Denso Corporation

Toyota Jidosha Kabushiki Kaisha

The University of Newcastle Upon Tyne

Denson Corporation

Yuichi Takeuchi

Katsumi Suzuki

Yukihiko Watanabe

Yusuke Yamashita

Narumasa Soejima

Sachiko Aoi

Masahiro Sugimoto

Atsuya Akiba

Hidefumi Takaya

Rajesh Kumar

Akitaka Soeno

Naohiro Suzuki

Ryota Suzuki

Shuhei Mitani

Yasuhiro Ebihara

Malhan Rajesh Kumar

Tsuyoshi Yamamoto

Shoji Mizuno

Mitsuhiro Kataoka

Hirokazu Fujiwara

Jun Morimoto

Kazumi Chida

Florin Udrea

Norihito Tokura

Tatsuji Nagaoka

Toshio Murata

Takeshi Miyajima

Kazukuni Hara

Masami Naito

Jun Sakakibara

Naohiro Sugiyama

Hiroo Fuma

Tadashi Misumi

Andrei Mihaila

Aiko Kaji

Takayuki Satomura

Suhail Rashid Jeremy

Akira Amano

Toshimasa Yamamoto

Kunihiko Hara

Toru Onishi

Hiroki Nakamura

Takeshi Endo

Rajesh Kumar Malhan

Shinichiro Miyahara

Nozomu Akagi

Shoichi Onda

Hiroaki Fujibayashi

Tomoo Morino

Atsushi Onogi

Takehiro Kato

Takamasa Suzuki

Teruaki Kumazawa

Yu Suzuki

Hirotaka Saikaku

Shinya Nishimura

Shigeyuki Takagi

Masaki Shimomura

Irina Nikitina

Konstantin Vassilevski

Nicholas Wright

Alton Horsfall

Yukihiro Watanabe

A semiconductor device includes a semiconductor substrate having an element region and a terminal region located around the element region. The terminal region includes multiple guard rings and multiple first diffusion regions. When the semiconductor substrate is viewed in a plan view, one of the first diffusion regions is arranged correspondingly to one of the guard rings, and each of the guard rings is located in corresponding one of the first diffusion regions. A width of each of the first diffusion regions is larger than a width of corresponding one of the guard rings.

Semiconductor device and manufacturing method of semiconductor device

A semiconductor device includes a semiconductor element having a substrate, a drift layer, a base region, a source region, trench gate structures, an interlayer insulating film, a source electrode, and a drain electrode. The substrate is made of silicon carbide. The drift layer is disposed on the substrate and has an impurity concentration lower than the substrate. The base region is made of silicon carbide and disposed on the drift layer. The source region is made of silicon carbide having an impurity concentration higher than the drift layer. Each trench gate structure has a gate trench, a gate insulating film, and a gate electrode. The interlayer insulating film covers the gate electrode and the gate insulating film. The source electrode is in ohmic-contact with the source region. The drain electrode is disposed on a rear surface of the substrate.

Silicon carbide semiconductor device and method for manufacturing same

A semiconductor manufacturing device includes: a thin film formation portion that includes a chamber; and a supply gas unit that introduces a supply gas into the chamber. The supply gas unit includes: multiple supply pipes; a raw material flow rate controller that is installed on each of the multiple supply pipes, and controls a flow rate; a collective pipe that is connected to the multiple supply pipes, and generates a mixed gas; multiple distribution pipes connected to a downstream side of the collective pipe; a pressure controller that is installed on one distribution pipe, and adjusts a mixed gas pressure; and a distribution flow rate controller that is installed on a distribution pipe different from the distribution pipe provided with the pressure controller, and controls a flow rate of the mixed gas.

Semiconductor manufacturing device

In a guard ring section of a silicon carbide semiconductor device, an electric field relaxation layer for relaxing an electric field is formed in a surface layer portion of a drift layer, so that electric field is restricted from penetrating between guard rings. Thus, an electric field concentration is relaxed. Accordingly, a SiC semiconductor device having a required withstand voltage is obtained.

Silicon carbide semiconductor device with cell section and outer periphery section

A silicon carbide semiconductor device includes a substrate, a drift layer disposed above the substrate, a base region disposed above the drift layer, a source region disposed above the base region, a gate trench formed deeper than the base region from a surface of the source region, a gate insulating film covering an inner wall surface of the gate trench, a gate electrode disposed on the gate insulating film, an interlayer insulating film covering the gate electrode and the gate insulating film and having a contact hole, a source electrode brought in ohmic contact with the source region through the contact hole, and a drain electrode disposed to a rear surface of the substrate. The source region has a lower impurity concentration on a side close to the base region than on a surface side brought in ohmic contact with the source region.

Silicon carbide semiconductor device and manufacturing method of silicon carbide semiconductor device

A semiconductor device including a semiconductor element is provided. The semiconductor element includes a saturation current suppression layer formed above a drift layer and including electric field block layers arranged in a stripe manner and JFET portions arranged in a stripe manner. The electric field block layers and the JFET portions are alternately arranged. The semiconductor element includes trench gate structures. A longer direction of the trench gate structure intersects with a longer direction of the electric field block layer and a longer direction of JFET portion. The JFET portion includes a first layer having a first conductivity type impurity concentration larger than the drift layer and a second layer formed above the first layer and having a first conductivity type impurity concentration smaller than the first layer.

Manufacturing method of semiconductor device including semiconductor element of inversion type

A semiconductor device includes: an inversion type semiconductor element that includes: a substrate having a first conductivity type or a second conductivity type; a first conductivity type layer formed on the substrate; a second conductivity type region that is formed on the first conductivity type layer; a JFET portion that is formed on the first conductivity type layer, is sandwiched by the second conductivity type region to be placed; a source region that is formed on the second conductivity region; a gate insulation film formed on a channel region that is a part of the second conductivity type region; a gate electrode formed on the gate insulation film; an interlayer insulation film covering the gate electrode and the gate insulation film, and including a contact hole; a source electrode electrically connected to the source region through the contact hole; and a drain electrode formed on a back side of the substrate.

Semiconductor device and method for manufacturing the same

Semiconductor device including saturation current suppression layer

Silicon carbide semiconductor device, and manufacturing method of the same

A semiconductor device includes an inversion type semiconductor element, which has: a substrate; a drift layer; a saturation current suppression layer; a current dispersion layer; a base region; a source region; a connection layer; a plurality of trench gate structures; an interlayer insulation film; a source electrode; and a drain electrode. A channel region is provided in a portion of the base region in contact with each trench gate structure by applying a gate voltage to the gate electrode and applying a normal operation voltage as a drain voltage to the drain electrode; and a current flows between the source electrode and the drain electrode through the source region and the JFET portion.

Semiconductor device and method for manufacturing same

When a film thickness of a second epitaxial film is measured, an infrared light is irradiated from a surface side of the second epitaxial film onto a base layer on which a first epitaxial film and the second epitaxial film are formed. A reflected light from an interface between the first epitaxial film and the base layer and a reflected light from a surface of the second epitaxial film are measured to obtain a two-layer film thickness, which is a total film thickness of the first epitaxial film and the second epitaxial film. The film thickness of the second epitaxial film is calculated by subtracting a one-layer film thickness, which is a film thickness of the first epitaxial film, from the two-layer film thickness.

Silicon carbide semiconductor device and method of manufacturing the same

A top end of the p type connection layer is connected to the p type extension region. By forming such a p type extension region, it becomes possible to eliminate a region where an interval becomes large between the p type connection layer and the p type guard ring. Therefore, in the mesa portion, it is possible to prevent the equipotential line from excessively rising up, and it is possible to secure the withstand voltage.

Silicon carbide semiconductor device and manufacturing method therefor

In a manufacturing method of a silicon carbide semiconductor device, a semiconductor substrate made of silicon carbide and on which a base layer is formed is prepared, a trench is provided in the base layer, a silicon carbide layer is epitaxially formed on a surface of the base layer while filling the trench with the silicon carbide layer, the sacrificial layer is planarized by reflow after forming the sacrificial layer, and the silicon carbide layer is etched back together with the planarized sacrificial layer by dry etching under an etching condition in which an etching selectivity of the silicon carbide layer to the sacrificial layer is 1.

Manufacturing method of silicon carbide semiconductor device

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Kariya, Japan

Yuichi Takeuchi