Canon Anelva Corporation

Mitsubishi Heavy Industries Limited

Yuichi Otani

Takashi Nakagawa

Naoki Inoue

Shingo Nishikata

Koichi Hamamoto

Takuya Seino

Masahiro Kato

Yoshiyuki Kondo

Atsushi Kodama

Hiroyuki Daigo

Tomoya Morioka

Kazumasa Nishimura

Yoshiteru Komuro

Atsushi Imai

Nobuhide Hara

Hideyuki Uechi

Naomu Kitano

Kentaro Hayashi

Jiro Kasahara

Takumi Hori

Tadahiko Suzuta

Shunsuke Tanaka

Takahiro Hidaka

Hidetaka Kafuku

Hiromu Okamoto

Hiroko Kitamoto

Eun-Mi Kim

Taichi Yoshii

Yoshimitsu Shimane

Young-suk Choi

Yasushi Takayama

Tomoki Hanada

Fumito Kajitani

Naotaka Komatsu

Norito Katsuki

Sumiu Uchida

Eun-mi Kim

Kanako Nagayama

Junnosuke Nakatani

Hiroki Okuyama

Yuta Murooka

A cooling system of the present disclosure includes: a coolant tank storing a coolant removing heat from a heating element in a closed space as an inner space; a plurality of heat pipes that are arranged to extend from the coolant tank toward the outside of the coolant tank and respectively having passages allowing the coolant as a working fluid to be movable therethrough; and a blower fan blowing air to the plurality of heat pipes from the outside of the coolant tank in a direction in which the heat pipes are arranged, wherein a cross-sectional shape orthogonal to the extension direction of each heat pipe is a flat plate shape having a leading edge on an upstream side of a blowing direction of the blower fan and a trailing edge on a downstream side thereof with the blowing direction as a longitudinal direction.

Cooling system

A steam generation apparatus includes: a heat medium flow passage through which a heat medium flows; a primary economizer disposed in the heat medium flow passage; a secondary economizer disposed in the heat medium flow passage at an upstream side of the primary economizer with respect to a flow direction of the heat medium; a primary evaporator disposed in the heat medium flow passage at an upstream side of the secondary economizer with respect to the flow direction of the heat medium; a first flash tank for generating flash steam; a first feed water line configured to supply water heated by the primary economizer to the secondary economizer; and a second feed water line disposed so as to branch from the first feed water line and configured to supply the water heated by the primary economizer to the first flash tank.

Steam generation apparatus and exhaust gas heat recovery plant

A shaft sealing structure for a rotation shaft, includes a sealing ring having ends formed by removal of its part. The ends abutting each other are continuous in the circumferential direction when the sealing ring is reduced in diameter to a radially inner side. The sealing ring is provided along the circumferential direction of the rotation shaft so as to be contactable with an outer peripheral surface of the rotation shaft. The structure also includes a pressing member configured to be movable between a pressing position and a retracted position; an elastic member configured to bias the pressing member toward the pressing position by elastic force; and a support member configured to support the pressing member at the retracted position against the elastic force, and to allow the pressing member to move to the pressing position at a predetermined temperature.

Shaft sealing structure and primary coolant circulation pump

A method includes: a first film formation process forming a film by sputtering a first insulator target when a projection plane of the first insulator target on a plane including a front face of a substrate is in a first state; and a second film formation process forming a film by sputtering a second insulator target when a projection plane of the second insulator target formed on the plane including the front face of the substrate is in a second state different from the first state. The second film formation process provides the insulating film having a second characteristic variation having opposite tendency to a first characteristic variation in the film provided by the first film formation process, the first characteristic variation occurring from a center portion to a peripheral portion of the substrate, the second characteristic variation occurring at least partly from the center portion to the peripheral portion.

Method of manufacturing tunnel magnetoresistive effect element and sputtering apparatus

This solid laser amplification device has: a laser medium part that has a solid medium, into which a laser light enters from an entrance part and from which the laser light (L) is emitted to the outside from an exit part, and an amplification layer, which is provided on the surface of the medium, receives the laser light in the medium, and amplifies and reflects said light toward the exit part; a microchannel cooling part that cools the amplification layer; and a thermally conductive part that is provided so as to make contact between the amplification layer and the cooling part and transfers the heat of the amplification layer to the cooling part.

Solid laser amplification device

A solid laser amplification device having a laser medium that has a solid medium, into which a laser light enters and from which the laser light is emitted, and an amplification layer, provided on the surface of the medium, receives the laser light in the medium, and amplifies and reflects the light toward the exit; and a microchannel cooling part that has a plurality of cooling pipelines, into which a cooling solvent is conducted and which are arranged parallel to the surface of the amplification layer, and a cooling surface, at the outer periphery of the cooling pipelines and attached on the surface of the amplification layer, the microchannel cooling part cooling the amplification layer. The closer the position of the cooling pipeline to a position facing a section of the amplification layer that receives the laser light, the greater the cooling force exhibited by the cooling part.

This invention provides a manufacturing method of a magnetoresistive effect element having a higher MR ratio than a conventional element. A manufacturing method of a magnetoresistive effect element of an embodiment of the invention includes: a step of forming a tunnel barrier layer on a substrate, on a surface of which one of a magnetization free layer and a magnetization fixed layer is formed; a step of cooling the substrate after the step of forming a tunnel barrier layer; a step of forming an other one of the magnetization free layer and the magnetization fixed layer on the tunnel barrier layer after the step of cooling; and a step of raising a temperature of the substrate after the step of forming the other one of the magnetization free layer and the magnetization fixed layer.

Manufacturing method of magnetoresistive effect element

A laser oscillation cooling device () includes a light emitting section () that emits laser excitation light (Z), a laser excitation section () that excites the laser excitation light (Z) to emit laser light (Z) and has a heat generating region (S) where heat is locally generated, a storage tank () capable of storing an extremely low temperature liquid (L), a pressurizing section () that brings the extremely low temperature liquid (L) into a sub-cool state by pressurizing the inside of the storage tank (), and a jetting supply section () that removes heat from the laser excitation section () by jetting the extremely low temperature liquid (L) in the sub-cool state from a plurality of jet ports arrayed in a two-dimensional manner to the laser excitation section ().

Laser oscillation cooling device

Provided is a method for manufacturing a magnetoresistive element, including a step of forming a tunnel barrier layer, wherein the step of forming the tunnel barrier layer includes a deposition step of depositing a metal film on top of a substrate, and an oxidation step of subjecting the metal film to an oxidation process. The oxidation step includes holding the substrate having Mg formed thereon, on a substrate holder in a processing container in which the oxidation process is performed, supplying an oxygen gas to the substrate by introducing the oxygen gas into the processing container, at a temperature at which Mg does not sublime, and heating the substrate after the introduction of the oxygen gas.

Method for manufacturing magnetoresistive element

The present invention provides a nonvolatile memory element, in a nonvolatile memory element having a variable resistance layer possessing a stacked structure, in which the variable resistance layer has a high resistance change ratio, and a method of manufacturing the same. The nonvolatile memory element according to one embodiment of the present invention includes a first electrode, a second electrode, and a variable resistance layer which is interposed between the first electrode and second electrode and in which the resistance value changes into at least two different resistance states. The variable resistance layer possesses a stacked structure having a first metal oxide layer containing Hf and O, and a second metal oxide layer that is provided between the first metal oxide layer and at least one of the first electrode and the second electrode and contains Al and O.

Nonvolatile memory element and method of manufacturing the same

The present invention provides a reactive sputtering method and a reactive sputtering apparatus which suppress a film quality change caused by a temperature variation in continuous substrate processing. An embodiment of the present invention performs reactive sputtering while adjusting a flow rate of reactive gas according to the temperature of a constituent member facing a sputtering space. Specifically, a temperature sensor is provided on a shield and the flow rate is adjusted according to the temperature. Thereby, even when a degassing amount of a film adhering to the shield changes, a partial pressure of reactive gas can be set to a predetermined value. For a resistance change layer constituting a ReRAM, a perovskite material such as PrCaMn03 (PCMO), LaSrMnO3 (LSMO), and GdBaCoxOy (GBCO), a two-element type transition metal oxide material which has a composition shifted from a stoichiometric one, such as nickel oxide (NiO), vanadium oxide (V2O5), and the like are used.

Reactive sputtering method and reactive sputtering apparatus

In a variable resistance nonvolatile storage element, an electrode suitable for a variable resistance operation and formed of a metallic nitride layer containing Ti and N is provided. In a nonvolatile storage device including: a first electrode; a second electrode; and a variable resistance layer which is sandwiched between the first electrode and the second electrode and in which a resistance value changes to two different resistance states, at least one of the first electrode and the second electrode is an electrode including a metallic nitride layer containing at least Ti and N, and a mole ratio (N/Ti ratio) between Ti and N in at least a part of the metallic nitride layer, the part being in contact with the variable resistance layer is 1.15 or more and a film density is 4.7 g/cc or more.

Nonvolatile storage element and manufacturing method thereof

MgO-based magnetic tunnel junction (MTJ) device includes in essence a ferromagnetic reference layer, a MgO tunnel barrier and a ferromagnetic free layer. The microstructure of MgO tunnel barrier, which is prepared by the metallic Mg deposition followed by the oxidation process or reactive sputtering, is amorphous or microcrystalline with poor (001) out-of-plane texture. In the present invention at least only the ferromagnetic reference layer or both of the ferromagnetic reference and free layer is proposed to be bi-layer structure having a crystalline preferred grain growth promotion (PGGP) seed layer adjacent to the tunnel barrier. This crystalline PGGP seed layer induces the crystallization and the preferred grain growth of the MgO tunnel barrier upon post-deposition annealing.

Ferromagnetic preferred grain growth promotion seed layer for amorphous or microcrystalline MgO tunnel barrier

Growing community of inventors

Tokyo, Japan

Yuichi Otani