Applied Materials, Inc.

Applied Material, Inc.

Yuichi Wada

Yueh Sheng Ow

Ananthkrishna Jupudi

Sarath Babu

Junqi Wei

Kang Zhang

Kelvin Boh

Naomi Yoshida

Hiroyuki Yarita

Hisashi Aida

Tuck Foong Koh

Clinton Goh

Francisco A Leon

Sree Rangasai V Kesapragada

Nuno Yen-Chu Chen

Felix Deng

Lawrence Camest West

Gregory L Wojcik

Preetham P Rao

Vinodh Ramachandran

Kai Liang Liew

Kok Wei Tan

Kok Seong Teo

Kelvin Tai Ming Boh

Stephen Moffatt

Liubo Hong

Cheng-Hsiung Matt Tsai

Glen T Mori

Jacob Newman

Siew Kit Hoi

Ribhu Gautam

Xinxin Wang

Yoichiro Tanaka

Yaoying Zhong

Chien-Kang Hsiung

Chul Nyoung Lee

Zheng Min Clarence Chong

Hisashl Aida

Kihwan Yoon

Zhang Kang

Embodiments of the disclosure include a substrate support including a metal body with a substrate face, a plurality of lift pin holes formed in the body, and a dielectric coating disposed on the substrate face of the body. Each of the plurality lift pin holes includes a through hole and a chamfer face configured to mate with a lift pin sleeve. The dielectric coating includes a substrate supporting surface, a thickness, and a pattern disposed in the substrate supporting surface.

Spray-coated electrostatic chuck design

Describes are shutter disks comprising one or more of titanium (Ti), barium (Ba), or cerium (Ce) for physical vapor deposition (PVD) that allows pasting to minimize outgassing and control defects during etching of a substrate. The shutter disks incorporate getter materials that are highly selective to reactive gas molecules, including O, CO, CO, and water.

Shutter disk

Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a process kit for use in a process chamber includes a tubular body having a central opening configured to surround a substrate support, wherein sidewalls of the tubular body do not include any through holes; and a top plate coupled to an upper end of the tubular body and substantially covering the central opening, wherein the top plate has a gas inlet and has a diameter that is greater than an outer diameter of the tubular body, and wherein the tubular body extends straight down from the top plate.

High conductance inner shield for process chamber

Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a process kit for use in a process chamber, includes: a top plate having a central recess disposed in an upper surface thereof; a channel extending from an outer portion of the top plate to the central recess; a plurality of holes disposed through the top plate from a bottom surface of the recess to a lower surface of the top plate; a cover plate configured to be coupled to the top plate and to form a seal along a periphery of the central recess such that the covered recess forms a plenum within the top plate; and a tubular body extending down from the lower surface of the top plate and surrounding the plurality of holes, the tubular body further configured to surround a substrate support.

Preclean chamber upper shield with showerhead

Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate can includes selectively etching from a substrate disposed in the PVD chamber an exposed first layer of material, covering an underlying second layer of material, and adjacent to an exposed third layer of material, using both process gas ions and metal ions formed from a target of the PVD chamber, in an amount sufficient to expose the second layer of material while simultaneously depositing a layer of metal onto the third layer of material; and subsequently depositing metal from the target onto the second layer of material.

Methods and apparatus for processing a substrate

Apparatus and methods use a unique process kit to protect a processing volume of a process chamber. The process kit includes a shield with a frame configured to be insertable into a shield and a foil liner composed of a metallic material that is attachable to the frame at specific points. The specific attachment points are spaced apart to produce an amount of flexibility based on a malleability of the metallic material. The amount of flexibility ranges from approximately 2.5 to approximately 4.5.

Methods and apparatus for reducing defects in preclean chambers

Methods and apparatus for a substrate processing chamber are provided herein. In some embodiments, a substrate processing chamber includes a chamber body having sidewalls defining an interior volume having a polygon shape; a selectively sealable elongated opening disposed in an upper portion of the chamber body for transferring one or more substrates into or out of the chamber body; a funnel disposed at a first end of the chamber body, wherein the funnel increases in size along a direction from an outer surface of the chamber body to the interior volume; and a pump port disposed at a second end of the chamber body opposite the funnel.

Inline microwave batch degas chamber

Methods and apparatus for cleaving a substrate in a semiconductor chamber. The semiconductor chamber pressure is adjusted to a process pressure, a substrate is then heated to a nucleation temperature of ions implanted in the substrate, the temperature of the substrate is then adjusted below the nucleation temperature of the ions, and the temperature is maintained until cleaving of the substrate occurs. Microwaves may be used to provide heating of the substrate for the processes. A cleaving sensor may be used for detection of successful cleaving by detecting pressure changes, acoustic emissions, changes within the substrate, and/or residual gases given off by the implanted ions when the cleaving occurs.

Methods and apparatus for cleaving of semiconductor substrates

Methods and apparatus for processing a substrate are provided herein. For example, the method can include depositing a first layer of metal on a first substrate; depositing a second layer of metal atop the first layer of metal; depositing a third layer of metal on a second substrate; depositing a fourth layer of metal atop the third layer of metal; and bringing the second layer of material into contact with the fourth layer of material under conditions sufficient to cause the first substrate to be bonded to the second substrate by a diffusion layer formed by portions of the first layer of metal diffusing through the second layer of metal and portions of the third layer of metal diffusing through the fourth layer of metal.

Methods and apparatus for protecting parts of a process chamber from thermal cycling effects of deposited materials. In some embodiments, a method of protecting the part of the process chamber includes wet etching the part with a weak alkali or acid, cleaning the part by bead blasting, coating at least a portion of a surface of the part with a stress relief layer. The stress relief layer forms a continuous layer that is approximately 50 microns to approximately 250 microns thick and is configured to preserve a structural integrity of the part from the thermal cycling of aluminum deposited on the part. The method may also include wet cleaning of the part with a heated deionized water rinse after formation of the stress relief layer.

Methods and apparatus for prevention of component cracking using stress relief layer

Upper shield with showerhead for a process chamber

Lower shield for a substrate processing chamber

Methods and apparatus for increasing voltage breakdown levels of an electrostatic chuck in a process chamber. A soft anodization layer with a thickness of greater than zero and less than approximately 10 microns is formed on an aluminum base of the electrostatic chuck. The soft anodization layer remains thermally elastic in a temperature range of approximately &#x2212;50 degrees Celsius to approximately 100 degrees Celsius. An alumina spray coating is then applied on the soft anodization layer. The soft anodization layer provides thermal stress relief between the aluminum base and the alumina spray coating to reduce/eliminate cracking caused by the thermal expansion rate differences between the aluminum base and the alumina spray coating.

Methods and apparatus for high voltage electrostatic chuck protection

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Chiba, Japan

Yuichi Wada