Sony Corporation

Yuichi Satou

Hideo Yamanaka

Hajime Yagi

Hisayoshi Yamoto

A single crystal silicon is graphoepitaxially grown using a step formed on a substrate as a seed by a catalyst process, and the obtained single crystal silicon layer is used for a dual gate type MOSTFT in an electro-optical apparatus such as a display section of a peripheral driving circuit integration type LCD. A single crystal silicon thin film having high electron/hole mobility is formed into a uniform film at a relatively low temperature, which enables the manufacturing of an active matrix substrate incorporated with a high-performance driver which can be used in a TFT display.

Electro-optical apparatus, driving substrate for an electro-optical apparatus and method of manufacturing them

An electro-optic device, such as an LCD, includes a display unit and a peripheral drive circuit unit on a single substrate. A gate comprising a gate electrode and gate insulation film is formed on a surface of the substrate. A layer of a substance having good lattice compatibility with manocrystalline silicon is formed over the gate insulation film. A layer of monocrystalline silicon is formed over the substance layer. Manocrystalline silicon is heteroepitaxially grown by catalytic CVD or the like using a crystalline sapphire film formed on the substrate to form the monocrystalline silicon layer. The monocrystalline silican layer is used as a dual gate MOSTFT of the electro-optic device.

Electro-optic device, drive substrate for electro-optic device and method of manufacturing the same

Electro-optical apparatus having a display section and a peripheral driving circuit section

Single-crystal silicon is deposited on an insulating substrate ( ) with a crystalline sapphire layer ( ) formed thereon as a seed, to form a silicon epitaxial layer ( ). P-type impurity ions are implanted into a single-crystal silicon layer, and then N-type impurity ions are implanted to make a P-channel MOS transistor portion a single-crystal silicon layer ( ). In a single-crystal silicon layer ( ), an N source region ( ) and drain region ( ) of an N-channel MOS transistor are formed. Thus, a silicon layer is epitaxially grown uniformly at low temperatures.

Method of forming monocrystalline silicon layer, method for manufacturing semiconductor device, and semiconductor device

An electro-optic device, such as an LCD, includes a display unit and a peripheral drive circuit unit on a single substrate. A gate comprising a gate electrode and gate insulation film is formed on a surface of the substrate. A layer of a substance having good lattice compatibility with monocrystalline silicon is formed over the gate insulation film. A layer of monocrystalline silicon is formed over the substance layer. Monocrystalline silicon is heteroepitaxially grown by catalytic CVD or the like using a crystalline sapphire film formed on the substrate to form the monocrystalline silicon layer. The monocrystalline silicon layer is used as a dual gate MOSTFT of the electro-optic device.

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Kanagawa, Japan

Yuichi Satou