Mitsubishi Denki Kabushiki Kaisha

Mitsubishi Electric Corporation

Renesas Technology Corp.

Nec Personal Computers, Ltd.

Sony Corporation

Yuichi Sakai

Yoichiro Sako

Yasushi Miyajima

Akira Yamada

Toshiro Terauchi

Makoto Inoue

Toru Sasaki

Motoyuki Takai

Masanobu Iwasaki

Hiroyuki Chibahara

Masahiro Kawai

Akane Sano

Kazuhiko Tsutsumi

Tomoya Yamakawa

Akira Yamashita

Yoshifumi Takata

Kakutaro Suda

Yutaka Ohashi

Motohisa Taguchi

Naoki Yutani

Hisao Watarai

Takehiko Sato

Hideki Yabe

Yoshitatsu Kawama

Munehito Kumagai

Shinichi Hosomi

Hiroshi Ohji

Yoshikazu Utsumi

Hirobumi Matsui

Yasuyuki Nakaoka

Daisuke Niinobe

Ken Sato

Masatomi Okumura

Light receiving elements of a back connection type including first and second electrodes on their back sides are connected by an inter-element connecting body including a tabular main body section and an inter-element connecting section to form a light receiving element module. The main body section is selectively directly connected to the first electrode and arranged on the second electrode via an insulating layer. The main body section covers substantially the entire back side of each of the light receiving elements excluding a part of the second electrode. The second electrode is connected to the inter-element connecting section of an adjacent light receiving element. The main body section forms a reflecting section between the main body section and the light receiving element to enable reflected light to be made incident on the light receiving element from a gap between the first and second electrodes.

Light receiving element module and manufacturing method therefor

An encryption device, comprising: detection portion for detecting a TS header, a PES header, a sequence header, a GOP header, and a sequence end code for a transport stream not encrypted; and encryption portion for encrypting the transport stream except the TS header, the PES header, the sequence header, the GOP header, and the sequence end code. An editing device, comprising: detection portion for detecting a TS header, a PES header, a sequence header, a GOP header, and a sequence end code in a transport stream; and editing portion for editing the encrypted transport stream without decryption in units of TS packets ranging from a TS packet where the GOP header is detected to a TS packet previous to a TS packet where a subsequent GOP header is detected out of TS packets having an identical PID.

Transport stream encryption device and its editing device and method for use therein

According to the present invention, a magnetoresistive sensor device, which can be manufactured at a high yield and a low cost, is excellent in magnetoresistance characteristics and is reliable can be provided. The magnetoresistive sensor device comprises a substrate, a signal processing circuit formed on the substrate, a flattening film for flattening the signal processing circuit, a silicon nitride film formed on the flattened signal processing circuit, and magnetoresistive sensor elements formed on the silicone nitride film, in which the flattening film is preferably a spin-on-glass (SOG) film.

Magnetoresistive sensor device

A sensor chip breaking strength inspection apparatus that performs sensor chip breaking strength inspection on a semiconductor wafer on which a plurality of sensor chips having a diaphragm portion are disposed includes: a stage on which the semiconductor wafer is mounted; and a nozzle that emits a medium onto the sensor chips at a pressure equivalent to a standard breaking strength of the sensor chips.

Sensor chip breaking strength inspection apparatus and sensor chip breaking strength inspection method

There is described a semiconductor device which prevents a short circuit between a wiring layer formed in interlayer insulating films and vertical conductor plugs formed in the vicinity of the wiring layer, and a method of manufacturing the semiconductor device. The semiconductor device includes a first interlayer insulating film smoothly formed on a semiconductor substrate, conductor plugs which are formed by filling openings formed in the first interlayer insulating film so as to be level with the surface of the first interlayer insulating film, a second interlayer insulating film formed on the surface of the first interlayer insulating film and of the conductor plugs, a wiring pattern formed on the second interlayer insulating film, a third interlayer insulating film formed on the surface of the second interlayer insulating film so as to cover the wiring pattern, and an interconnect conductor formed so as to be electrically connected to the conductor plugs by filling the openings penetrating the second and third interlayer insulating films.

Semiconductor device having an improved interlayer conductor connections and a manufacturing method thereof

A thermo-sensitive flow rate sensor that comprises a plate-like substrate, a part of which is removed so that a space is provided therein, a diaphragm portion formed like a thin layer above the space in such a manner as to be integral with the plate-like substrate, and a heating element constituted by a thermo-sensitive electrically resistant film formed on the diaphragm. Plural holes penetrating the diaphragm portion are bored in an outer peripheral portion of the heating element. Each of the plurality of holes is shaped in such a way as to have obtuse corner portions or to have substantially no corner portions. The thermo-sensitive flow rate sensor measures the flow rate of a fluid, which is to be measured, according to an amount of heat transferred to the fluid from a part heated by energizing the heating element.

Thermo-sensitive flow rate sensor

A flow rate detecting element measuring the flow rates of various fluids, particularly the intake air of an internal combustion engine. The flow rate detecting element has a thin film layer including a support film and a protective film on one surface of a flat substrate, a heating resistance section and a comparative resistance section thermosensitive resistor having patterns and located between the support film and the protective film. The flat substrate has a recess which penetrates the flat substrate in the thickness direction thereof and facing the heating resistance section and the comparative resistance section. A fluid flow passage communicates with the recess which faces the comparative resistance section for fluid flow into the recess. Flow rate or velocity of a fluid can be measured accurately using the heating resistance section according to the fluid temperature reported by the comparative resistance section.

Heat-sensitive type flow rate detecting element and holder therefor

The semiconductor device includes a semiconductor wafer which is partitioned into chip regions by scribe line area. A device pattern is formed in the device forming region included in the chip region. A monitor pattern is formed from the same material as that of the device patterns in the chip region simultaneously with the device pattern. An interlayer insulating film is formed in the chip region so as to cover the device pattern and the monitor pattern. The monitor pattern is used to measure the thickness of the interlayer insulating film.

Method of manufacturing a semiconductor device having a monitor pattern, and a semiconductor device manufactured thereby

A pressure sensor of the present invention comprises a diaphragm having a first surface which receives pressure and a thermal detecting portion with a heat sensitive portion disposed as to oppose the diaphragm through a spacer, wherein displacement values of the diaphragm owing to variations in pressure are detected at the thermal detecting portion as variation values of thermal equilibrium state. With this arrangement, a surface of the diaphragm which directly receives pressure from measuring fluid does not need to undergo film forming or photolithographic processes whereby main portions of thermal pressure detecting elements might be formed onto a silicon substrate by large quantities in a lump sum through simple manufacturing processes so that it is possible to improve accuracy and reliability of the thermal pressure detecting elements and to obtain a pressure sensor of low cost.

Pressure sensor with a thermal pressure detecting element

Infrared detection element array and method for fabricating the same

Growing community of inventors

Tokyo, Japan

Yuichi Sakai