Kabushiki Kaisha Kobe Seiko Sho

Yuichi Matsui

Koji Kobashi

Koichi Miyata

Kazuo Kumagai

Shigeaki Miyauchi

Akimitsu Nakaue

A semiconducting diamond electroluminescence element comprises an electrically conductive substrate, a semiconducting diamond layer formed on the substrate, an insulating diamond layer formed on the semiconducting diamond layer, a front electrode formed on the insulating diamond layer, and a back electrode formed on the conductive substrate in ohmic contact with the same. The color of light to be emitted by the semiconducting diamond electroluminescence element can readily be determined by changing the impurity content in the semiconducting diamond layer. The luminescence intensity of the semiconducting diamond electroluminescence element can readily be changed by changing the voltage applied across the front and back electrodes without entailing dielectric breakdown.

Semiconducting diamond light-emitting element

Disclosed herein is a MIS type diamond field-effect transistor comprising a diamond semiconductor layer provided as an active layer by chemical vapor deposition (CVD), and a diamond insulator layer provided on the diamond semiconductor layer also by CVD, a gate electrode being formed on the diamond insulator layer, wherein a diamond insulator undercoat is provided on a non-diamond substrate by CVD, and the diamond semiconductor layer and the diamond insulator layer are sequentially provided on the diamond insulator undercoat. The MIS type diamond field-effect transistor with this structure ensures that in the manufacture thereof, a diamond insulator undercoat of large area can be formed on a non-diamond substrate of CVD, whereby a large number of elemental devices can be fabricated simultaneously.

MIS type diamond field-effect transistor with a diamond insulator

A schottky diode manufacturing process employing diamond film comprises forming a B-doped p-type polycrystalline diamond film on a low-resistance p-type Si substrate by CVD using a source gas consisting of CH.sub.4, H.sub.2 and B.sub.2 H.sub.6, forming an ohmic contact on the back of the p-type Si substrate, and forming a metal electrode of Al, Pt Au, Ti or W on the B-doped p-type polycrystalline diamond film. The B/C concentration ratio of the source gas is greater than 0.01 ppm and less than 20 ppm.

Growing community of inventors

Kobe, Japan

Yuichi Matsui