Panasonic Corporation

Matsushita Electric Industrial Co., Ltd.

Matsushita Electronics Corporation

Panasonic Intellectual Property Management Co., Ltd.

Yuichi Miyoshi

Tohru Yamaoka

Hiroshi Ogura

Yusuke Takeuchi

Shin Hashimoto

Teruhito Ohnishi

Michikazu Matsumoto

Hiroyuki Aizawa

Tomoyasu Murakami

Toshihiko Nagai

Takashi Imanaka

Tomoyuki Sasaki

Katsuyuki Ikenouchi

Hidenori Notake

Atsuhiro Fujii

An acceleration sensor includes a detection device, an opposed electrode, and a top lid. The detection device includes an active layer, a base layer, an oxide layer disposed between the active layer and the base layer, a first insulating layer, a contact portion, and a self-check electrode. The first insulating layer is disposed on the active layer at a side opposite to the oxide layer and provided with a first opening. The contact portion is disposed on a part of the first insulating layer at a side opposite to the active layer and includes a first metal layer connected to the active layer through the first opening. The opposed electrode is disposed at a location opposing the self-check electrode, and the top lid supports the opposed electrode.

Acceleration sensor

An electret condenser includes a fixed filmincluding a conductive filmto be an upper electrode, a vibrating filmincluding a lower electrodeand a silicon oxide filmto be an electret film, and a silicon oxide filmprovided between the fixed filmand the vibrating filmand including an air gapRespective parts of the fixed filmand the vibrating filmexposed in the air gapare formed of silicon nitride filmsand

Electret condenser

A MEMS device, including: a substrate having a first principal plane and a second principal plane opposite to the first principal plane; a through hole formed in the substrate; and a vibrating film formed over the first principal plane so as to cover the through hole. The first principal plane and the second principal plane are both a (110) crystal face; and the through hole has a substantially rhombic shape on the second principal plane.

MEMS device and method for manufacturing the same

A diaphragm structure for a MEMS device includes a through-hole formed so as to penetrate from an upper surface to a bottom surface of a substrate; and a vibrating electrode film formed on the upper surface of the substrate so as to cover the through-hole. An opening shape of the through-hole in the upper surface of the substrate is substantially hexagonal.

Diaphragm structure and MEMS device

A MEMS device includes a first insulating film formed on a semiconductor substrate, a vibrating film formed on the first insulating film, and a fixed film above the vibrating film with an air gap being interposed therebetween. The semiconductor substrate has a region containing N-type majority carriers. A concentration of N-type majority carriers in a portion of the semiconductor substrate where the semiconductor substrate contacts the first insulating film, is higher than a concentration of N-type majority carriers in the other portion of the semiconductor substrate.

MEMS device, MEMS device module and acoustic transducer

An electric condenser includes a fixed filmincluding a conductive filmto be an upper electrode, a vibrating filmincluding a lower electrodeand a silicon oxide filmto be an electric film, and a silicon oxide filmprovided between the fixed filmand the vibrating filmand including an air gap. Respective parts of the fixed filmand the vibrating filmexposed in the air gapare formed of silicon nitride filmsand

A silicon nitride film () and a silicon nitride film () are formed to cover a charged silicon oxide film () serving as an electret.

Electret covered with an insulated film and an electret condenser having the electret

After forming a processed film onto the underlying film formed on the substrate, the processed film is dry etched using a mask pattern so as to form an etched pattern. After the reaction product deposited on a wall of the etched pattern is removed by using the first cleaning solution having relatively low power to etch the processed film and the second cleaning solution having relatively high power to etch the processed film in that order, the etched pattern or its vicinity is rinsed with water.

Method of removing reaction product due to plasma ashing of a resist pattern

An ultrasonic transmitting unit transmits an ultrasonic wave to a slurry supply pipe. A polishing slurry is conveyed under pressure from a slurry supply tank to a slurry outlet via the slurry supply pipe and supplied from the slurry outlet to a surface of a polishing cloth. A wafer carrier holding a semiconductor wafer presses a surface of the semiconductor wafer against the surface of the polishing cloth coated with the polishing slurry and moves the semiconductor wafer relative to the polishing cloth to polish the surface of the semiconductor wafer. A discharged slurry flown out of the surface of the polishing cloth is discharged via a discharged slurry pipe. The application of the ultrasonic wave allows abrasive particles agglomerated in the polishing slurry in the slurry supply pipe to be re-dispersed into individual forms in the polishing slurry.

Method of polishing semiconductor wafer

A substrate holder for holding a substrate to be polished thereon and pressing the substrate against a polishing pad includes a substrate-holding head for holding the substrate thereon and pressing the substrate against the polishing pad. The substrate-holding head is disposed to be vertically movable toward/away from the polishing pad. A pressing member for pressing a peripheral region of the substrate, except for an outer edge region thereof, against the polishing pad is attached to the substrate-holding head.

Substrate holder, method for polishing substrate, and method for fabricating semiconductor device

A silicon substrate is cleaned using a liquid mixture primarily containing ammonia and hydrogen peroxide. A liquid containing ammonia is added to the liquid mixture to maintain the concentration of ammonia in the liquid mixture applied to the silicon substrate in the range between 2.5 wt. % and 3.5 wt. %. The liquid containing ammonia is added to the liquid mixture at a constant time interval. The constant time interval is set to be equal to a time period which is necessary for the concentration of ammonia in the liquid mixture to change from a first concentration level of no more than 3.5 wt. % to a second concentration level of no less than 2.5 wt. %, the second concentration level being lower than the first concentration level. The concentration of ammonia in the liquid containing ammonia and the amount thereof to be added to the liquid mixture are adjusted so as to increase the concentration of ammonia in the liquid mixture to the first concentration level by addition thereof.

Growing community of inventors

Osaka, Japan

Yuichi Miyoshi