Seiko Epson Corporation

Yuichi Shimizu

Takuya Miyakawa

Takashi Shinohara

Shigeki Kobayashi

Takunori Iki

Yasuji Yamasaki

Hisaki Kurashina

Yoshifumi Tsunekawa

Kenichi Takahara

Yasushi Nagata

Katsumi Asada

An electro-optical device includes a first substrate, a second substrate, an adhesive agent between the first and second substrates, and an inorganic film. The adhesive agent has a first face stuck to the first substrate, a second face stuck to the second substrate, and a third face between the first and second faces. The inorganic film covers the third face on one side of the electro-optical device, a region of the first substrate between the first face and a side of the first substrate on the one side, and a region of the second substrate between the second face and a side of the second substrate on the one side. A distance between the first substrate and the second substrate is less than a distance between the first face and the side of the first substrate, and a distance between the second face and the side of the second substrate.

Electro-optical device and electronic apparatus

An electro-optical device comprises an element substrate, a counter substrate, and an inorganic film. The counter substrate is arranged so as to face the element substrate. The seal material is arranged between the element substrate and the counter substrate so as to join the element substrate and the counter substrate. The inorganic film covers a side face of the seal material, a peripheral region of the element substrate between the side face of the seal material and a side of the element substrate, and a peripheral region of the counter substrate between the side face of the seal material and a side of the counter substrate.

An electro-optical device includes an element substrate, a counter substrate arranged so as to face the element substrate through a seal material, in which the element substrate, the counter substrate, and the seal material are arranged so that a ratio of a length from a side face of each of the element substrate and the counter substrate to the seal material to a length of an interval between the element substrate and the counter substrate becomes from 50 to 300, and a barrier film is provided so as to cover the seal material and at least a part of side faces of the element substrate and the counter substrate.

A manufacturing apparatus for manufacturing an oriented film of a liquid crystal device holding a liquid crystal between a pair of substrates facing each other, includes: a film formation chamber; an evaporation section evaporating an oriented film material on the substrate by a physical vapor deposition, and forming the oriented film in the film formation chamber; a shielding plate formed between the evaporation section and the substrate, having an elongated opening for selectively evaporating the oriented film material, and covering an area of the substrate on which the oriented film is not formed; and a cleaning section providing a cleaning medium for removing the oriented film material adhered on the shielding plate, toward the opening of the shielding plate, and on the side of the shielding plate that faces the evaporation section.

Manufacturing apparatus for oriented film, liquid crystal device and electronic device

A method of manufacturing an electro-optical device including a pair of substrates with an electro-optical material interposed therebetween includes forming an alignment film made of an inorganic material on a substrate surface of at least one of the substrates opposite to the electro-optical material by fixing an angle between the substrate surface and a scattering direction of the inorganic material to a predetermined value and performing a PVD method, in a processing chamber; and, after the PVD method starts, introducing at least one kind of repair gas for repairing defects of the alignment film into the processing chamber.

Electro-optical device, method of manufacturing the same, and electronic apparatus

A method of manufacturing an electro-optical device, the electro-optical device having a pair of substrates with an electro-optical material interposed therebetween, the method includes forming electrodes on a substrate surface of at least one substrate of the pair of substrates opposite to the electro-optical material so as to apply a predetermined voltage to the electro-optical material for every pixel; forming a base film of an alignment film made of an inorganic material on the electrodes by performing a first PVD method while setting an angle which a scattering direction of the inorganic material forms with respect to the substrate surface to one value or a plurality of values such that the electrode does not generate a blocked portion at one location with respect to the scattering direction; and forming the alignment film made of the inorganic material on the base film by fixing the angle to a predetermined value different from the value set by the first PVD method or performing a second PVD method with a film forming condition different from the first PVD method.

Method of manufacturing electro-optical device, device for manufacturing the same, electro-optical device and electronic apparatus

An electro-optical device includes, above a substrate: data lines extending in a first direction; scanning lines extending in a second direction and intersecting the data lines; pixel electrodes and thin film transistors disposed so as to correspond to intersection regions of the data lines and the scanning lines; storage capacitors electrically connected to the thin film transistors and the pixel electrodes; and shielding layers disposed between the data lines and the pixel electrodes. Further, nitride films are included in the shielding layers and are formed along the data lines and are wider than the data lines.

A light-shielding film formed above a substrate has a multilayered thin film structure, in which a thin film not containing nitrogen and a thin film containing nitrogen are alternately arranged. Since the thin film containing nitrogen is formed in the light-shielding film, the stress caused by thermal distortion at the time of an annealing treatment is absorbed by the thin film containing nitrogen. Thus, cracks in an insulating film or a semiconductor film which extend from the light-shielding film can be prevented from occurring.

Electro-optical device having a light-shielding film comprising alternating layers of silicide and nitrided silicide

An electro-optical device includes: data lines extending in a first direction above a substrate; scanning lines extending in a second direction and intersecting the data lines; pixel electrodes and thin-film transistors arrayed so as to correspond to intersection regions of the data lines and the scanning lines; capacitors formed at a layer higher than the semiconductor layer of the thin-film transistors and at a layer lower than the pixel electrodes, and electrically connected to pixel potential; and upper light shielding film positioned between the data lines and the pixel electrodes; the upper light shielding film defining at least the corners of pixel opening regions; and the scanning lines, the data lines, and the capacitors, being formed in the light shielded region.

An electro-optical device including, above a substrate: data lines extending in a first direction, scanning lines extending in a second direction which intersects the data lines, pixel electrodes and thin film transistors provided so as to correspond to intersection regions of the data lines and the scanning lines, and storage capacitors electrically connected to the thin film transistors and the pixel electrodes. Dielectric films which constitute the storage capacitors are made of a plurality of layers including different materials and one of the plurality of the layers is made of a material having a higher dielectric constant than those of the other layers.

Growing community of inventors

Hokuto, Japan

Yuichi Shimizu