Murata Manufacturing Co., Ltd.

Murata Manufacturingco., Ltd.

Yuichi Takamine

Yoichi Sawada

Tsutomu Takai

Hideki Iwamoto

Hiroki Watanabe

Toshimaro Yoneda

Yasuhisa Fujii

Teruhisa Shibahara

Masaru Yata

Minefumi Ouchi

Kazunobu Shimoe

Yuji Toyota

Osamu Shibata

Keiji Okada

Noriyoshi Ota

Ayaka Yamamoto

Norio Taniguchi

Takashi Yamane

Ryo Nakagawa

Hayami Kudo

Norihiko Nakahashi

Katsuhiro Ikada

Shigeto Taga

Sunao Yamazaki

Katsuhiro Nako

A filter includes an additional circuit including first and second IDT electrode groups connected in multiple stages between first and second input/output terminals, the first IDT electrode group includes first and second IDT electrodes side by side in a propagation direction of an acoustic wave, and the second IDT electrode group includes third and fourth IDT electrodes side by side in the propagation direction. One end of each of the first and second IDT electrodes is respectively connected to the first and second input/output terminals. Other ends of the first and second IDT electrodes are connected in common and to a ground. One ends of the third and fourth IDT electrodes are connected in common. Other ends of the third and fourth IDT electrodes are connected in common. The additional circuit is connected in parallel with at least a portion of a filter circuit.

Filter and multiplexer

A multiplexer includes a transmission-side filter electrically connected to a common terminal and a transmission input terminal, and a transmission-side filter electrically connected to the common terminal and a transmission input terminal. The transmission-side filter includes a plurality of series arm resonators and a plurality of parallel arm resonators. Capacitance elements are respectively electrically connected in parallel to the series arm resonator and the parallel arm resonator, which are connected most proximately to the common terminal. IDT electrodes of a series arm resonator and a parallel arm resonator connected most proximately to the common terminal do not include a thinning electrode, and others of the series arm resonators and the parallel arm resonators include thinning electrodes.

Multiplexer, high frequency front-end circuit, and communication apparatus

A filter device includes a substrate having piezoelectricity, a first filter including an IDT electrode disposed on the substrate, a terminal electrode disposed on the substrate, a first wiring electrode disposed on the substrate and connecting the first filter and a terminal electrode, and a dielectric film disposed above the substrate to cover the IDT electrode. At least a portion of the first wiring electrode is not covered with the dielectric film.

Filter device and method for manufacturing the same

A multiplexer includes acoustic wave filters that are electrically connected to a common connection terminal. In a first transmission-side filter of the acoustic wave filters, a series arm resonator closest to the common connection terminal includes acoustic wave resonators that are electrically connected in series and capacitance elements that are electrically connected between at least one of signal paths electrically connecting the acoustic wave resonators to each other and a reference terminal.

Multiplexer

A multiplexer includes elastic wave filters with different pass bands, a common terminal to which an inductance element is serially connected in a connection path between an antenna element and the common terminal; and an inductance element. Among the elastic wave filters, a reception input terminal of a first reception filter is connected to the common terminal via the inductance element and is connected to a parallel resonator. Transmission output terminals of transmission filters and a reception input terminal of a second reception filter are connected to the common terminal, are connected to series resonators, and are not connected to parallel resonators.

Multiplexer, transmission device, reception device, high-frequency front end circuit, communication device and impedance matching method for multiplexer

A filter circuit has a first frequency band as a pass band and a second frequency band as an attenuation band. The filter circuit includes a 90-degree hybrid coupler, a first filter that is connected to the 90-degree hybrid coupler and has the first frequency band as a pass band, and a second filter that is connected to the 90-degree hybrid coupler and has the second frequency band as a pass band. The second filter includes a first inductor, a resonant circuit, and a second inductor connected in series in this order, a first capacitive element connected between a node on a signal path connecting the first inductor and the resonant circuit and a ground electrode, and a second capacitive element connected between a node on a signal path connecting the second inductor and the resonant circuit and a ground electrode.

Filter circuit using 90-degree hybrid coupler

An acoustic wave filter device includes a plurality of acoustic wave resonators. Each of the acoustic wave resonators includes a piezoelectric layer and an IDT electrode provided on the piezoelectric layer. On a surface opposite to a surface of the piezoelectric layer on which the IDT electrode is provided, a low-acoustic-velocity film and a substrate made of a semiconductor are stacked. A routing line electrically connected to an antenna terminal is provided on an insulating film provided on the piezoelectric layer.

Acoustic wave filter device and composite filter device

In an acoustic wave device, an antenna end resonator electrically closest to a first terminal is a first acoustic wave resonator. In each of the first acoustic wave resonator and a second acoustic wave resonator, a thickness of a piezoelectric layer is equal to or less than about 3.5&#x3bb;. A cut angle of the piezoelectric layer of the first acoustic wave resonator is within a range of &#x3b8;&#xb1;4&#xb0;. The cut angle of the piezoelectric layer of the second acoustic wave resonator has a larger difference from &#x3b8;(&#xb0;) than the cut angle of the piezoelectric layer of the first acoustic wave resonator.

Acoustic wave device, multiplexer, high-frequency front end circuit, and communication apparatus

A longitudinally coupled resonator type surface acoustic wave filter includes a high-acoustic-velocity member, a low-acoustic-velocity film provided on the high-acoustic-velocity member, a piezoelectric film provided on the low-acoustic-velocity film, a plurality of interdigital transducers provided on the piezoelectric film and along a propagation direction of a surface acoustic wave and each including a plurality of electrode fingers, and reflectors arranged such that the interdigital transducers are interposed therebetween from both sides in the propagation direction of the surface acoustic wave. An electrode finger pitch is uniform or substantially uniform in each of the interdigital transducers. When a wavelength determined by the electrode finger pitch in the reflector is defined as &#x3bb;, an inter-electrode finger center distance that is an interval between each of the interdigital transducers and the interdigital transducer adjacent thereto is not shorter than about 0.25&#x3bb; and not longer than about 0.37&#x3bb;.

Surface acoustic wave filter

A composite multiplexer includes a first multiplexer, a second multiplexer, and a second LC circuit. The first multiplexer includes first band pass filter circuits and first LC circuits connected to end portions of the first band pass filter circuits that are opposite to a first terminal, respectively. The second multiplexer includes second band pass filter circuits. The second LC circuit is connected between the first terminal and the second multiplexer.

Composite multiplexer

A quadplexer includes a first filter and a second filter whose passband has frequencies higher than the first filter. The first filter has a ladder filter structure including series resonators disposed on a first path and parallel resonators disposed on a path connecting the first path and ground. A series resonator that is closest to a common terminal among the series resonators includes an IDT electrode that excites elastic waves, and a reflector that reflects the elastic waves excited by the IDT electrode. A distance between the IDT electrode and the reflector is greater than or equal to about 0.44&#x3bb; and less than about 0.5&#x3bb; where &#x3bb; is a wavelength of the elastic waves that is defined by an electrode cycle of the IDT electrode.

Multiplexer, radio-frequency front-end circuit, and communication apparatus

A composite filter device includes a common terminal disposed on an element substrate including a piezoelectric layer, first and second band pass filters disposed on the element substrate, and connected at one end thereof to the common terminal, a shield electrode interposed between a signal line and the first band pass filter, the signal line being disposed on the element substrate and connecting the common terminal to the first and second band pass filters, and an inductor connected between the shield electrode and a reference potential line.

Composite filter device, high-frequency front end circuit, and communication apparatus

An acoustic wave filter device includes a first band pass filter including a first acoustic wave resonator connected between an antenna terminal and a first signal terminal and having a first pass band, and a second band pass filter connected with the antenna terminal and having a second pass band on a higher side of the first pass band. The first acoustic wave resonator includes a substrate on a surface of which a piezoelectric thin film is provided, an IDT electrode provided on the substrate, and reflectors. At least a pitch of some electrode fingers is different from a pitch of other electrode fingers in at least one of the IDT electrode and the reflectors of the first acoustic wave resonator on a side closest to the antenna terminal.

Acoustic wave filter device

A multiplexer includes a first reception-side filter and a second reception-side filter whose passband has frequencies higher than the first reception-side filter. The first reception-side filter includes a series arm resonator provided on a first path, and parallel arm resonators provided on a path electrically connecting the first path and ground. A direction connecting tips of a plurality of electrode fingers included in each resonator crosses an elastic wave propagating direction at a certain angle. The parallel arm resonator closest to a common connection terminal does not include third electrode fingers, and the other parallel arm resonators include third electrode fingers.

Multiplexer, radio-frequency (RF) front-end circuit, and communication apparatus

A filter includes a LiTaOpiezoelectric layer having a cut angle, a high acoustic velocity support substrate, a low acoustic velocity film, and an IDT electrode. A cut angle &#x3b8;of the piezoelectric layer at which a Rayleigh wave spurious response is locally reduced or minimized is determined from a wavelength of the IDT electrode, a film thickness of the IDT electrode, a specific gravity of the IDT electrode, an electrode duty, a thickness of the piezoelectric layer, and a film thickness of the low acoustic velocity film. The Cut angle of the piezoelectric layer satisfies a relationship of &#x3b8;&#x2212;4&#x2264;&#x3b8;&#x2264;&#x3b8;+4.

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Nagaokakyo, Japan

Yuichi Takamine