Nippon Telegraph and Telephone Corporation

Ntt Electronics Corporation

Yuichi Kado

Mitsuru Shinagawa

Shinji Nakamura

Tadao Takeda

Toshiaki Tsuchiya

Ryusuke Kawano

Katsuyuki Ochiai

Terukazu Ohno

Sadao Nakashima

Tetsushi Sakai

Takuji Harada

Hideyuki Okamoto

Takemi Ueki

Ryoichi Matsumoto

A signal electrode (A) and a ground electrode (B) are disposed respectively on surfaces of a case (). In this way, the signal electrode (A) and the ground electrode (B) do not come into contact with any electric component, such as a transmission circuit (), disposed inside the case (), and thus a reduction in an electric field (Ec) induced in an electric-field transmission medium can be prevented. In addition, a certain distance between the signal electrode (A) and the ground electrode (B) is kept, and thus a reduction in the electric field (Ec) induced in the electric-field transmission medium can be prevented. Furthermore, the contactability between the signal electrode (A) and the electric-field transmission medium is improved, and thus the electric field (Ec) induced in the electric-field transmission medium can be increased.

Electric-field communication device

A method of manufacturing an SOI substrate uses an SOI substrate having a first single-crystal silicon layer, an insulating layer formed on the first single-crystal silicon layer, and a second single-crystal silicon layer formed on the insulating layer. The surface of the second single-crystal silicon layer is thermally oxidized. The second single-crystal silicon layer is controlled to have a predetermined thickness by removing the thermally oxidized surface. This step controlling the second single-crystal silicon layer to have a predetermined thickness includes the step of eliminating, by annealing, a stacking fault formed by the thermal oxidation.

Method of manufacturing SOI substrate

Growing community of inventors

Atsugi, Japan

Yuichi Kado