Sanyo Electric Co., Ltd.

Semiconductor Components Industries, LLC

Sanyo Semiconductor Co., Ltd.

Yuichi Morita

Takashi Noma

Shinzo Ishibe

Hiroshi Yamada

Hiroyuki Shinogi

Kazuo Okada

Katsuhiko Kitagawa

Noboru Okubo

Shigeki Otsuka

Hiroshi Kanamori

Yukihiro Takao

Mitsuru Okigawa

Hisao Otsuka

Akira Suzuki

Yoshinori Seki

An object of the invention is to provide a smaller semiconductor device of which the manufacturing process is simplified and the manufacturing cost is reduced and a method of manufacturing the same. Furthermore, an object of the invention is to provide a semiconductor device having a cavity. A first supporting bodyhaving a penetration holepenetrating it from the front surface to the back surface is attached to a front surface of a semiconductor substratewith an adhesive layerbeing interposed therebetween. A device elementand wiring layersare formed on the front surface of the semiconductor substrate. A second supporting bodyis attached to the first supporting bodywith an adhesive layerbeing interposed therebetween so as to cover the penetration hole. The device elementis sealed in a cavitysurrounded by the semiconductor substrate, the first supporting bodyand the second supporting body

Semiconductor device and method of manufacturing the same

A packaged semiconductor device is manufactured by a simplified manufacturing process, and is reduced in cost, in thickness and in size. A device component and a pad electrode connected with the device component are formed on a semiconductor substrate. A supporter is bonded to a top surface of the semiconductor substrate through an adhesive layer. Then, there is formed a protection layer that has an opening at a location corresponding to the pad electrode and covers a side surface and a back surface of the semiconductor substrate. A conductive terminal is formed on the pad electrode at the location corresponding to the opening formed in the protection layer. No wiring layer or conductive terminal is formed on the back surface of the semiconductor substrate. A conductive terminal is formed on a periphery of the supporter outside of and next to the side surface of the semiconductor substrate.

Semiconductor device and manufacturing method thereof

This invention is directed to offer a package type semiconductor device that can realize a smaller size device and its manufacturing method as well as a small stacked layer type semiconductor device and its manufacturing method. A device componentand a pad electrodeelectrically connected with the device componentare formed on a semiconductor substrate. A supporting memberis bonded to a surface of the semiconductor substratethrough an adhesive layer. There is formed a through-holein the supporting memberpenetrating from its top surface to a back surface. Electrical connection with another device is made possible through the through-hole. A depressed portionis formed in a partial region of the top surface of the supporting member. Therefore, all or a portion of another device or a component can be disposed utilizing a space in the depressed portion. When a stacked layer type semiconductor device is formed, stacking is made by fitting a portion of a semiconductor devicein an upper layer to an inside of the depressed portion

The invention is directed to prevent corrosion of a semiconductor device. In the semiconductor device manufacturing method of the invention, a semiconductor substrate is etched from its back surface in a position corresponding to a first wiring formed on the semiconductor substrate with a first insulation film therebetween, to form a first opening exposing the first insulation film. Next, the insulation film exposed in the first opening is etched to form a second opening exposing the first wiring, and then the semiconductor substrate is etched to increase a diameter of the first opening and form a first opening having the larger diameter. Then, a second insulation film is formed on the back surface of the semiconductor substrate including on the first wiring through the first and second openings, and then the second insulation film covering the first wiring is etched.

Semiconductor device and manufacturing method of the same

The invention provides a semiconductor device that solves a problem of reflection of a pattern of a wiring formed on a back surface of a semiconductor substrate on an output image. A reflection layer is formed between a light receiving element and a wiring layer, that reflects an infrared ray toward a light receiving element the without transmitting it to the wiring layer, the infrared ray entering from a light transparent substrate toward the wiring layer through a semiconductor substrate. The reflection layer is formed at least in a region under the light receiving element uniformly or only under the light receiving element. Alternatively, an anti-reflection layer having a function of absorbing the entering infrared ray to prevent transmission thereof may be formed instead of the reflection layer.

Semiconductor device

This invention is directed to offer a technology that makes it possible to form desired bump electrodes easily when the bump electrodes are to be formed at locations lowered by a step. There is formed an isolation layerto isolate each of bump electrode forming regions. The isolation layeris a resist layer, for example, and is formed by exposure and development processes, for example. Each of the bump electrode forming regionsis surrounded by the isolation layerand a protection layerthat covers a side surface of a semiconductor substrate. Then, a printing maskthat has openingsat locations corresponding to the bump electrode forming regionsis placed above the semiconductor substrate. Next, solderin paste form is applied to the printing mask. Then the solderis applied to a metal layerby moving a squeezeat a constant speed. Bump electrodesare obtained by heating, melting and re-crystallizing the solderafter removing the printing mask

This invention provides a semiconductor device that solves a problem that a pattern of a wiring formed on a back surface of a semiconductor substrate is reflected on an output image. A light receiving element (e.g. a CCD, an infrared ray sensor, a CMOS sensor, or an illumination sensor) is formed on a front surface of a semiconductor substrate, and a plurality of ball-shaped conductive terminals is disposed on a back surface of the semiconductor substrate. Each of the conductive terminals is electrically connected to a pad electrode on the front surface of the semiconductor substrate through a wiring layer. The wiring layer and the conductive terminal are formed on the back surface of the semiconductor substrate except in a region overlapping the light receiving element in a vertical direction, and are not disposed in a region overlapping the light receiving element.

The invention is directed to providing a package type semiconductor device with high reliability and smaller size and a method of manufacturing the same. A semiconductor substrate formed with a device element and a pad electrode on its front surface is prepared. The semiconductor substrate is then selectively etched from its back surface to form an opening. A second insulation film is then formed covering the side and back surfaces of the semiconductor substrate. First and second insulation films on the bottom of the opening are then selectively removed to expose a portion of the pad electrode. A wiring layer is then formed along the side surface of the semiconductor substrate, being electrically connected with the exposed pad electrode. An electrode connect layer is then formed covering the wiring layer. A protection layer is then formed covering the back surface of the semiconductor substrate and having an opening in a region for formation of a sidewall electrode. Then, the sidewall electrode is formed in a region exposed by the opening of the protection layer.

The invention provides a CSP type semiconductor device with high reliability. The semiconductor device includes a pad electrode formed on a semiconductor substrate, a first passivation film covering an end portion of the pad electrode and having a first opening on the pad electrode, a plating layer formed on the pad electrode in the first opening, a second passivation film covering an exposed portion of the pad electrode between an end portion of the first passivation film and the plating layer, covering an end portion of the plating layer, and having a second opening on the plating layer, and a conductive terminal formed on the plating layer in the second opening.

The invention prevents a pad electrode for external connection of a semiconductor device from being damaged. An electronic circuit, a first pad electrode connected to the electronic circuit, and a second pad electrode connected to the first pad electrode are formed on a semiconductor substrate. A first protection film is formed, covering the first pad electrode and having an opening on the second pad electrode only. A wiring layer is further formed, being connected to the back surface of the first pad electrode through a via hole penetrating the semiconductor substrate and extending from the via hole onto the back surface of the semiconductor substrate.

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Yokosuka, Japan

Yuichi Morita