Sony Corporation

Yuichi Ishida

Masayuki Suzuki

Takaaki Ami

Naomi Nagasawa

Masakazu Yajima

Akio Machida

Kazuaki Yazawa

Kiminobu Ichimura

Taiki Sugiyama

Yoshio Muraoka

Yutaka Sugiyama

Kazuhiko Suzuki

Hiroki Naito

Mitsuo Hashimoto

Katsuyuki Hironaka

Teiichiro Nishimura

Takashi Oishi

Hiroyuki Ryoson

Keiko Furukawa

Norikazu Nakayama

Tadahiro Kono

Hidehiro Kawaguchi

Masayuki Yoshii

Sumito Shiina

Toshihiko Hirota

Provided is a camera shake correction device including a first yoke plate, a second yoke plate that is opposed to the first yoke plate, a slider located between the first yoke plate and the second yoke plate, and slidable while supporting an image sensor, a magnet supported by the first yoke plate and configured to form a magnet circuit between the magnet and the second yoke plate, a driving coil fixed to the slider and configured to generate a driving force that slides the slider, a non-magnetic sheet provided between the magnet and the slider, and a magnetic fluid provided between the magnet and the non-magnetic sheet.

Camera shake correction device

A composite material includes a base resin, a heat dissipation filler that is mixed into the base resin, hollow particles that are mixed into the base resin, hollow particles that are mixed into the base resin, and bubbles that are formed in the base resin.

Composite material, electronic apparatus, and method for manufacturing electronic apparatus

There is provided an electronic apparatus including: a heating section; a heat storage section; a detection section configured to detect a heat storage amount of the heat storage section; and a control section configured to control operation of the heating section, based on the heat storage amount detected by the detection section.

Electronic apparatus, method of controlling electronic apparatus, power reception device, electric device, and system

There is provided an electronic apparatus that comprises a housing, an imaging element disposed in the housing, a battery disposed in the housing, and a heat storage material filled in a space in the housing and thermally connected to at least one of the imaging element or the battery.

Electronic apparatus

There is provided an electronic apparatus that includes a housing. A control circuit is provided inside the housing, a battery is provided inside the housing, a heat storage material is provided between the control circuit and the battery inside the housing, and a gap is provided between the control circuit and the battery.

Electronics apparatus

According to an embodiment, there is provided a heat spreader including a condenser portion formed of a nanomaterial. The heat spreader further includes a first plate member, a second plate member, and a support portion. The first plate member includes a first surface, the first surface including a first area provided with the condenser portion. The second plate member includes a second surface and is arranged such that the second surface faces the first surface. The support portion protrudes from the first area of the first plate member to the second plate member, and has an end portion that is free from the nanomaterial and is in contact with the second surface of the second plate member.

Heat spreader, electronic apparatus, and heat spreader manufacturing method

According to an embodiment, there is provided a heat spreader including an evaporation portion, a first condenser portion, a working fluid, and a first flow path. The evaporation portion is arranged in a first position. The first condenser portion is arranged in a second position, the second position being arranged apart from and higher than the first position. The working fluid evaporates from a liquid phase to a gas phase in the evaporation portion, and condenses from the gas phase to the liquid phase in the first condenser portion. The first flow path is made of a nanomaterial, has hydrophobicity on a surface, and causes the working fluid condensed to the liquid phase in the first condenser portion to flow to the evaporation portion by a gravitational force.

Disclosed is a light-emitting device. The light-emitting device includes an EL layer and a heat dissipation layer. The EL layer includes a first semiconductor layer, a second semiconductor layer, and an active layer, the first semiconductor layer having a first conductivity type that is one of n type and p type, the second semiconductor layer having a second conductivity type that is opposite to the first conductivity type, the active layer being provided between the first semiconductor layer and the second semiconductor layer. The heat dissipation layer has the first conductivity type and is bonded to a side of the EL layer closer to the second semiconductor layer than the first semiconductor layer.

Light-emitting device, electronic apparatus, and light-emitting device manufacturing method

A plasma display panel is provided. The plasma display panel includes a front panel including a front glass substrate, a plurality of pairs of discharge-maintaining electrodes disposed over the front glass substrate, and a first dielectric layer disposed in covering relation to the pairs of discharge-maintaining electrodes, and a rear panel disposed in confronting relation to the front panel with discharge spaces interposed therebetween, the front panel including a second dielectric layer disposed between the front glass substrate and the pairs of discharge-maintaining electrodes, the second dielectric layer including a cluster of fine particles of silica.

Plasma display panel

Crystalline superfine particles capable of emitting light depending upon a time-rate-of-change of a stress and controlled in grain size in the range from 5 nm to 100 nm are complexed with another material such as resin. The crystalline superfine particles are manufactured by using aggregates of molecules, i.e. inverted micelles, which orient hydrophilic groups of surfactant molecules inward and hydrophobic groups outward in a nonpolar solvent and which contain metal ions of a metal for forming the crystalline superfine particles dissolved in water inside the inverted micelles. Alternatively, they are manufactured by using inverted micelles enveloping precursor superfine particles, in which precursor superfine particles are enveloped in water inside the inverted micelles. The crystalline superfine particles are excellent in dispersibility in another material to be complexed, enhanced in emission efficiency and usable to make a transparent stress emission material. The complex material obtained is used to manufacture artificial light-emitting hair structures, artificial light-emitting skin, artificial light-emitting bodies, artificial light-emitting fabrics, and others.

Crystalline superfine particles, complex material, method of manufacturing crystalline superfine particles, inverted micelles, inverted micelles enveloping precursor superfine particles, inverted micelles enveloping crystalline superfine particles, and precursor superfine particles

An epitaxial rare earth oxide (001)/silicon (001) structure is realized by epitaxially growing a rare earth oxide such as cerium dioxide in the (001) orientation on a (001)-oriented silicon substrate. For this purpose, the surface of the (001)-oriented Si substrate is processed into a dimer structure by 2&#xd7;1, 1&#xd7;2 surface reconstruction, and a rare earth oxide of a cubic system or a tetragonal system, such as CeOfilm, is epitaxially grown in the (001) orientation on the Si substrate by molecular beam epitaxy, for example. During this growth, a source material containing at least one kind of rare earth element is supplied after the supply of an oxidic gas is supplied onto the surface of the Si substrate. If necessary, annealing is conducted in vacuum after the growth.

Crystal growth method of oxide, cerium oxide, promethium oxide, multi-layered structure of oxides, manufacturing method of field effect transistor, manufacturing method of ferroelectric non-volatile memory and ferroelectric non-volatile memory

An epitaxial rare earth oxide (110)/silicon (001) structure is realized by epitaxially growing a rare earth oxide such as cerium dioxide in the (110) orientation on a (001)-oriented silicon substrate at a growth temperature lower than conventional ones. For this purpose, the surface of the (001)-oriented Si substrate is processed into a dimer structure by 2&times;1, 1&times;2 surface reconstruction, and a rare earth oxide of a cubic system or a tetragonal system, such as CeO film, is epitaxially grown in the (110) orientation on the Si substrate in an atmosphere containing an oxidic gas by using a source material made up of at least one kind of rare earth element. During this growth, a source material containing at least one kind of rare earth element is supplied after the supply of an oxidic gas is supplied onto the surface of the Si substrate.

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Kanagawa, Japan

Yuichi Ishida