Sumco Techxiv Corporation

Sumco Techxiv Kabushiki Kaisha

Yuichi Nasu

Kazuhiro Narahara

Hideyuki Matsunaga

Hirotaka Katou

A method and an apparatus for manufacturing a semiconductor wafer are provided for improving a quality of the semiconductor wafer, and further, for improving a quality of a semiconductor device manufactured by using the semiconductor wafer, by preventing warping from being generated at a stage of a placing step, at the time of performing heat treatment to a semiconductor wafer substrate. The placing process is performed by a placing means so that a time when a temperature difference between a wafer front surface temperature and a wafer rear surface temperature becomes maximum, and a time when warping is generated in the wafer are prior to a time when the wafer is brought into contact with lift pins or a susceptor (i.e., a time after the temperature is at an upper limit value of an infrared temperature region at 600&#xb0; C.), and the lift pins are brought into contact with the wafer rear surface.

Method and apparatus for manufacturing semiconductor wafer

An oxide filmon the surface of the substrateand an inner wall oxide filmin a COPexposed to the surface of the substrateare removed by cleaning the surface of the substratewith a hydrofluoric acid solution. The substrateis then cleaned with ozone water, thereby forming an oxide filmon the surface of the substrate. Thereafter the substrateis subjected to a heat treatment for removing the oxide filmon the surface of the substrate. Consequently, the COPon the surface of the substrateis planarized to be eliminated from the substrate surface. Thereafter an epitaxial layeris formed on the surface of the substrate

Growing community of inventors

Kanagawa, Japan

Yuichi Nasu