Konica Minolta, Inc.

The University of Tokyo

Yuichi Takeuchi

Takuji Hatano

Yasuhiko Ishikawa

The present invention addresses the issue of providing: a light-receiving element that has an absorption layer of germanium (Ge), is capable of efficiently receiving near infrared light having a large light-reception sensitivity in the absorption layer, from a free space, and has high productivity and low production cost; and a near infrared light detector comprising said light-receiving element. This light-receiving elementhas, laminated in order upon a substrate, an amplification layercontaining silicon (Si), an absorption layercontaining germanium (Ge), and an antireflection layer. The amplification layerhas, in order upon the substrate, at least an n-doped n-Si layerand a p-doped p-Si layer. The absorption layerhas at least a p-doped p-Ge layer

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Hino, Japan

Yuichi Takeuchi