as the back gate electrode of the second transistor.

Semiconductor device including transistor and capacitor

A highly reliable display device. A first flexible substrate and a second flexible substrate overlap each other with a display element positioned therebetween. Side surfaces of at least one of the first substrate and the second substrate which overlap each other are covered with a high molecular material having a light-transmitting property. The high molecular material is more flexible than the first substrate and the second substrate.

A display device that can display an image along a curved surface is provided. In the display device, a first display panel and a second display panel overlap each other with a light-transmitting layer provided therebetween. The light-transmitting layer is positioned on a display surface side of the first display panel, and on a side opposite to the display surface of the second display panel. The light-transmitting layer has an average transmittance of 80% or more with respect to light in the wavelength range of 450 nm to 700 nm and a refractive index higher than that of air. A display region of the first display panel overlaps a region transmitting visible light of the second display panel with the light-transmitting layer provided therebetween. It is preferred that the display region of the first display panel not overlap with a region blocking visible light of the second display panel.

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Kanagawa, Japan

Yuichi Yanagisawa