Hitachi Cable, Inc.

Nec Corporation

Hitachi Metals, Ltd.

Flosfia Inc.

National Institute for Materials Science

Cemedine Co., Ltd.

Other

Sumitomo Chemical Company, Limited

Kyoto University

Saga University

Sciocs Company Limited

Yuichi Oshima

Masatomo Shibata

Akira Usui

Katsuaki Kawara

Hiroshi Aoki

Hajime Fujikura

Taichiroo Konno

Hideharu Hashimukai

Yoshinobu Egawa

Yasunobu Horie

Tomokazu Wakaume

Takehiro Yoshida

Toshimi Hitora

Takashi Shinohe

Shizuo Fujita

Kentaro Kaneko

Tokiyoshi Matsuda

Takeshi Eri

Makoto Kasu

Haruo Sunagawa

A crystalline multilayer structure having a high-quality crystalline layer and a semiconductor device employing such a crystalline multilayer structure are provided. A crystalline multilayer structure, including a first crystalline layer having a first crystal, and a second crystalline layer stacked on the first crystalline layer and having a second crystal, wherein the first crystal includes polycrystalline &#x3ba;-GaOand the second crystal is a single crystal of a crystalline oxide.

Crystalline multilayer structure, semiconductor device, and method of manufacturing crystalline structure

A high-quality crystalline film having less impurity of Si and the like and useful in semiconductor devices is provided. A crystalline film containing a crystalline metallic oxide including gallium as a main component, wherein the crystalline film includes a Si in a content of 2&#xd7;10cmor less.

Crystalline film containing a crystalline metal oxide and method for manufacturing the same under partial pressure

According to an aspect of a present inventive subject matter, a crystalline film includes a crystalline metal oxide as a major component, the crystalline film includes a corundum structure, a surface area that is 9 &#x3bc;mor more, and a dislocation density that is less than 5&#xd7;10cm.

Crystalline film, semiconductor device including crystalline film, and method for producing crystalline film

A nitride semiconductor crystal producing method, includes growing a nitride semiconductor crystal over a seed crystal substrate, while applying an etching action to an outer end of the seed crystal substrate during the growing of the nitride semiconductor crystal.

Nitride semiconductor crystal producing method including growing nitride semiconductor crystal over seed crystal substrate

A nitride-based semiconductor substrate has a diameter of 25 mm or more, a thickness of 250 micrometers or more, a n-type carrier concentration of 1.2&#xd7;10cmor more and 3&#xd7;10cmor less, and a thermal conductivity of 1.2 W/cmK or more and 3.5 W/cmK or less. Alternatively, the substrate has an electron mobility &#x3bc; [cm2/Vs] of more than a value represented by log&#x3bc;=17.7&#x2212;0.288 logn and less than a value represented by log&#x3bc;=18.5&#x2212;0.288 logn, where the substrate has a n-type carrier concentration n [cm] that is 1.2&#xd7;10cmor more and 3&#xd7;10cmor less.

Nitride-based semiconductor substrate and semiconductor device

A nitride semiconductor crystal producing method, a nitride semiconductor epitaxial wafer, and a nitride semiconductor freestanding substrate, by which it is possible to suppress the occurrence of cracking in the nitride semiconductor crystal and to ensure the enhancement of the yield of the nitride semiconductor crystal. The nitride semiconductor crystal producing method includes growing a nitride semiconductor crystal over a seed crystal substrate, while applying an etching action to an outer end of the seed crystal substrate during the growing of the nitride semiconductor crystal.

Nitride semiconductor crystal producing method, nitride semiconductor epitaxial wafer, and nitride semiconductor freestanding substrate

The invention provides a method for manufacturing a Group III nitride semiconductor crystal. The method includes the steps of preparing a seed crystal and performing a convex surface-growing step to grow the group III nitride semiconductor crystal. The growth surface of the group III nitride semiconductor crystal is constituted only by a plurality of surfaces not vertical to a growth direction and the group III nitride semiconductor crystal grows while forming a convex shape as a whole by the growth surface constituted of the plurality of surfaces. The invention also provides a method for manufacturing a group III nitride semiconductor substrate.

Method for manufacturing a group III nitride semiconductor crystal and method for manufacturing a group III nitride semiconductor substrate

A method of making a compound semiconductor substrate includes providing a GaN compound semiconductor single crystal ingot, and cutting the ingot with a cutter to form a GaN single crystal substrate. The cutting is performed while controlling a temperature in a contact portion between the ingot and the cutter to be not more than 160&#xb0; C. such that a cut surface of the GaN single crystal substrate has an arithmetical mean waviness (Wa) not more than 9 &#x3bc;m.

Compound semiconductor substrate production method

A group III nitride semiconductor substrate production method includes preparing a bulk crystal formed of a group III nitride semiconductor single crystal. The group III nitride semiconductor single crystal has one crystalline plane and an other crystalline plane. Hardness of the other crystalline plane is smaller than hardness of the one crystalline plane. The prepared bulk crystal is cut from the other crystalline plane to the one crystalline plane of the bulk crystal.

Group III nitride semiconductor substrate production method, and group III nitride semiconductor substrate

A nitride semiconductor substrate includes two principal surfaces including an upper surface that is a growth face and a lower surface on its opposite side. An FWHM in a surface layer region at depths of from 0 to 250 nm from the upper surface is narrower than an FWHM in an inner region at depths exceeding 5 &#x3bc;m from the upper surface, where the FWHMs are obtained by X-ray rocking curve measurement using diffraction off a particular asymmetric plane inclined relative to the upper surface.

Nitride semiconductor substrate, production method therefor and nitride semiconductor device

A group III-V nitride-based semiconductor substrate includes a group III-V nitride-based semiconductor crystal. A surface area of the substrate is greater than or equal to 45 cm. A thickness of the substrate is greater than or equal to 200 &#x3bc;m. An in-plane dislocation density of the substrate is less than or equal to 2&#xd7;10cmin average. The in-plane dislocation density of the substrate is less than or equal to 150% of the average at maximum.

Group III-V nitride based semiconductor substrate and method of making same

A GaN single-crystal substrate has a substrate surface in which polarity inversion zones are included. The number density of the polarity inversion zones in the substrate surface is not more than 20 cm. A GaN single crystal production method includes introducing group III and V raw material gases on a substrate, and growing a GaN single crystal on the substrate. The growth temperature is within the range of not less than 1100&#xb0; C. and not more than 1400&#xb0; C., the group V to III raw material gas partial pressure ratio (V/III ratio) is within the range of not less than 0.4 and not more than 1, and the number density of polarity inversion zones in a surface of the substrate is not more than 20 cm.

GaN single-crystal substrate and method for producing GaN single crystal

A method of fabricating a group III nitride semiconductor single crystal includes preparing a seed substrate which includes group III nitride semiconductor and has a crystal growth face of single index plane, and epitaxially growing the group III nitride semiconductor single crystal on the crystal growth face, wherein the group III nitride semiconductor single crystal is epitaxially grown while being surrounded by a plurality of crystal surfaces including low-index planes spontaneously formed, and the low-index planes have a structure that each of plane indices showing a crystal plane is not more than 3.

Method of fabricating group III nitride semiconductor single crystal, and method of fabricating group III nitride semiconductor single crystal substrate

A structure of a substrate used for growing a crystal layer of a semiconductor, particularly a group-III nitride semiconductor and its manufacturing method. The substrate comprises two porous layers on a base. The mean opening diameter of the pores of the first porous laser, the outermost layer, is smaller than the means diameter of the pores in the second porous layer nearer to the base than the first porous layer. The first and second porous layers have volume porosities of 10 to 90%. More then 50% of the pores of the first porous layer extend from the surface of the first porous layer and reach the interface between the first and second porous layers. Even by a conventional crystal growing method, an epitaxial crystal of low defect density can be easily grown on the porous substrate.

Growing community of inventors

Tsuchiura, Japan

Yuichi Oshima