Kabushiki Kaisha Toshiba

Yuichi Motoi

Katsuyuki Naito

Takahiro Hirai

Hiroshi Watanabe

Koji Asakawa

Hideyuki Sugiyama

Yoshihiko Nakano

Shiho Nakamura

Koichi Kubo

Atsuhiro Kinoshita

Hirofumi Morise

Seiichi Suenaga

Hiroshi Nomura

Mizuki Ono

Chika Tanaka

Takashi Yamauchi

Shigeru Haneda

Junji Koga

A nonvolatile storage device includes a plurality of bit linesarranged in a column direction on a substrate; a plurality of word linesarranged in a row direction on the substrate; a memory cell arrayhaving a plurality of memory cells, where a store state of each of the memory cellschanges according to an electric signal relatively applied to the word lineand the bit line; a word line selection unit having a needlerelatively movable with respect to the substrate which comes into contact with one word line, setting the word linein contact with the needleto a selection state; and a sense amplifierdetecting through the bit line an electrical signal exhibiting the store state of the memory cellto be connected to the word line.

Nonvolatile storage device and method of manufacturing the same, and storage device and method of manufacturing the same

A semiconductor device includes a first wiring line group made of a metal, wiring lines of the first wiring line group being arranged in parallel with each other, a second wiring line group which is made of a semiconductor and crosses the first wiring line group, wiring lines of the second wiring line group being arranged in parallel with each other and being movable in the vicinity of each intersection with the wiring lines of the first wiring line group, and a plurality of metal regions which are formed to be joined with the wiring lines constituting the second wiring line group, and have a work function different from that of the metal forming the first wiring line group.

Semiconductor device including a plurality of wiring lines

A magnetic switching element according to an example of the present invention includes a magnetic element, first and second electrodes which put the magnetic element therebetween, a current control section which is connected to the first and second electrodes, the current control section controlling a magnetization direction of a magnetization free section in such a manner that a current is made to flow between the magnetization free section and the magnetization fixed section, a movable conductive tube having a fixed end and a free end, and a third electrode connected to the fixed end of the conductive tube. A switching operation is performed in such a manner that a spatial position of the conductive tube is caused to change depending on the magnetization direction of the magnetization free section.

Magnetic switching element and signal processing device using the same

A polarizing element is disclosed which includes a smooth glass substrate and a polarization layer formed thereon, the polarization layer having polarization characteristics for the incident light. The polarization layer is made of a carbon-based substance including carbon atoms. The carbon atoms are continuously connected via carbon-carbon double bonds having [pi] electron clouds. The [pi] electron clouds have average continuous distance of 100 nm or more in a longitudinal direction and have an average continuous distance less than 50 nm in a transverse direction. The carbon-based substance is formed in such a way that a plurality of the [pi] electron clouds have longitudinal directions which are in parallel along the glass-substrate surface.

Polarizing element, method of manufacturing polarizing element, method of evaluating exposure apparatus, method of manufacturing semiconductor device, and exposure apparatus

A switch element includes a substrate; a plurality of carbon nanotubes provided upright on the substrate; magnetic particles arranged at tip ends of the carbon nanotubes respectively; and a plurality of conductive layers formed between base ends of the carbon nanotubes and the substrate. A switching operation of the switching element is performed in such a manner that the carbon nanotubes or the magnetic particles are brought into contact with each other according to an electrical potential between the conductive layers, and the carbon nanotubes are separated from each other when an electrical current flows through the carbon nanotubes with the carbon nanotubes or the magnetic particles brought into contact with each other.

Switch element, memory element and magnetoresistive effect element

An data recording device according to an aspect of the present invention includes a memory cell array in a memory chip, a refresh circuit which executes a refreshing of the memory cell array, a refresh control circuit which executes refreshing at a time interval which is shorter than a data hold time and manages a data hold time, and an internal power source which supplies a power source electric potential to the refresh circuit and the refresh control circuit in a state in which the data recording device is removed from an external device.

Data recording device

Growing community of inventors

Kawasaki, Japan

Yuichi Motoi