Nippon Kayaku Kabushiki Kaisha

Polatechno Co., Ltd.

Yuichi Sadamitsu

Hiroaki Ohno

Takahiro Higeta

Takuto Nishiguchi

Shoji Shinamura

Kazuo Takimiya

Masahiro Hamada

Tatsuya Aotake

Masahiro Abe

Satoru Inoue

Hirokazu Kuwabara

Hidenori Yakushiji

Kazuki Niimi

Toshifumi Inouchi

Yuta Hashimoto

Kazuyuki Kawabe

Nozomi Onodera

Eisei Kanoh

Kentaro Maeda

The purpose of the present invention is to provide: an organic semiconductor composition suitable for preparing an organic thin film by a solution method, an organic thin film obtained by using the organic semiconductor composition, and a practical field effect transistor which uses the organic thin film. The practical field effect transistor which uses the organic thin film has small variances in mobility and a threshold value, while maintaining a high mobility. Disclosed in the present specification is an organic semiconductor composition including an organic semiconductor compound, an insulation compound, an organic solvent A, which is a good solvent for the insulation compound, and an organic solvent B, which is a poor solvent for the insulation compound and has a higher boiling point than the organic solvent A. The mass ratio a:b of the organic solvent A and the organic solvent B is 1:8 to 8:1.

Organic semiconductor composition, organic thin film, and organic thin film transistor

A dibenzopyrromethene boron chelate compound is represented by the following formula (1): 

Dibenzopyrromethene boron chelate compound, near-infrared light absorbing material, thin film and organic electronics device

A compound is represented by the formula, Rto Rare each a hydrogen atom, aliphatic hydrocarbon group, aromatic group, heterocyclic group, a halogen atom, or the like. One of Xto Xis a sulfur atom, and the remaining two are carbon atoms having one R. One of Xto Xis a sulfur atom, and the other two are carbon atoms having one R. Ris a hydrogen atom, aliphatic hydrocarbon group, aromatic group, heterocyclic group, a halogen atom, or the like. When Xand Xare each RC, Xand Xare each RC, Xand Xare each RC, or Xand Xare each RC, the adjacent Rs may be bounded to each other to form a cyclic structure.

Dibenzopyrromethene boron chelate compound, near-infrared light-absorbing material, thin-film, and organic electronic device

[Problem] To provide: a novel compound which has high mobility and on/off ratio and is useful for organic electronic devices; and a method for producing the compound. [Solution] A condensed polycyclic aromatic compound which is represented by general formula (1). (In the formula, A represents a 1,5-dihydronaphthalene ring or a 2,6-dihydronaphthalene ring; each of R, R, Rand Rindependently represents a hydrogen atom, a halogen atom, a substituted or unsubstituted aliphatic hydrocarbon group, a substituted or unsubstituted alicyclic hydrocarbon group, a substituted or unsubstituted aromatic hydrocarbon group, a substituted or unsubstituted hydrocarbon oxy group, a substituted or unsubstituted ester group, a substituted or unsubstituted acyl group, or a substituted or unsubstituted cyano group; and each of Xand Xindependently represents an oxygen atom, a sulfur atom or a selenium atom.) 

Condensed polycyclic aromatic compound and use thereof

The present invention provides a fused aromatic compound represented by general formula (1) or general formula (2): wherein Rto Reach independently represent an atom or a functional group selected from the group consisting of a hydrogen atom, a halogen atom, a hydrocarbon oxy group, an aromatic hydrocarbon group, an aliphatic hydrocarbon group, an alicyclic hydrocarbon group, an ester group, an acyl group, a cyano group, and a substituted silyl group, Xto Xeach independently represent a cyano group, an ester group, or an acyl group, and Yto Yeach independently represent an oxygen atom, a sulfur atom, or a selenium atom.

Fused polycyclic aromatic compounds, organic semiconductor material and thin film including the same, and method for producing an organic semiconductor device

Azo compounds represented by formula (1) or (2) (In the formulas, A represents a phenyl group or naphthyl group that has at least 1 substituent. R-Rrepresent a hydrogen atom, lower alkyl group or lower alkoxy group, with at least one of R-Rbeing a lower alkoxy group that has a sulfone group. X represents an optionally substituted amino group, optionally substituted benzoylamino group, optionally substituted phenylamino group, optionally substituted phenyl azo group or optionally substituted naphthotriazole group) and salts thereof. 

Azo compounds, and dye-based polarizing films and polarizing plates comprising the same

A method for producing a heterocyclic compound represented by general formula (2) from a heterocyclic compound represented by general formula (1) (in the formulae, X1 represents a halogen atom; each of Y1 and Y2 independently represents an oxygen atom, sulfur atom, or selenium atom; each of R1 and R2 independently represents a substituent; m and n respectively represent the number of substituents R1 and R2, each of m and n representing an integer of 0-4; and when m and n are 2 or higher, R1 and R2 may be the same or different and may bond to each other to form an optionally substituted ring). 

Method for producing aromatic compound

Disclosed is an azo compound represented by the general formula (1) or a salt thereof: 

Azo compound and salt thereof, and dye-containing polarizing film comprising the compound or salt

Provided are a novel heterocyclic compound represented by formula (1), and a field-effect transistor having a semiconductor layer comprising the aforementioned compound. Also provided is a method for producing an intermediate enabling the production of the aforementioned novel heterocyclic compound. (In the formula, Rand Rrepresent a hydrogen atom, a Calkyl group or an aryl group. However, when Reach independently represents a Calkyl group or an aryl group, Rrepresents a hydrogen atom or each independently represents an aryl group; and when Rrepresents a hydrogen atom, Reach independently represents an aryl group.) 

Heterocyclic dinaphtho thieno thiophene (DNTT) compounds for use as organic semiconductor thin films in field effect transistors and related methods

Disclosed is an azo compound represented by the formula (1) below, a salt thereof, or a copper complex salt compound thereof. (In the formula, R1 and R2 independently represent a hydrogen atom, a sulfonic acid group, a lower alkyl group or a lower alkoxyl group; R3-R6 independently represent a hydrogen atom, a lower alkyl group or a lower alkoxyl group; R7 represents a lower alkyl group or a lower alkoxyl group; and n represents 0 or 1.)

Azo compound and dye polarizing film containing the same

Azo compounds represented by formula (1) (In the formula, Rrepresents a lower alkoxy group with a sulfone group. R-Reach independently represents a hydrogen atom, lower alkyl group or lower alkoxy group. X is an optionally substituted amino group, optionally substituted benzoylamino group, optionally substituted phenylamino group, optionally substituted phenyl azo group or optionally substituted naphthotriazole group. m represents 1 or 2 and n represents 0 or 1.) and salts thereof. 

Azo compound and salts thereof, as well as dye-based polarization films and polarizing plates comprising the same

Disclosed is an azo compound represented by the formula (1) or (2) below, or a salt thereof. (In the formulae, A represents a substituted phenyl group or a naphthyl group having 1-3 sulfonic acid groups; X represents &#x2014;N&#x2550;N&#x2014; or &#x2014;NHCO&#x2014;; R-Rindependently represent a hydrogen atom, a lower alkyl group or a lower alkoxyl group; m represents a number of 1-3; and n represents 0 or 1.)

Disclosed is an azo compound represented by the formula (1) or (2) below, or a salt thereof. (In the formulae, A represents a substituted phenyl group or a naphthyl group having 1-3 sulfonic acid groups; X represents &#x2014;N&#x2550;N&#x2014; or &#x2014;NHCO&#x2014;; R-Rindependently represent a hydrogen atom, a lower alkyl group or a lower alkoxyl group; m represents a number of 1-3; and n represents 0 or 1).

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Tokyo, Japan

Yuichi Sadamitsu