Hitachi, Ltd.

Gree, Inc.

Kurita Water Industries Ltd.

Tsukishima Kikai Co., Ltd.

Hitachi Electronics Co., Ltd.

Yuichi Ono

Kazuhiro Ito

Takashi Kajimura

Makoto Morioka

Kazuhiro Kurata

Naoki Chinone

Kazuhisa Uomi

Mitsuhiro Mori

Masao Kawamura

Toshihiro Kawano

Shinichi Nakatsuka

Susumu Takahashi

Takuya Watabe

Yugo Takino

Misuzu Yoshizawa

Toshiaki Tanaka

Toshiyuki Usagawa

Masaaki Aoki

Masahiko Ogirima

Masahiko Kawata

Shin'ichi Nakatsuka

Yasunari Umemoto

Kiichi Ueyanagi

Tadashi Fukuzawa

Shinji Tsuji

Yasuhiro Shiraki

Tsukuru Ohtoshi

Sachio Ishioka

Michiharu Nakamura

Kunio Aiki

Norikazu Hashimoto

Shigeo Yamashita

Sumito Sato

Makoto Haneda

Hirobumi Ouchi

Yasutoshi Kashiwada

Yoichi Nakata

Satoshi Suwa

Masahiro Ichiki

Takeo Takahashi

Takashi Toyonaka

Toshimitu Shinoda

Hajime Kusumoto

Kozi Honma

Yoshiteru Keikoin

Mitshiuro Mori

Ginro Takemura

Youichi Yasuda

Makoto Sakamoto

Akemi Yamanaka

Shinichi Nakatuka

A system and a method allow for the provision of an incentive between different applications. A server stores information including, in association, a user identifier, a first identifier, and a second identifier received from a client terminal, and when receiving an incentive request, causes an application server to provide an incentive to the user pertaining to the first identifier corresponding to the second identifier based on the information.

Method for providing incentive, server, and non-transitory computer-readable recording medium

To provide a drying method for terephthalic acid and a horizontal rotary dryer allowing easy performance of mass processing of the terephthalic acid and enabling size reduction by improving drying performance of the dryer. In a method of drying terephthalic acid by using a horizontal rotary dryer, a rotating shell is rotated to make a critical speed ratio &#x3b1; defined by expression 1 and expression 2 become 17 to less than 80% to dry the processing material,=2.21&#xbd;&#x2003;&#x2003;Expression 1&#x3b1;=&#xb7;100&#x2003;&#x2003;Expression 2

Drying method for terephthalic acid and horizontal rotary dryer

Hydrogen peroxide or a hydrogen peroxide producing agent is added to a water system having copper or copper alloy such as a thermal storage water system or a closed water system whereby the concentration of hydrogen peroxide in the circulating water becomes 1 to 200 mgH.sub.2 O.sub.2 /L. Hydrogen peroxide produces oxygen and oxygen works microbes directly so as to remove the microbial fouling and thus prevent the pitting corrosion in copper or its alloy due to microbial contamination.

Method of preventing pitting corrosion

In a polarization dependency type optical isolator comprising wedgelike polarizing prisms 3 and 5 and a Faraday rotator 4, the mode field diameters of an input side fiber 1 and an output side fiber 7 are the same as that of a transmission fiber and an erbium-doped fiber to be connected to them. The shape and other features of each lens are controlled so that the spot size of a parallel ray which is converted from an incident ray by an input side lens 2 is equal to the spot size of a parallel ray which is converted by an output side lens 6 when a reference beam is irradiated from the fiber 7. In a rare-earth-doped fiber optical amplifier using an optical isolator which is configured in a manner similar to this, the connecting portion of the fiber and the optical isolator can be spliced by fusion without increasing the insertion loss of the optical isolator in the forward direction and the connection loss due to a difference in the mode field diameter is reduced. Therefore, the noise figure decreases and the gain increases.

Optical isolator, optical circuit, and rare-earth-doped fiber optical

A semiconductor laser having a stripe-like lasing region, wherein the structure of the lasing region such as the mechanism of optical guiding of the lateral mode control structure is made different between the central portion in the lasing region and portions close to facets, in order to reduce optical feedback induced noise and astigmatism, and to facilitate the manufacture thereof.

Semiconductor laser

A high-power low-noise semiconductor laser device required for light sources for an erasable optical disc is a self-sustained pulsating semiconductor laser device in which an MQW structure is used for an active layer, and thus a kink output power and a light output power by which the self-pulsation is enabled are increased to 10 mW or more and noise is reduced. Another semiconductor laser device of a self-pulsation type has impurities that are doped in the active layer to reduce the self-pulsating frequency to obtain a low-noise characteristic even if higher optical feedback occurs. 259

Semiconductor laser device

A stripe groove is formed on a semiconductor substrate and buried by lamination of multiple semiconductor layers, and a channel being lower than the substrate surface is formed outside the groove near at least one mirror edge, such that a laser diode with decreased astigmatism can be produced.

Laser diode

A phased array semiconductor laser has two or more luminous stripes. The number, width or center to center spacing of stripes is made different between the center region and neighborhood of facets of the laser so that the laser may oscillate stably in the fundamental supermode with an optical output of 100 mW or more.

A semiconductor device and method of manufacturing the same. The device comprises a first n-type semiconductor layer and a second undoped semiconductor layer between which a hetero-junction is formed, and a third p-type embedded semiconductor layer, a gate metal formed without the exposure to air immediately after the third, second and first semiconductor layer are successively formed, and an external electrode connected with the third p-type embedded semiconductor layer, capable of controlling the carriers in the neighborhood of the hetero-junction. This semiconductor device greatly improves the controllability of the threshold voltage thereof, and provides the gate electrodes of good quality.

Semiconductor device and manufacturing method of the same

Disclosed is a semiconductor laser wherein an interface layer is provided on an upper cladding layer formed on an active layer, the interface layer having a smaller Al mole ratio than that of the upper cladding layer, thereby preventing oxidation of the semiconductor surface which is exposed to the atmosphere, and thus improving the crystallizability of a semiconductor layer which is to be formed subsequently. By setting the refractive index of this semiconductor layer so as to be smaller than that of the upper cladding layer, light can be confined in the active layer at increased efficiency.

Semiconductor laser device having high optical intensity and reliability

The present invention relates to phased-array semiconductor lasers having a radiation angle turnable by oscillating independently and stably between the fundamental supermode and the higher order supermode and switching the radiation angles by utilizing the property that their radiation angles are different. Optical switching and optical scanning, that have been difficult in the prior art, can be made more easily by use of a semiconductor laser having a turnable radiation angle. The objection of the present invention can be accomplished by disposing separate electrodes at the emission stripes and at the gap between the stripes in the phased-array semiconductor laser. Further, the present invention may be accomplished by dividing at least one stripe electrode in order to form electrode regions. When the current is applied to all the electrodes, oscillation occurs in the highest order mode and the beam is emitted in another direction. When the current is applied to only the electrode exclusive of the electrode regions, oscillation occurs in the fundamental mode and the beam is emitted in a direction vertical to a facet. Moreover, the present invention may be accomplished by disposing electrodes outside the stripe regions of the phased-array semiconductor laser so that oscillation occurs in the fundamental supermode when the electric field is applied to the electrodes and in the higher order mode when the electric field is not applied.

A p-GaAlAs cladding layer is exposed to the air if a groove of the form of a stripe is formed by chemical etching in an n-GaAs layer that serves as a current confinement layer on the p-GaAlAs cladding layer, the groove being so formed as to reach the cladding layer. The GaAlAs is oxidized so easily that an unstable degradation layer is formed on the surface thereof. To solve this problem according to the prior art, an undoped GaAs layer that serves as a cover layer is formed on the p-GaAlAs cladding layer, the n-GaAs layer is formed, and the etching is effected so that the undoped GaAs layer is simply exposed. The undoped GaAs layer is then heated in the MBE apparatus while being irradiated with the As molecular beam and is thermally etched. Therefore, the cladding layer is exposed in vacuum and the p-GaAlAs layer is formed thereon. However, this method is not suited for mass-production since the thermal etching is unstable and it needs the MBE apparatus of a very high degree of vacuum. Quality of the crystal decreases, too, due to the heating. This invention therefore provides a fabrication process of semiconductor lasers in which the cover layer disappears due to interdiffusion of constituent elements that stem from the diffusion of impurities such as zinc ions in the undoped GaAs layer.

Fabrication process of semiconductor lasers

A semiconductor laser device having a stripe-shaped active region defined between a pair of end surfaces, at least one of the end surfaces having a curved cross-section in a plane parallel to the active region with a radius of curvature from 10 to 300 .mu.m, the stripe of the active region having such a width that a single transverse mode and a multi-longitudinal mode are allowed. The laser beam emitted from this laser can have little astigmatism and small spot size.

Semiconductor laser device having little astigmatism

Growing community of inventors

Tokyo, Japan

Yuichi Ono