Taiyo Yuden Co., Ltd.

Shinko Electric Industries Co., Ltd.

Yuichi Sasajima

Mitsutoshi Higashi

Masahiro Sunohara

Hideaki Sakaguchi

Akihito Takano

Kenichi Ota

Kunihiko Nakajima

Hideo Ishihara

Tomoyuki Takahashi

Yoshinari Take

Takayuki Takano

Kentarou Morito

A semiconductor module includes: a base substrate that includes a first dielectric film and an electrode layer, the first dielectric film having a mounting surface, the mounting surface including a first mounting area and a second mounting area; a first semiconductor part mounted on the first mounting area; and a second semiconductor part mounted on the second mounting area, the second semiconductor part including a vertical power semiconductor device, a conductive block to be connected to the electrode layer, and a wiring substrate, the vertical power semiconductor device having a first surface and a second surface, the first surface including a first terminal to be connected to the electrode layer, the second surface including a second terminal, the wiring substrate electrically connecting the conductive block and the second terminal.

Semiconductor module

Proposed are thin film MIM capacitors with which deterioration of insulating properties and leakage current properties can be sufficiently inhibited. Also proposed is a manufacturing method for the thin film MIM capacitors. For the thin film MIM capacitor (), a lower electrode (), a base metal thin film (), the dielectric thin film () and the upper electrode () are formed to approximately the same area. The lower electrode () has a configuration that differs from the other films to form a part for external connection. The side surface of the base metal thin film (), the dielectric thin film (), and the upper electrode () are covered with a base metal oxide () that comprises the same metal atoms as the base metal thin film ().

Thin film MIM capacitors and manufacturing method therefor

A wiring board provided with a silicon substrate including a through hole that communicates a first surface and a second surface of the silicon substrate. A capacitor is formed on an insulating film, which is applied to the silicon substrate, on the first surface and a wall surface defining the through hole. A capacitor part of the capacitor includes a first electrode, a dielectric layer, and a second electrode that are sequentially deposited on the insulating film on the first surface and the wall surface of the through hole. A penetration electrode is formed in the through hole covered by the first electrode, the dielectric layer, and the second electrode of the capacitor part.

Wiring board, semiconductor device, and method for manufacturing wiring board

A wiring board includes a silicon substrate with a through hole communicating with first and second substrate surfaces. A capacitor includes a capacitor part mounted on an insulating film covering the substrate first surface and including a first electrode on the insulating film, a first dielectric layer on the first electrode, and a second electrode on the first dielectric layer. A multilayer structure arranged on a wall surface defining the through hole includes the insulating film on the through hole wall surface, a first metal layer on the insulating film formed from the same material as the first electrode, a second dielectric layer on the first metal layer formed from the same material as the first dielectric layer, and a second metal layer on the second dielectric layer formed from the same material as the second electrode. The multilayer structure covers a penetration electrode in the through hole.

An inexpensive variable inductor has inductance value continuously changeable without reducing a Q value. When a control voltage is applied to a control terminal of a MOS transistor from a power supply, a continuity region is formed in a channel, and a region between main terminals becomes conductive. When the control voltage is changed, length of the continuity region in the channel is changed. This changes length of a path area of an induced current, flowing in an induced current film. Thus, the amount of induced current is increased or decreased. Therefore, when the control voltage of the MOS transistor is changed, the inductance value of the coil is continuously changed.

Switching element, variable inductor, and electronic circuit device having circuit configuration incorporating the switching element and the variable inductor

Growing community of inventors

Tokyo, Japan

Yuichi Sasajima