Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Panasonic Intellectual Property Management Co., Ltd.

Panasonic Corporaton

Yuichi Inaba

Takumi Yamaguchi

Masahiro Kasano

Masato Ishino

Hiromitsu Fujiyama

Yosiaki Honda

Daisuke Ueda

Isao Kidoguchi

Nobuyuki Otsuka

Yoshifumi Watabe

Yasushi Matsui

Sadayuki Sumi

Kiyoshi Fujihara

Masahiro Kito

Masahiro Kitoh

Yoshihiro Sugishita

Takahiko Hirai

Junichi Hozumi

Tsuyoshi Kuroda

Takeshi Shimazaki

An animal individual identification member includes a first base brought into contact with a body of an animal, a second base including an identification portion indicating identification information of the animal by a sequence of mutually different adjacent colors, and an adhesive layer which is located between the first base and the second base and bonds the first base and the second base. The first base, the second base, and the adhesive layer have identical resin skeletons.

Animal individual identification member and animal data management system

An animal information management system includes an identification information obtaining unit which obtains identification information of an animal included in a first image, based on the first image captured by an imaging device during patrol imaging of a predetermined region in a first zoom setting in which only part of the predetermined region is an imaging target, the animal being included in animals present in the predetermined region; and a control unit which causes the imaging device to capture a second image including the animal in a second zoom setting having a zooming magnification lower than that of the first zoom setting when the identification information is obtained.

Animal information management system and animal information management method

An infrared detection element includes first and second pyroelectric elements which are arranged in a single pyroelectric substrate. First pyroelectric element includes a first surface electrode, a first back face electrode, and a first portion interposed between first surface and back face electrodes. First portion is provided as part of pyroelectric substrate. Second pyroelectric element includes a second surface electrode, a second back face electrode, and a second portion interposed between second surface and back face electrodes. Second portion is provided as part of pyroelectric substrate. Pyroelectric substrate is provided in part thereof surrounding first pyroelectric element with a slit shaped along an outer periphery of first pyroelectric element. Slit is formed out of regions in which a first surface wiring and a first back face wiring are disposed. Part of pyroelectric substrate surrounding second pyroelectric element is continuously formed over an entire circumference of second portion.

Infrared detection element, infrared detector, and infrared type gas sensor

The present invention provides a switching device capable of further minimizing the ON resistance of a switching element. Switching element has hole injecting unit that includes injecting electrode which is directly connected to semiconductor substrate. Injection driving unit of driving unit is connected to injecting electrode and source electrode of switching element, and applies an injection voltage Vin between injecting electrode and source electrode. Injection driving unit injects holes from hole injecting unit to a hetero-junction interface of semiconductor substrate, by applying the injection voltage Vin exceeding a threshold value to switching element. Because the injected holes pull the equivalent amount of electrons to the hetero-junction interface, concentration of the 2-dimensional electron gas as the channel region becomes high, and the ON resistance of switching elementbecomes small.

Switching device

The present invention provides a switching device capable of further minimizing the ON resistance of a switching element. Switching element has field application electrode that is connected to semiconductor substrate with insulating film interposed therebetween. Field control unit of driving unit is connected to field application electrode and source electrode of switching element, and applies a bias voltage Ve between field application electrode and source electrode. Field control unit applies an electric field from field application electrode to a hetero-junction interface of semiconductor substrate, by applying the bias voltage Ve exceeding a threshold value to switching element. In short, in the ON state of switching element, the electric field that is applied from field application electrode to semiconductor substrate works to increase electron concentration in a channel region by a field effect and decrease the ON resistance of switching element.

An optical interference filter whose major component is a film member. The film member includes a plurality of window regions arranged discretely in a surface direction selectively transmit, using an effect of optical interference, light having a waveband that substantially belongs to a visible spectrum, the plurality of window regions being arranged discretely in the surface direction, and one or more boundary regions selectively transmit, using the effect of the optical interference, light having a waveband that substantially belongs to an invisible spectrum excluding the visible spectrum, the one or more the boundary regions being located between adjacent window regions.

Optical interference filter that performs excellent color separation, and liquid crystal display, electroluminescence display and projection display apparatus having the optical interference filter

Photoelectric converters are arranged two-dimensionally in a semiconductor substrate. A planarizing layer, a light shielding film, a further planarizing layer and condenser lenses are formed sequentially on the semiconductor substrate and the photoelectric converters. The light shielding film has apertures at positions corresponding to the photoelectric conversion devices. Multilayer interference filters that transmit either a red, green or blue wavelength component of light are disposed in the apertures.

Solid-state imaging device and manufacturing method for the same

A solid-state imaging device is composed of a P-type semiconductor layer, an interlayer insulation film, a multilayer interference filter and condenser lenses which have been successively laminated on an N-type semiconductor layer. A photodiode, in which N-type impurities have been ion-implanted, is formed per pixel in the P-type semiconductor layer on the interlayer insulation film side. The multilayer interference filter has a composition including &#x3bb;/4 multilayer films and a plurality of spacer layers sandwiched therebetween. The &#x3bb;/4 multilayer films are composed of alternately laminated monotitanium dioxide layers and monosilicon dioxide layers that have the same optical thickness. The spacer layers have optical thicknesses corresponding to colors of light they are to transmit. A spacer layer is not included in a green region. Instead, two monotitanium dioxide layers, each of which constitutes a &#x3bb;/4 multilayer film, are adjoined to make a monotitanium dioxide layer with an optical thickness of &#x3bb;/2.

Solid-state imaging device with high pixel count that includes color filter with high color reproducibility and camera that uses it

The semiconductor laser device according to the present invention includes: a semiconductor substrate; an active layer having a stripe structure formed on the semiconductor substrate; and a buried layer formed on the semiconductor substrate and in a vicinity of the active layer, the buried layer including Fe and Ti.

Semiconductor laser apparatus

According to one aspect of the present invention, there is provided a semiconductor laser device, including: a semiconductor substrate of a first conductivity type; an active layer having a stripe structure formed on the semiconductor substrate; a first buried layer of a second conductivity type formed on the semiconductor substrate and in a vicinity of the active layer; a second buried layer of the first conductivity type formed on the first buried layer and in the vicinity of the active layer; and a third buried layer of the second conductivity type formed on the second buried layer and in the vicinity of the active layer. In this semiconductor laser device, a difference between a refractive index of the first buried layer and a refractive index of the second buried layer is about 0.02 or less, and a difference between the refractive index of the second buried layer and a refractive index of the third buried layer is about 0.02 or less.

Semiconductor laser and process for producing the same

A semiconductor light emitting element includes a p-type electrode which in turn includes a contact electrode layer including at least a Pt layer. Particularly, the semiconductor light emitting element further includes a layered structure including at least an n-type cladding layer, an active layer, and a p-type cladding layer; and a p-type contact layer formed above the layered structure, and the contact electrode layer is formed on the p-type contact layer.

Growing community of inventors

Osaka, Japan

Yuichi Inaba