Tokyo Electron Limited

Tokyo Electron Limitetd

Yuichi Takenaga

Takahito Kasai

Wenling Wang

Tatsuya Yamaguchi

Youngtai Kang

Tatsuya Watanabe

Takanori Saito

Katsuhiko Komori

Kiyoshi Suzuki

Kaname Yamaji

Kazuhiro Kawamura

Daisuke Suzuki

Hiroyuki Matsuura

Syuji Nozawa

Takashi Yokota

Koichi Sakamoto

Masato Yonezawa

Masahiko Kaminishi

Yukio Tojo

Yuki Kataoka

Toshihiko Takahashi

Toshiyuki Fukumoto

Yuto Noda

Youngchul Park

Hiroichi Ota

Daisuke Kudo

Shingo Sekisawa

Asami Obara

Shota Yamazaki

Yozo Nagata

A temperature correction information calculating device for use with a semiconductor manufacturing apparatus is provided. The semiconductor manufacturing apparatus is configured to correct a preset temperature in accordance with an accumulated film thickness on an inner wall of the semiconductor manufacturing apparatus, control a temperature by using a heater such that the temperature approaches the corrected preset temperature, and perform a deposition process on an object. The temperature correction information calculating device includes a memory, and a processor coupled to the memory and configured to store a temperature correction value for correcting the preset temperature, obtain first heater power applied to the heater, predict second heater power by adding, to the first heater power, a variation of heater power due to a preset temperature change, and correct the temperature correction value based on the predicted second heater power. The first heater power is included in log information.

Temperature correction information calculating device, semiconductor manufacturing apparatus, recording medium, and temperature correction information calculating method

A temperature correction information calculation device includes a model storage unit that stores a model for generating temperature correction information in which a temperature correction value is associated with a cumulative film thickness on an inner wall of a semiconductor manufacturing apparatus that forms a film on a processing target object by a heat treatment at a set temperature corrected according to the cumulative film thickness; a learning determination unit that determines whether or not to update the model when a film forming result by the heat treatment is obtained; a model learning unit that updates the model based on the film forming result when the learning determination unit determines to update the model; and a temperature correction information generation unit that generates the temperature correction information using the model updated by the model learning unit and corrects the set temperature by the temperature correction information.

Temperature correction information calculation device, semiconductor manufacturing apparatus, storage medium, and temperature correction information calculation method

A substrate processing apparatus includes: a processing container, a temperature adjustment unit, and a controller. The controller includes a calculation unit that calculates a correction temperature for uniformizing a film thickness within a plane of each substrate, a first temperature change amount calculation unit that calculates a first temperature change amount based on the correction temperature and a thermal model, a second temperature change amount calculation unit that calculates a second temperature change amount based on a simulation of a temperature sequence using the calculated correction temperature, a temperature comparison unit that calculates a temperature difference between the first and second temperature change amounts, a film thickness information calculation unit that calculates information on a film thickness, and a temperature regulation information calculation unit that calculates temperature regulation information to uniformize a film thickness for each of a plurality of zones based on the information on the film thickness.

Substrate processing apparatus and temperature regulation method

An information processing device includes: a machine learning model selection part configured to select a machine learning model appropriate for a data set used for learning of the machine learning model; a calculation part configured to perform an optimization calculation by using the selected machine learning model to calculate process conditions that can achieve a target process result, predicted values of a process result corresponding to each of the process conditions, and reliability of the predicted values; a process condition selection part configured to select, among the process conditions that can achieve the target process result, one or more process conditions according to the predicted values of the process result and the reliability of the predicted values; and a display controller configured to display the selected process conditions, the predicted values of the process result corresponding to each of the selected process conditions, and the reliability of the predicted values.

Information processing device, recording medium, and process condition search method

A control device includes a reception unit configured to receive a film characteristic at a plurality of positions of a film formed on a substrate by a film forming processing based on a processing recipe, an optimization processing unit configured to execute an optimization calculation of the processing recipe based on the film characteristic, a diagnosis unit configured to diagnose a validity of an in-plane shape of the film characteristic based on the film characteristic, and a determination unit configured to determine whether or not to notify a user of an encouraging action based on a diagnosis result by the diagnosis unit.

Control device, system and control method

An information processing device includes a storage configured to store a first film thickness model or a first refractive index model defining an amount of change in a film thickness or a refractive index at each position of a first wafer when a film forming processing is performed by changing an output of each of a plurality of plasma sources provided in a film forming device by a predetermined amount and a calculator configured to calculate, based on the first film thickness model or the first refractive index model, a correction value of the output of each of the plurality of plasma sources to achieve a target value of a film thickness or a target value of a refractive index at each position of a second wafer.

Optimizing plasma resources for targeted film

A substrate processing method includes: carrying out a substrate from a substrate transfer container by a substrate transfer device; placing the substrate in a first position of a substrate holder; moving the substrate holder into a reaction container and processing the substrate in the reaction chamber; obtaining a film thickness measurement result of the substrate processed in the reaction container; creating a model from the film thickness measurement result; determining a second position where the substrate is placed in the substrate holder and a transfer position setting value obtained from the model; adjusting the first position of the substrate to the second position; calculating an eccentricity state of the substrate from a newly obtained film thickness measurement result; calculating an optimization such that the eccentricity state is minimized; and determining a third position to which a new substrate is placed from the transfer position setting value.

Substrate processing apparatus, information processing apparatus, and substrate processing method

A substrate processing apparatus includes a substrate transfer device that transfers a substrate accommodated in a substrate transfer container to a substrate holder; a substrate holder transfer stage that introduces the substrate holder into a reaction container; a substrate transfer controller that obtains a film thickness measurement result of the substrate, and determines a placing position of the substrate in the substrate holder by a model created in advance from the film thickness measurement result and a transfer position setting circuit; an information processing circuit that analyzes an eccentricity state from a film thickness variation state when a film thickness measurement result is newly obtained; a learning function circuit that updates the model from the eccentricity state; and an optimization function circuit that updates the placing position of the substrate by an updated model and the transfer position setting circuit.

Provided is a control device for controlling an operation of a substrate processing apparatus that forms a predetermined film on a substrate and operations of a plurality of measurement devices that measure a characteristic of the predetermined film. The control device includes: an individual difference information storing unit that stores individual difference information representing a relationship between information allocated to each of the plurality of measurement devices to specify each measurement device and an individual difference of the measurement device; and a controller that corrects a measurement value of the characteristic of the predetermined film measured by the measurement device based on information specifying the measurement device that has measured the characteristic of the predetermined film and the individual difference information stored in the individual difference information storing unit.

Control device, substrate processing system, substrate processing method, and program

A heat treatment system includes a heating unit that heats an inside of a processing chamber in which a plurality of workpieces are accommodated; a heat treatment condition storing unit that stores a heat treatment condition; a heat treatment change model storing unit that stores a heat treatment change model; a heat treatment performing unit that performs the heat treatment condition; a heat treatment result receiving unit that receives a result of heat treatment performed; and an optimum temperature calculating unit that calculate a target heat treatment result for an in-plane shape of the workpiece based on a target heat treatment result and information about a shape of the target heat treatment result, and calculate an optimum temperature that results in the target heat treatment result, based on the calculated target heat treatment result and the heat treatment change model.

Heat treatment system, heat treatment method, and program

Disclosed is a substrate processing system that includes a substrate processing apparatus configured to perform a predetermined processing on a substrate accommodated in a processing container. The substrate processing system includes: a processing execution unit configured to execute a film deposition processing on the substrate; a characteristic acquiring unit configured to acquire the characteristic of the film deposited on the substrate by the film deposition processing; and an abnormality determination unit configured to determine whether the characteristic of the film includes an abnormal value based on the characteristic of the film acquired by the characteristic acquiring unit.

Substrate processing system and control device

Disclosed is a substrate processing system including a substrate processing apparatus configured to execute a predetermined processing on a substrate accommodated in a processing container, an input receiving unit configured to receive an input of a set value for executing the predetermined processing, and a determination unit configured to determine whether or not the set value received by the input receiving unit is valid based on the set value received by the input receiving unit and a characteristic of the substrate processing apparatus.

Substrate processing system, control device, group controller, and host computer

Disclosed is a substrate processing system that performs a film deposition on plural substrates in a processing container using a film deposition condition calculated based on a characteristic of a film deposited on at least one of the substrates. The substrate processing system includes: a storage unit storing surface state information and arrangement state information that represent influences of a surface state of the one substrate and an arrangement state of the plural substrates on the characteristic of the film deposited on the one substrate, respectively; a calculation unit calculating information that represents an influence of the plural substrates on the characteristic of the film on the one substrate based on the surface state information and the arrangement state information stored in the storage unit; and a correction unit correcting the characteristic of the film deposited on the one substrate based on the information calculated by the calculation unit.

Substrate processing system, control device, and film deposition method and program

Disclosed is a control device that controls an operation of a substrate processing apparatus that forms a laminated film by forming a first film on a substrate and then forming a second film. The control device includes a recipe memory unit storing first and second film formation conditions to form the first and second films, a model memory storing first and second process models that represent the effects of the first film formation conditions on the properties of the first and second films, and a controller configured to: adjust the second film formation condition based on a measured value of a property of the laminated film formed by the first and second film formation conditions, and the second process model stored in the model memory unit; and determine whether or not to adjust the first film formation condition based on an expected value of the property of the laminated film.

Disclosed is a substrate processing method. The substrate processing method includes: a first acquisition step of acquiring a first processing condition in a first processing performed using a first number of monitor substrates and a first processing result related to the monitor substrates; a second acquisition step of acquiring a second processing condition in a second processing performed using a second number of monitor substrates and a second processing result related to the monitor substrates; a first calculation step of calculating a processing condition difference between the first processing condition and the second processing condition; and a second calculation step of calculating a processing result of substrates at slot positions where no monitor substrate is placed in the first processing, based on the first processing result, the second processing result, the processing condition difference, and a process model representing a relationship between a processing condition and a processing result.

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Iwate, Japan

Yuichi Takenaga