Sharp Kabushiki Kaisha Corporation

Yuichi Saito

Yoshihiro Okada

Masaya Okamoto

Atsushi Ban

Hiroyuki Ohgami

Shinya Yamakawa

Masao Moriguchi

Yoshihiro Izumi

Yohsuke Kanzaki

Takeshi Hara

Hisashi Nagata

Tetsuya Okamoto

Yasuaki Iwase

Yoshimasa Chikama

Mayuko Sakamoto

Tokuo Yoshida

Yoshiki Nakatani

Yudai Takanishi

Akihiko Kohno

The present invention provides a circuit board having excellent productivity, particularly a circuit board having excellent productivity with respect to a semiconductor layer and source layer forming step, a display device, and a process for producing a circuit board. The circuit board of the present invention is a circuit board including an oxide semiconductor layer and an electrode connected to the oxide semiconductor layer, wherein the electrode is formed by essentially laminating a layer made of a metal other than copper and a layer containing copper.

Circuit board, display device, and process for production of circuit board

A diodeincludes a gate electrode, a gate insulating layerprovided on the gate electrode, at least one semiconductor layerprovided on the gate insulating layerand which includes a first regionand a second region, a first electrodewhich is provided on the first regionand which is electrically coupled to the first regionand the gate electrode, and a second electrodewhich is provided on the second regionand which is electrically coupled to the second region. The at least one semiconductor layerincludes a channel regionwhich extends above the gate electrodewith the intervention of the gate insulating layertherebetween, and a resistor regionwhich does not extend above the gate electrode. When the diodeis in an ON state, an electric current path is formed between the first electrodeand the second electrode, the electric current path including the channel regionand the resistor region

Semiconductor device

A semiconductor deviceincludes: a substrate; an active layerprovided on the substrateand including a channel region, and a first regionand a second regionthat are respectively located on opposite sides of the channel region; first and second contact layersandrespectively in contact with the first and second regionsandof the active layer; a first electrodeelectrically coupled to the first regionvia the first contact layer; a second electrodeelectrically coupled to the second regionvia the second contact layer; and a gate electrodeprovided such that a gate insulating layeris interposed between the gate electrodeand the active layer, the gate electrodebeing configured to control a conductivity of the channel region. The active layercontains silicon. The semiconductor device further includes an oxygen-containing silicon layerbetween the active layerand the first and second contact layers. The layercontains oxygen at a concentration higher than the active layerand the first and second contact layers

Semiconductor element and method for manufacturing the same

An active matrix substrate includes base substrate, gate lines, data lines, thin-film transistors and pixel electrodes. The gate lines are formed on the base substrate. The data lines are formed over the gate lines. Each of the data lines crosses all of the gate lines with an insulating film interposed therebetween. The thin-film transistors are formed over the base substrate. Each of the thin-film transistors is associated with one of the gate lines and operates responsive to a signal on the associated gate line. Each of the pixel electrodes is associated with one of the data lines and one of the thin-film transistors and is electrically connectable to the associated data line by way of the associated thin-film transistor. Each of the pixel electrodes and the associated thin-film transistor are connected together by way of a conductive member. Each of the pixel electrodes crosses one of the gate lines, while the conductive member for the pixel electrode crosses another one of the gate lines that is adjacent to the former gate line.

Active matrix substrate, method of making the substrate, and display device

A production method of a semiconductor element having a channel includes forming a resist pattern film on a thin film formed on a substrate, and pattering the thin film by etching. The production method also includes forming a second resist pattern film by applying a fluid resist material inside a channel groove after channel etching or inside a resist groove formed above a channel region before channel etching. The production method may also include forming a gate electrode, a gate insulating film, a semiconductor film, and a conductive film on an insulating substrate. The method may include applying the fluid resist material inside the channel groove, thereby forming the second resist pattern film, and patterning the semiconductor film using at least the second resist pattern film.

Production methods of a patterned thin film, semiconductor element, and circuit substrate using fluid resist material

A semiconductor device includes a semiconductor layer having a channel region, an impurity layer having a source region and a drain region, and a gate electrode provided so as to face the semiconductor layer with a gate insulating film interposed therebetween. The semiconductor layer has a layered structure of at least a first amorphous film and a crystalline film including a crystal phase, and the first amorphous film is formed directly on the gate insulating film.

Semiconductor device, method for manufacturing the semiconductor device, and display device

The present invention provides production methods of a pattern thin film, a semiconductor element and a circuit substrate, capable of eliminating the number of photolithography processes needed for patterning; and a semiconductor element, a circuit substrate, and an electron device obtained by the production methods. The production method of the pattern thin film of the present invention is a production method of a pattern thin film, comprising the steps of: forming a first resist pattern film on a thin film formed on a substrate; forming a second resist pattern film; patterning the thin film using at least the second resist pattern film, wherein in the step of forming the second resist pattern film, a fluid resist material or an organic solvent is applied on a groove of a bank pattern formed using the first resist pattern film.

Production methods of pattern thin film, semiconductor element, and circuit substrate, and resist material, semiconductor element, and circuit substrate

Active matrix substrate and display device

In an active matrix substrate, a glass substrate is provided with TFTs having gate electrodes connected to scanning lines also provided on the glass substrate. The glass substrate is further provided with auxiliary capacitance lines, formed on the same layer as the scanning lines. Further, pixel electrodes connected to drain electrodes of the TFTs are formed on the same layer as signal lines connected to source electrodes of the TFTs. An insulating layer is provided between the layer forming the signal lines and pixel electrodes and the layer forming the drain and source electrodes. Since the insulating film is present between the signal lines and the scanning and auxiliary capacitance lines, influence on the auxiliary capacitance value can be reduced, as can a signal line capacitance value. As a result, even when the auxiliary capacitance value is increased, the signal line capacitance value remains small.

Growing community of inventors

Tenri, Japan

Yuichi Saito