Hitachi Metals, Ltd.

Hitachi Cable, Inc.

Yuichi Oda

Hiromitsu Kuroda

Kazuma Kuroki

Shohei Hata

Osamu Ikeda

Hideyuki Sagawa

Masahide Okamoto

Kotaro Tanaka

Takuto Yamaguchi

Hiroaki Numata

A solder joint material includes a Zn-based metal material including mainly of Zn, an Al-based metal material including mainly of Al and provided on the Zn-based metal material, a Cu-based metal material including mainly of Cu and provided on the Al-based metal material, and a surface-treated layer provided on the Cu-based metal material and including an amorphous layer including oxygen and a metal with a higher oxygen affinity than a copper.

Solder joint material and method of manufacturing the same

The disclosed junction material, manufacturing method thereof, and manufacturing method of junction structure utilize lead-free materials and ensure a high reliability of the junction between a semiconductor element and a frame or substrate, or, between a metal plate and another metal plate. For junctions between a semiconductor element and a frame or substrate, by using as the JUNCTION MATERIAL a laminate material comprising a Zn-based metallic layer (), Al-based metallic layers () on both sides thereof, and X-based metallic layers () (X=Cu, Au, Ag or Sn) on the outside of both the Al-based metallic layers (), even in an oxygen-rich environment, the superficial X-based metallic layers protect the Zn and Al from oxidation until said junction material melts, preserving the wettability and bondability of said junction material as solder and securing the high reliability of the junction.

Junction material, manufacturing method thereof, and manufacturing method of junction structure

To provide an inexpensive lead component which can be easily connected to a semiconductor chip and which has satisfactory connectability. There is provided a lead component including a base material having a connection part for connecting to a semiconductor chip, comprising: a solder part having a Zn layer made of a Zn-bonding material rolled and clad-bonded on the base material, and an Al layer made of an Al-bonding material rolled and clad-bonded on the Zn layer, in a prescribed region including the connection part on the base material; and the solder part further comprising a metal thin film composed of one kind or two kinds or more of Au, Ag, Cu, Ni, Pd, and Pt covering a surface of the Al layer.

Lead component and method for manufacturing the same, and semiconductor package

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Hitachi, Japan

Yuichi Oda