Semiconductor Energy Laboratory Co., Ltd.

Canon Kabushiki Kaisha

Tokyo Shibaura Denki Kabushiki Kaisha

Sony Corporation

Ricoh Company, Ltd.

Olympus Optical Company, Ltd.

Nissan Motor Company Limited

Toto Ltd.

Fujitsu Corporation

Tokyo Shibaura Electric Co., Ltd.

Other

Nippon Telegraph and Telephone Corporation

Mitsubishi Petrochemical Company Limited

Nippon Steel Corporation

Nippon Steel Sumitomo Metal Corporation

Yuichi Sato

Junichi Koezuka

Shinji Ohno

Shunpei Yamazaki

Tokuichi Tsunekawa

Takashi Kawabata

Susumu Matsumura

Kosei Noda

Yuta Endo

Ryota Hodo

Hideo Yamanaka

Sachiaki Tezuka

Hajime Yagi

Hisayoshi Yamoto

Hitoshi Nakayama

Shinya Sasagawa

Daisuke Matsubayashi

Tomoaki Moriwaka

Naoto Yamade

Masayuki Suzuki

Hideomi Suzawa

Hidekazu Miyairi

Masahiro Takahashi

Atsuo Isobe

Shuhei Nagatsuka

Tatsuya Onuki

Shinji Aoki

Toshihiko Saito

Takao Kinoshita

Hideyuki Kishida

Yutaka Okazaki

Tetsuya Kakehata

Nobukazu Suzuki

Tetsunori Maruyama

Koichi Nose

Kazuya Hiratsuka

Tomokazu Yokoi

Makoto Nakazawa

Sumio Kawai

Yusuke Nonaka

Shuichi Suzuki

Hiroshi Ohki

Yasuhiko Ohsawa

Shuji Yamada

Atsushi Ito

Tatsuru Moritani

Ryosuke Hayashi

Mayu Okubo

Yuta Iida

Yoshikazu Ushijima

Yoshinobu Kato

Kohei Tokuda

Takehisa Hatano

Naoki Shiraishi

Yuji Asano

Katsutoshi Miyahara

Takashi Hirose

Miki Suzuki

Ken-ichi Kanno

Yuki Kamio

Tadahiko Morinaga

Takahiro Ode

Tomio Kishimoto

Yusuke Shino

Yoshiyasu Aoki

Yoshihisa Maitani

Naoki Okuno

Tsutomu Murakawa

Masao Koyama

Takahisa Ohsaki

Hiroshi Yui

Masaru Ohgaki

Tatsuki Yamaguchi

Daigo Ito

Shinji Shibata

Kamon Hasuo

Mitsutaka Miyabayashi

Yoshinori Ando

Kazuki Tanemura

Kenji Murata

Tamotsu Shirogami

Riho Kataishi

Hisayoshi Ohshima

Yuichi Torikoshi

Ryuichi Masuda

Mitsunori Hirata

Yosuke Senta

Akira Itsubo

Ken-Ichi Outa

Kiyoshi Mitsuyasu

Yasuyuki Oiwa

Junji Koezuka

Masuo Aizawa

Toru Iida

Junichi Hirasawa

Tsutomu Takamura

Yuko Takabayashi

Tetsuo Tajiri

Takahiko Kamae

A semiconductor device with a small variation in characteristics is provided. The semiconductor device includes an oxide, a first conductor and a second conductor over the oxide, a first insulator over the first conductor, a second insulator over the second conductor, a third conductor over the first insulator, a fourth insulator over the second insulator, a fifth insulator over the third insulator and the fourth insulator, a sixth insulator over the fifth insulator, a seventh insulator that is over the oxide and placed between the first conductor and the second conductor, an eighth insulator over the seventh insulator, a third conductor over the eighth insulator, and a ninth insulator over the third conductor and the sixth to eighth insulators. The third conductor includes a region overlapping the oxide. The seventh insulator includes a region in contact with each of the oxide, the first conductor, the second conductor, and the first to sixth insulators. The first insulator, the second insulator, the fifth insulator, and the ninth insulator are each a metal oxide having an amorphous structure.

Semiconductor device and manufacturing method thereof

A semiconductor device with less variations in transistor characteristics is provided. The semiconductor device includes: a first insulator; a first oxide over the first insulator; a first conductor and a second conductor over the first oxide; a first layer and a second layer which are in contact with a side surface of the first oxide; a second insulator over the first insulator, the first layer, the second layer, the first conductor, and the second conductor; a third insulator over the second insulator; a second oxide between the first conductor and the second conductor and over the first oxide; a fourth insulator over the second oxide; and a third conductor over the fourth insulator. Each of the first layer and the second layer includes a metal contained in the first conductor and the second conductor. The first insulator in a region in contact with the second insulator includes a region where a concentration of the metal is lower than that of the first layer or the second layer.

Semiconductor device and method for manufacturing semiconductor device

A particulate poly(lactic-co-glycolic) acid (PLGA) is provided. The particulate PLGA comprises a poly(lactic-co-glycolic) acid (PLGA), and has an average volume-based panicle diameter of 80 nm or less and a relative span factor (R.S.F.) satisfying the following formula (1):0<.≤1.20  Formula (1)

Particulate poly(lactic-co-glycolic) acid, method for manufacturing particulate poly (lactic-co-glycolic) acid, and particulate poly(lactic-co-glycolic) acid manufacturing apparatus

A semiconductor device including: a first insulator in which an opening is formed; a first conductor positioned in the opening; a first oxide over the first insulator; a second oxide over the first oxide; a third oxide and a fourth oxide over the second oxide; a second conductor over the third oxide and the first conductor; a third conductor over the fourth oxide; a fifth oxide over the second oxide; a second insulator over the fifth oxide; and a fourth conductor positioned over the second insulator and overlapping with the fifth oxide. The fifth oxide is in contact with each of a side surface of the third oxide and a side surface of the fourth oxide. The conductivity of the third oxide is higher than the conductivity of the second oxide. The second conductor is in contact with the top surface of the first conductor.

Oxide semiconductor device

A semiconductor device with little variation in transistor characteristics is provided. First to third oxide films, a first conductive film, a first insulating film, and a second conductive film are sequentially formed. Shaping them into island-like shapes. An insulator is formed over the island-like shapes and an opening is formed in the insulator and a part of the island-like shapes. Another oxide film, a gate insulating film, and a gate electrode are formed in the opening in this order to form the transistor.

Semiconductor device and manufacturing method of semiconductor device

A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a transistor and a capacitor. The transistor includes a metal oxide and a first conductor that is electrically connected to the metal oxide. The capacitor includes a first insulator which is provided over the metal oxide and which the first conductor penetrates; a second insulator provided over the first insulator and including an opening reaching the first insulator and the first conductor; a second conductor in contact with an inner wall of the opening, the first insulator, and the first conductor; a third insulator provided over the second conductor; and a fourth conductor provided over the third insulator. The first insulator has higher capability of inhibiting the passage of hydrogen than the second insulator.

Capacitor, semiconductor device, and manufacturing method of semiconductor device

An object of one embodiment of the present invention is to accurately derive an inclination of a line image sensor. One embodiment of the present invention is an image reading apparatus including: a line image sensor in which reading elements for reading an image are arrayed in a predetermined direction; a first derivation unit configured to, based on read data acquired by reading a chart on which a plurality of dot patterns is printed with the line image sensor, derive coordinates of each of the plurality of dot patterns; a second derivation unit configured to derive an inclination angle of the line image sensor based on the coordinates derived by the first derivation unit; and a first calculation unit configured to calculate a first correction value for correcting the inclination of the line image sensor based on the inclination angle derived by the second derivation unit.

Image reading apparatus, control method thereof, and storage medium

Semiconductor device and fabrication method of semiconductor device

A porous particle, wherein the porous particle has a mass median aerodynamic diameter and a volume average particle diameter that satisfy expression: y&#x2265;2x, where x denotes the mass median aerodynamic diameter and y denotes the volume average particle diameter, and the porous particle has a relative span factor (R.S.F) that satisfies expression: 0&#x3c;(R.S.F)&#x2264;1.5.

Porous particle and method for producing the same, and pharmaceutical composition

A discharge device is provided. The discharge device includes a liquid feed-discharger, and the liquid feed-discharger includes a feed unit configured to feed a liquid and a discharge unit having discharge holes configured to discharge the liquid fed by the feed unit. A ratio (X/Y) of a maximum cross-sectional area X (mm) to a minimum cross-sectional area Y (mm) of the liquid feed-discharger in a direction orthogonal to an axial direction of the liquid feed-discharger is from 1 to 5.

Discharge device, particle manufacturing apparatus, and particle

A mobile body has a reflection control layer that reflects light in a wavelength region of sunlight or in a wavelength region of infrared radiation formed on a surface thereof. A mainstream outside the mobile body is heated by the reflected light to reduce air resistance of the mobile body. A refractive index of the reflection control layer is a value outside a range between a refractive index of a body-side substance and a refractive index of air. A thickness of the reflection control layer is equal to or larger than a value obtained by dividing 187.5 nanometers by a refractive index of the reflection control layer, and equal to or smaller than a value obtained by dividing 275,000 nanometers by a refractive index of the reflection control layer.

Mobile body having reflection control layer

A semiconductor device having high on-state current and favorable reliability is provided. The semiconductor device includes a first insulator; a first oxide over the first insulator; a second oxide over the first oxide; a third oxide and a fourth oxide over the second oxide; a first conductor over the third oxide; a second conductor over the fourth oxide; a fifth oxide over the second oxide; a second insulator over the fifth oxide; and a third conductor positioned over the second insulator and overlapping with the second oxide. The fifth oxide is in contact with each of a side surface of the third oxide and a side surface of the fourth oxide. The conductivity of the third oxide is higher than the conductivity of the second oxide, and the conductivity of the fourth oxide is higher than the conductivity of the second oxide.

Semiconductor device

Growing community of inventors

Kanagawa, Japan

Yuichi Sato